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    Samsung Semiconductor KM44S32030BT-GH

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    Samsung Semiconductor KM44S32030T-GH

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    KM44S32030 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM44S32030 Samsung Electronics 8M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    KM44S32030AT-G/F8 Samsung Electronics 8M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    KM44S32030AT-G/FA Samsung Electronics 8M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    KM44S32030B Samsung Electronics 128Mbit SDRAM 8M x 4-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM44S32030BT-G/F10 Samsung Electronics 128Mbit SDRAM 8M x 4-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM44S32030BT-G_F10 Samsung Electronics 128Mbit SDRAM 8M x 4-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM44S32030BT-GF10 Samsung Electronics 8M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    KM44S32030BT-G/F8 Samsung Electronics 128Mbit SDRAM 8M x 4-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM44S32030BT-G_F8 Samsung Electronics 128Mbit SDRAM 8M x 4-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM44S32030BT-G/FA Samsung Electronics 128Mbit SDRAM 8M x 4-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM44S32030BT-G/FH Samsung Electronics 128Mbit SDRAM 8M x 4-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM44S32030BT-G/FL Samsung Electronics 128Mbit SDRAM 8M x 4-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM44S32030T-G/F10 Samsung Electronics 8M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    KM44S32030T-G_F10 Samsung Electronics 8M x 4-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz. Original PDF
    KM44S32030T-G/F8 Samsung Electronics 8M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    KM44S32030T-G_F8 Samsung Electronics 8M x 4-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz. Original PDF
    KM44S32030T-G/FH Samsung Electronics 8M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    KM44S32030T-G_FH Samsung Electronics 8M x 4-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz. Original PDF
    KM44S32030T-G/FL Samsung Electronics 8M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    KM44S32030T-G_FL Samsung Electronics 8M x 4-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz. Original PDF

    KM44S32030 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KM44S32030A CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 May. 1999 KM44S32030A CMOS SDRAM Revision History Revision 0.0 May 15, 1999


    Original     		PDF KM44S32030A 128Mbit 10/AP

    KM44S32030B

    Abstract: No abstract text available
    Text: KM44S32030B CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM44S32030B CMOS SDRAM Revision History Revision 0.0 May 15, 1999


    Original     		PDF KM44S32030B 128Mbit A10/AP KM44S32030B

    Untitled

    Abstract: No abstract text available
    Text: shrink-TSOP KM44S32030AN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 April 1999 Samsung Electronics reserves the right to change products or specification without notice. REV. 0.1 Apr. 1999 shrink-TSOP


    Original     		PDF KM44S32030AN 128Mb KM44S32030AT, 54-sTSOP

    54PIN

    Abstract: KM44S32030
    Text: Preliminary CMOS SDRAM KM44S32030 8M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S32030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF KM44S32030 KM44S32030 A10/AP 54PIN

    KM44S32030

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM44S32030 8M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S32030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF KM44S32030 KM44S32030 A10/AP

    741 op amp

    Abstract: No abstract text available
    Text: KM44S32030A CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM44S32030A CMOS SDRAM Revision History Revision 0.0 May 15, 1999


    Original     		PDF KM44S32030A 128Mbit A10/AP 741 op amp

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260

    KMM390S3320BT1-GA

    Abstract: 16MX8 32MX72 KMM390S1723BT1-GA samsung memory
    Text: SERIAL PRESENCE DETECT PC133 Registered DIMM PC133 Registered SDRAM DIMM 168pin Type SPD Specification REV. 0 Aug. 1999 REV. 0 Aug. 1999 SERIAL PRESENCE DETECT PC133 Registered DIMM KMM390S1723BT1-GA •Organization : 16MX72 •Composition : 16MX8 * 9ea •Used component part # : KM48S16030BT-GA


    Original     		PDF PC133 168pin) KMM390S1723BT1-GA 16MX72 16MX8 KM48S16030BT-GA 4K/64ms 128bytes KMM390S3320BT1-GA 16MX8 32MX72 KMM390S1723BT1-GA samsung memory

    PC133 registered reference design

    Abstract: KMM390S3320T1-GA KMM390S3320T1
    Text: KMM390S3320T1 PC133 Registered DIMM Revision History Revision 0.0 May. 1999 • PC133 first published Revision 0.1 (June. 1999) - Redefined feedback capacitor value to Cb, variable value, which depends upon the PLL chosen at Functional Block Diagram - Defined " This module is based on JEDEC PC133 Specification" at Package Dimensions


    Original     		PDF KMM390S3320T1 PC133 KMM390S3320T1 32Mx72 32Mx4, PC133 registered reference design KMM390S3320T1-GA

    PC133 registered reference design

    Abstract: KMM390S3320AT1
    Text: KMM390S3320AT1 PC133 Registered DIMM Revision History Revision 0.0 May. 1999 • PC133 first published Revision 0.1 (June. 1999) - Redefined feedback capacitor value to Cb, variable value, which depends upon the PLL chosen at Functional Block Diagram - Defined " This module is based on JEDEC PC133 Specification" at Package Dimensions


    Original     		PDF KMM390S3320AT1 PC133 KMM390S3320AT1 32Mx72 32Mx4, PC133 registered reference design

    KMM390S3320BT1-GA

    Abstract: PC133 registered reference design
    Text: KMM390S3320BT1 PC133 Registered DIMM Revision History Revision 0.0 Aug. 1999 • PC133 first published REV. 0.0 Aug. 1999 PC133 Registered DIMM KMM390S3320BT1 KMM390S3320BT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM390S3320BT1 PC133 KMM390S3320BT1 32Mx72 32Mx4, KMM390S3320BT1-GA PC133 registered reference design

    Untitled

    Abstract: No abstract text available
    Text: KMM377S3320T3 PC100 Registered DIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail C" in PCB Dimension. Rev. 0.1 May. 1999 KMM377S3320T3 PC100 Registered DIMM KMM377S3320T3 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref., 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM377S3320T3 PC100 KMM377S3320T3 32Mx72 32Mx4, 32Mx4

    PC133 registered reference design

    Abstract: No abstract text available
    Text: Shrink-TSOP KMM390S6520BN Preliminary PC133 Registered DIMM Revision History Revision 0.0 July 29. 1999, Preliminary - First generation of datasheet. REV. 0.0 July. 1999 Shrink-TSOP KMM390S6520BN Preliminary PC133 Registered DIMM KMM390S6520BN SDRAM DIMM


    Original     		PDF KMM390S6520BN PC133 KMM390S6520BN 64Mx72 32Mx4, 32Mx4 PC133 registered reference design

    KM48S8030BT-GL

    Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PDF PC100 KM48S8030BT-GL nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832

    KMM390S3320T-GA

    Abstract: support samsung pc133 sdram PC133 registered reference design
    Text: KMM390S3320T Preliminary PC133 SDRAM MODULE Revision History Revision 0 Jan. 1999 • PC133 first published REV. 0 Jan. 1999 Preliminary PC133 SDRAM MODULE KMM390S3320T KMM390S3320T SDRAM DIMM (RCC 0.8 ver. Base) 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM390S3320T PC133 KMM390S3320T 32Mx72 32Mx4, KMM390S3320T-GA support samsung pc133 sdram PC133 registered reference design

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM44S32030 8M X 4Bit X 4 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM 44S32030 is 134,217,728 bits synchronous high data • JEDEC standard 3.3V pow er supply • LVTTL com patible with m ultiplexed address rate Dynam ic RAM organized as 4 x 8,388,608 w ords by 4 bits,


    OCR Scan     		PDF KM44S32030 44S32030 10/AP

    44s32

    Abstract: No abstract text available
    Text: Preliminary KM44S32030 CMOS SDRAM 8M X 4Bitx 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address The KM44S32Q30 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits,


    OCR Scan     		PDF KM44S32030 KM44S32Q30 10/AP 44s32

    Untitled

    Abstract: No abstract text available
    Text: KM44S32030B CMOS SDRAM 128Mbit SDRAM 8M X 4Bit X 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 ELECTRONICS KM44S32030B CMOS SDRAM R evision H istory


    OCR Scan     		PDF KM44S32030B 128Mbit

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM377S3320T1 SDRAM MODULE KMM377S3320T1 SDRAM DIMM Intel 1.0 ver. Base 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S3320T1 is a 32M bit x 72 Synchro­


    OCR Scan     		PDF KMM377S3320T1 KMM377S3320T1 32Mx72 32Mx4, 32Mx4 400mil 18bits 24-pin

    CDC2509

    Abstract: AE CX0 600
    Text: Preliminary KMM378S3320T SDRAM MODULE KMM378S3320T 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref. 3.3V Synch. DRAMs GENERAL DESCRIPTION FEATURE The Samsung KMM378S3320T is a 32M bit x 72 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM378S3320T 32Mx72 32Mx4, KMM378S3320T 400mH 24-pin 200-pin CDC2509 AE CX0 600

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE_ Preliminary KMM377S3320T1 Revision History R e v is io n 3 M ay 1 9 9 8 - CLK Input Cap. is added by PLL Input Cap. (27pF) REV. 3 May '98 ELECTRONICS Preliminary KMM377S3320T1 SDRAM MODULE KMM377S3320T1 SDRAM DIMM (Intel 1.0 ver. Base)


    OCR Scan     		PDF KMM377S3320T1 KMM377S3320T1 32Mx72 32Mx4, 32Mx4 400mil 18bits

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM377S3320T3 SDRAM MODULE KMM377S3320T3 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S3320T3 is a 32M bit x 72 Synchro­


    OCR Scan     		PDF KMM377S3320T3 KMM377S3320T3 32Mx72 32Mx4, 32Mx4 KMM377S3320T3-GH 100MHz KMM377S3320T3-GL

    CDC2509

    Abstract: No abstract text available
    Text: Preliminary SDRAM MODULE_ KMM378S3320T Revision History Revision 2 July 1998 "R EG E" description is changed. REV. 2 July 1998 ELECTRONICS Preliminary KMM378S3320T SDRAM MODULE KMM378S3320T 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref. 3.3V Synch. DRAMs


    OCR Scan     		PDF KMM378S3320T 32Mx72 32Mx4, KMM378S3320T KMM378S3320T-G8 400mil KMM378S3320T-GH CDC2509

    km48s2020ct

    Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
    Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT KM44S16020BT KM48S8020BT KM416S4020BT KM416S4021BT KM44S160308T KM48S8030BT S823B 4MX16 54-PIN u108h KM48S2020 44s16030