Untitled
Abstract: No abstract text available
Text: KMM372E804CS DRAM MODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM componenets are applied for this module. KMM372E804CS KMM372E804CS DRAM MODULE
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KMM372E804CS
8Mx72
4Mx16
KMM372E804CS
KMM372E804C
8Mx72bits
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372E80 8 3CK/CS Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.1 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM372E80(8)3CK/CS DRAM MODULE KMM372E80(8)3CK/CS
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KMM372E80
8Mx72
8Mx72bits
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372E80 8 3BK/BS KMM372E80(8)3BK/BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372E80(8)3B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372E80(8)3B consists of nine CMOS 8Mx8bits DRAMs
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KMM372E80
8Mx72bits
400mil
168-pin
KMM372E803BK
KMM372E803BS
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4004C
Abstract: No abstract text available
Text: KMM372E804BS DRAM M ODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM M ODULE KMM372E804BS Revi si on Hi st or y Version 0.0 (Sept, 1997) ; Rem oved tw o AC param eters tCACP(access tim e from C AS) and tAAP(access tim e from col. addr.) in AC C H A R A C T E R IS T IC S .
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KMM372E804BS
8Mx72
4Mx16
372E804BS
x72bits
x16bits
4004C
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Untitled
Abstract: No abstract text available
Text: DRAM M ODULE KMM372E80 8 3BK/BS Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Sept. 1997 DRAM M ODULE KMM372E80(8)3BK/BS Revi si on Hi st or y Version 0.0 (Sept, 1997) ; Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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OCR Scan
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KMM372E80
8Mx72
72E80(
8Mx72bits
400mil
168-pin
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