Contextual Info: KSD794/794A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C om plem ent to KSB744/KSB744A TO -126 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage Characteristic V cbO Sym bol 70 V C ollector-E m ltter Voltage : KSD794 V cE O

Contextual Info: KSB744/744A KSB744/744A Audio Frequency Power Amplifier • Complement to KSD794/KSD794A TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter

d794 transistor

Abstract: d794 D794A
Contextual Info: KSD794/794A KSD794/794A Audio Frequency Power Amplifier • Complement to KSB744/KSB744A TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector- Base Voltage Parameter

KSD794

Abstract: KSD794A
Contextual Info: KSD794/794A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C o m p le m e n t to K S B 7 4 4 /K S B 7 4 4 A A BSOLUTE M AXIMUM RATINGS R a tin g U n it C o lle c to r- B a s e V o lta g e C h a r a c te r is tic V cbO Sym bol 70 V C o lle c to r-E m itte r V o lta g e : K S D 7 9 4

D794A

Abstract: d794 d794 transistor KSD794 KSD794A
Contextual Info: KSD794/794A KSD794/794A Audio Frequency Power Amplifier • Complement to KSB744/KSB744A TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector- Base Voltage Parameter

Transistor 63B

Abstract: KSD794 KSD794A ksb744
Contextual Info: KSD794/794A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB744/KSB744A ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage : K S D 7 9 4 : KSD794A Emitter-Base Voltage

Contextual Info: KSB744/744A KSB744/744A Audio Frequency Power Amplifier • Complement to KSD794/KSD794A TO-126 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units -70 V -45

d794 transistor

Abstract: d794 d794a
Contextual Info: KSD794/794A KSD794/794A Audio Frequency Power Amplifier • Complement to KSB744/KSB744A TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector- Base Voltage Parameter

Contextual Info: KSD794/794A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB744/KSB744A TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector- Base Voltage Collector-Emitter Voltage : KSD794 : KSD794A Emitter- Base Voltage Collector Current DC

Contextual Info: KSB744/744A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER . Complement to KSD794/KSD794A ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage Characteristic V cbO Symbol -70 V Collector Emitter V o lta g e : KSB744 VcEO -45 V -60

KSB744

Abstract: KSB744A
Contextual Info: KSB744/744A KSB744/744A Audio Frequency Power Amplifier • Complement to KSD794/KSD794A TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter

D794A

Abstract: d794 transistor d794 KSD794 KSD794A
Contextual Info: KSD794/794A KSD794/794A Audio Frequency Power Amplifier • Complement to KSB744/KSB744A TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector- Base Voltage Parameter

Contextual Info: KSB744/744A KSB744/744A Audio Frequency Power Amplifier • Complement to KSD794/KSD794A TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter

Contextual Info: KSD794/794A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB744/KSB744A TO -126 ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit Collector- Base Voltage VcB O 70 V Collector-Emitter Voltage : KSD794 VcEO 45

baa9

Abstract: TS 4142 t35b KSB834 KSD794 KSD794A KSD880 3a npn to126 transistor
Contextual Info: SAMSUNG SEMICONDUCTOR KSD794/794A INC IME D | 7*^4145 0007^14 4 NPN EPITAXIAL SILICON TRANSISTOR r- 33 ' AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB744/KSB744A ABSOLUTE MAXIMUM RATINGS Ta=25°C C h a ra c te ris tic Collector-Base Voltage Coilector-Emitter Voltage : KSD794

Contextual Info: KSB744/744A KSB744/744A Audio Frequency Power Amplifier • Complement to KSD794/KSD794A TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter

lt 744

Contextual Info: KSB744/744A PNP EXITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C om plem ent to KSD794/KSD794A ABSOLUTE MAXIMUM ATINGS C h a ra c te ris tic Sym bol Collector-Base Voltage Collector-Emitter Voltage : KSB 744 : KSB 744A Emitter-Base Voltage

lta 601

Contextual Info: KSD794/794A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB744/KSB744A ABSOLUTE MAXIMUM RATINGS C h a ra cteristic Rating Unit 70 45 60 5 3 5 0 .6 1 10 15 0 -5 5 ^ 1 5 0 V V V V A Sym bol Collector-Base Voltage Collector-Emitter Voltage : K S D 7 9 4

Contextual Info: KSD794/794A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB744/KSB744A TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector- Base Voltage V cbo 70 V Collector-Emitter V o lta g e : KSD794 VcEO 45

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

BJT BD139

Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
Contextual Info: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

dj audio transistor

Abstract: KSB708 t-33-f KSB707 KSD568 ksb744
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSB707 14E 0 I 7*^4142 0007500 S I T ? 1 - / 7 - PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POW&R AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE TO-220 • Complement to KSD568 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.