SRAM 64Kx16
Abstract: No abstract text available
Text: Preliminary KM616V1OOOBLI / Ll-L CMOS SRAM 64Kx16 Bit Low Voltage & Industrial Temp. Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85°C The KM616V1000BLI/LI-L is a 1,048,576-bit high • Fast Access Time : 70, 100 ns max.
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KM616V1OOOBLI
64Kx16
360nW
216mW
I/01-I/08
I/09-I/016
KM616V1000BLTI/LTI-L:
400mil
KM616V1000BLRI/LRI-L:
SRAM 64Kx16
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM616V1OOOBL / L-L 64Kx16 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 100 ns max. The KM616V1OOOBL/L-L is a 1,048,576-bit high speed • Low Power Dissipation Static Random Access Memory organized as 65,536
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KM616V1OOOBL
64Kx16
KM616V1OOOBL/L-L
576-bit
180nW
216mW
KM616V1
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM616V1OOOBLI / Ll-L 64Kx16 Bit Low Voltage & Industrial Temp. Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85°C • Fast Access Time : 70, 100 ns max. • Low Power Dissipation Standby(CMOS): 360|xW(max.)L-Version
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KM616V1OOOBLI
64Kx16
216mW
KM616V1000BLI/LI-L
576-bit
KM616
002140b
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Untitled
Abstract: No abstract text available
Text: KM616V1000B, KM616U1000B Family CMOS SRAM 64K x16 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCTOPTION • • • • The KM 616V1000B and KM616U1 OOOB fam ily is febricated by SAM SUNG'S advanced CM OS process technology. The fam ily
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KM616V1000B,
KM616U1000B
KM616V1OOOB
616U1000B
44-TSQ
P2-400F/R
616V1000B
KM616U1
KM61SV1000B
KM616U10008
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km616u1000b
Abstract: No abstract text available
Text: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM616V1000B and KM616U1000B family are • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16
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KM616V1000B,
KM616U1000B
64Kx16
64Kx16
KM616V1000B
44-TSOP
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Untitled
Abstract: No abstract text available
Text: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • Process Technology : 0.6 um CMOS Organization : 64Kx16 Data Byte Control : /LB=I/01~8, /UB=I/09~16 Power Supply Voltage
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KM616V1000B,
KM616U1000B
64Kx16
64Kx16
KM616V1000B
44-TSOP
7Tb4142
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100PF
Abstract: 0213T
Text: Preliminary CMOS SRAM K M 6 1 6 V 1 OOOBL / L-L 64Kx16 B it Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 100 ns max. The KM616V1000BL/L-L is a 1,048,576-bit high speed • Low Power Dissipation Static Random Access Memory organized as 65,536
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KM616V1OOOBL
64Kx16
180nW
54jiW
216mW
I/01-I/08
KM616V1000BLT/LT-L:
400mil
KM616V1000BLR/LR-L:
100PF
0213T
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KM616U1000B
Abstract: KM616V1000B KM616V1000
Text: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • Process Technology : 0.6 urn CMOS Organization : 64Kx16 Data Byte Control : /LB=I/01~8, /UB=I/09~16 Power Supply Voltage
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KM616V1000B,
KM616U1000B
64Kx16
64Kx16
KM616V1000B
44-TSOP
als-10
KM616V1000
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Untitled
Abstract: No abstract text available
Text: KM616V1000B, KM616U10Q0B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • The KM616V1000B and KM616U1000B family are fabricated by SAMSUNG’S advanced CMOS process technology. The family can support various operating
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KM616V1000B,
KM616U10Q0B
64Kx16
KM616V1000B
KM616U1000B
64Kx16
71b4ms
GG3b73G
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