capacitor electrolite 2200 uF siemens

Abstract: KSA940 KSC2073
Contextual Info: KSC2073 KSC2073 TV Vertical Deflection Output • Complement to KSA940 • Collector-Base Voltage : VCBO = 150V TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter

Contextual Info: KSC2073 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

nec 2sd381

Abstract: TIP65 MJ4361 2SD608A 2SD382 2SD1459R SD1478 idc2073
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2SD1080 2SD1562 2SD1562 2SD1763 2SD1763 2SD1953 40349 40349L 40349S 40349Vl 40349V2 40349V2 IDC2073 2SC1448 KSC2073 2SC1669 2SC1669 2SC1669R ~~g~~~~o 35 40 2SD1459Q 2SD1459R 2SC1669Y 2SD608 2SB1086A

KSC2073H2TSTU

Abstract: ksc2073-h2 *c2073h2 ksc2073
Contextual Info: KSC2073 KSC2073 TV Vertical Deflection Output • Complement to KSA940 • Collector-Base Voltage : VCBO = 150V TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter

ksa940

Contextual Info: KSA940 KSA940 Vertical Deflection Output Power Amplifier • Complement to KSC2073 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter

455BE

Contextual Info: KSA940 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT • Complement to KSC2073 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit V VcEO -150 -150 Emitter-Base Voltage Collector Current V ebo -5 V lc - 1.5 Base Current

Contextual Info: KSC2073 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT • Complement to KSA940 • Collector-Base Voltage V Cbo = 15 0 V ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit VcBO 150 VcEO 150 Emitter-Base Voltage Collector Current V eb o

KSC2073

Abstract: capacitor electrolite 2200 uF siemens KSA940 ksA940 samsung
Contextual Info: KSC2073 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT TO-220 • Complement to KSA940 • Collector-Base Voltage VCBO = 150V ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VCBO Symbol 150 V Collector-Emitter Voltage

Contextual Info: KSC2073 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT • Complement to KSA940 • Collector-Base Voltage: V Cb o = 150V ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VcB O Symbol 150 V Collector-Emitter Voltage

ksa940

Contextual Info: KSA940 KSA940 Vertical Deflection Output Power Amplifier • Complement to KSC2073 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
Ratings Units VCBO Symbol Collector-Base Voltage

KSA940

Abstract: KSC2073
Contextual Info: KSC2073 NPN Epitaxial Silicon Transistor Features • TV Vertical Deflection Output • Complement to KSA940 • Collector-Base Voltage : VCBO = 150V TO-220 1 1.Base Absolute Maximum Ratings Symbol 2.Collector 3.Emitter TA = 25°C unless otherwise noted Parameter

KSA940

Contextual Info: KSA940 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT * Complement to KSC2073 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage C haracteristic VcBO Symbol - 150 V Collector-Emitter Voltage V ceo - 150 V Emitter-Base Voltage

Contextual Info: KSC2073 NPN Epitaxial Silicon Transistor Features • TV Vertical Deflection Output • Complement to KSA940 • Collector-Base Voltage : VCBO = 150V TO-220 1 1.Base Absolute Maximum Ratings Symbol 2.Collector 3.Emitter TA = 25°C unless otherwise noted Parameter

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSA940 POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT • C om plem ent to KSC2073 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage Characteristic V cbO Sym bol - 150 V C ollector-E m ltter Voltage VcEO - 150 V Em itter-Base Voltage

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2073 TV VERTICAL DEFLECTION OUTPUT • C om plem ent to KSA940 • C ollector-B ase Voltage: V Cb o = 150V ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage Characteristic V cbO Sym bol 150 V C ollector-E m ltter Voltage

capacitor electrolite 2200 uF siemens

Abstract: KSA940 KSC2073
Contextual Info: KSC2073 NPN EPITAXIAL SILICON TRANSISTO R TV VERTICAL DEFLECTION OUTPUT • C o m p le m e n t to K S A 9 4 0 • C o lle c to r-B a s e V o lta g e : V Cb o = 1 5 0 V I A BSOLUTE M AXIMUM RATINGS Rating Unit C o l le c to r-B a s e V o lta g e Characteristic

Contextual Info: KSA940 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT • Complement to KSC2073 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation T „= 2 5 °C

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

BJT BD139

Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
Contextual Info: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1

IC 2073

Abstract: HC2073 KSC2073
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRAN S ISTO R 2073 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C126AG-03 芯片厚度：240±20µm 管芯尺寸：1260x1260µm 2 焊位尺寸：B 极 308×308µm 2；E 极 308×385µm 2

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink