KMM366S104CTL-G0
Abstract: No abstract text available
Text: KMM366S104CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) :±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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PDF
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KMM366S104CTL
200mV.
2K/32ms
4K/64ms.
KMM366S104CTL
1Mx64
1Mx16,
66MHz
KMM366S104CTL-G0
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KMM366S104CTL-G0
Abstract: No abstract text available
Text: KMM366S104CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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Original
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PDF
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KMM366S104CTL
200mV.
2K/32ms
4K/64ms.
KMM366S104CTL
1Mx64
1Mx16,
100Max
54Max)
KMM366S104CTL-G0
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KMM366S104CT-G8
Abstract: KMM366S104CT-GH KMM366S104CT-GL
Text: KMM366S104CT Preliminary PC100 SDRAM MODULE Revision History Revision .2 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. I IL(Inputs) : ± 5uA to ± 1uA, I IL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T A = 23°C, f = 1MHz, V REF =1.4V ± 200 mV.
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Original
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PDF
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KMM366S104CT
PC100
2K/32ms
4K/64ms.
KMM366S104CT
1Mx64
1Mx16,
100Max
KMM366S104CT-G8
KMM366S104CT-GH
KMM366S104CT-GL
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Untitled
Abstract: No abstract text available
Text: KMM366S104CTL PC66 SDRAM MODULE KMM366S104CTL SDRAM DIMM 1Mx64 SDRAM DIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S104CTL is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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PDF
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KMM366S104CTL
KMM366S104CTL
1Mx64
1Mx16
400mil
166-pin
168-pin
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Untitled
Abstract: No abstract text available
Text: KMM366S104CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : +5uA to ± 1 .5uA.
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OCR Scan
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PDF
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KMM366S104CTL
200mV.
2K/32ms
4K/64ms.
KMM366S104CTL
1Mx64
1Mx16,
54Max)
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Untitled
Abstract: No abstract text available
Text: KMM366S104CTL PC66 SDR AM M O D U L E Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : -Input leakage currents (Inputs) : ±5uA to ±1 uA. -Input leakage currents (I/O) : ±5uA to ±1.5uA.
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OCR Scan
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PDF
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KMM366S104CTL
200mV.
2K/32ms
4K/64ms.
KMM366S1
04CTL
1Mx64
1Mx16,
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Untitled
Abstract: No abstract text available
Text: Preliminary PC100 SDRAM MODULE KMM366S104CT Revision History Revision .2 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. In(lnputs) : ± 5uA to ±1uA , - Cin to be measured at V dd I il (DQ) : ± 5uA to ± 1.5uA. = 3.3V, T a = 23°C, f = 1MHz, V
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OCR Scan
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PDF
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PC100
KMM366S104CT
2K/32ms
4K/64ms.
KMM366S104CT
1Mx64
1Mx16,
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KMM366S424BTL-G0
Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .
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OCR Scan
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PDF
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KM44S4020CT
KM48S2020CT
KM416S1020CT
KM416S1021CT
1Mx16
KM44S16020BT
KM48S8020BT
KM416S4020BT
------------------------------------16Mx4
4Mx64
KMM366S424BTL-G0
KMM466S824BT2F0
KMM466S424BT-F0
KMM466S824BT2-F0
4MX16
16MX8
KM44S4020CT
KM48S2020CT
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