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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L7E D • 7 ^ 4 1 4 2 DDlSb30 77D ■ SM6K KM41C4002B CMOS DRAM 4M x 1Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM 41C4002B is a C M O S high speed 4,194,304 x 1 Dynamic Random A cce ss Memory. Its de­


    OCR Scan     		DDlSb30 KM41C4002B 41C4002B 41C4002B-6 110ns 41C4002B-7 130ns 41C4002B-8 150ns R55-only PDF

    3JA1

    Abstract: No abstract text available
    Text: KM41C4002B CMOS DRAM 4M x 1Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4002B is a CMOS high speed 4,194,304 x 1 Dynamic Random Access Memory, Its de­ sign is op tim ized fo r high pe rform ance ap p lica tio n s


    OCR Scan     		KM41C4002B KM41C4002B-6 KM41C4002B-7 KM41C4002B-8 110ns 130ns 150ns KM41C4002B 3JA1 PDF

    KM44C1000BJ

    Abstract: 4Mx1 4Mx1 nibble
    Text: FUNCTION G U IDE M E M O R Y IC s Dynamic R A M Continued Capacity 4 M bit Part Number Organization Speed(ns) Technology Features Packages Remark KM41C4000BTR 4 Mx1 60/70/80 CMOS Fast Page 20 Pin TSOP-ll(Reverse) Now KM41C4000BLP KM41C4000BU KM41C4000BLZ


    OCR Scan     		KM41C4000BTR KM41C4000BLP KM41C4000BU KM41C4000BLZ KM41C4000BLV KM41C4000BLVR KM41C4000BLT KM41C4000BLTR KM41C4000BSLP KM41C4000BSU KM44C1000BJ 4Mx1 4Mx1 nibble PDF