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    KTA2015 Search Results

    KTA2015 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KTA2015 Korea Electronics General Purpose Transistor Original PDF
    KTA2015 Korea Electronics General Purpose Transistor Scan PDF
    KTA2015 Korea Electronics EPITAXIAL PLANAR PNP TRANSISTOR Scan PDF
    KTA2015W Galaxy Semi-Conductor Holdings PNP Silicon Epitaxial Planar Transistor Original PDF

    KTA2015 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTA2015 TRANSISTOR PNP FEATURES SOT–323  Excellent hFE Linearity  Complementary to KTC4076 APPLICATIONS  General Purpose Switching MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-323 KTA2015 KTC4076 -100mA -400mA -100mA, -10mA -20mA 25Min

    KTA2015

    Abstract: marking Zo
    Text: KTA2015 PNP General Purpose Transistors P b Lead Pb -Free 3 1 2 SOT-323 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous


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    PDF KTA2015 OT-323 OT-323 -100mA, -10mA -100mA -20mA 07-Apr-10 KTA2015 marking Zo

    KTA2015

    Abstract: KTC4076
    Text: SEMICONDUCTOR KTC4076 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M ・Excellent hFE Linearity D A 3 1 G ・Complementary to KTA2015. J 2 : hFE 2 =25(Min.) at VCE=6V, IC=400mA. DIM A B C


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    PDF KTC4076 KTA2015. 400mA. KTA2015 KTC4076

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTC4076 TRANSISTOR NPN FEATURES SOT–323  Excellent hFE Linearity  Complementary to KTA2015 APPLICATIONS  General Purpose Switching 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-323 KTC4076 KTA2015 100mA 400mA 100mA, 25Min 40Min

    KTA2015

    Abstract: No abstract text available
    Text: KTA2015 SOT-323 KTA2015 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 3. COLLECTOR 0.1 W (Tamb=25℃) Collector current ICM: -0.5 A Collector-base voltage -35 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃


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    PDF KTA2015 OT-323 -100mA -400mA -100mA, -10mA -20mA KTA2015

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 KTA2015 TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM: 0.1 W (Tamb=25℃) Collector current -0.5 A ICM: Collector-base voltage


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    PDF OT-323 OT-323 KTA2015 -100mA -400mA -100mA, -10mA -20mA

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA2015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2008. 8. 29 Revision No : 2 1/2


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    PDF KTA2015

    transistor ZY

    Abstract: ZY marking zy- transistor marking zo sot KTC4076 marking ZY KTA2015W marking code ZO
    Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Power dissipation. PC=100mW z Excellent hFE Linearity. z Complementary to KTC4076. z Small package. KTA2015W Pb Lead-free APPLICATIONS z General purpose application and switching application.


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    PDF KTA2015W 100mW) KTC4076. OT-323 BL/SSSTF048 transistor ZY ZY marking zy- transistor marking zo sot KTC4076 marking ZY KTA2015W marking code ZO

    marking Z4

    Abstract: transistor z4 51 KTA2015 MARK Z MARK .Z
    Text: SEMICONDUCTOR KTA2015 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 Z4 1 2 Item Marking Description Device Mark Z KTA2015 hFE Grade 4 2, 4 * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


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    PDF KTA2015 marking Z4 transistor z4 51 KTA2015 MARK Z MARK .Z

    WY transistor

    Abstract: transistor marking WY KTA2015 KTC4076W Y MARKING NPN Silicon Epitaxial Planar Transistor .wy transistor
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity. z Complementary to KTA2015 z Power dissipation. PC=100mW KTC4076W Pb Lead-free APPLICATIONS z General purpose and switching application.


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    PDF KTC4076W KTA2015 100mW) OT-323 BL/SSSTF049 WY transistor transistor marking WY KTA2015 KTC4076W Y MARKING NPN Silicon Epitaxial Planar Transistor .wy transistor

    KTA2015

    Abstract: KTC4076
    Text: SEMICONDUCTOR KTA2015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M ・Excellent hFE Linearity D A 3 1 G ・Complementary to KTC4076. J 2 : hFE 2 =25(Min.) at VCE=-6V, IC=-400mA. DIM A B


    Original
    PDF KTA2015 KTC4076. -400mA. KTA2015 KTC4076

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTC4076 TRANSISTOR NPN FEATURES SOT–323  Excellent hFE Linearity  Complementary to KTA2015 APPLICATIONS  General Purpose Switching 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original
    PDF OT-323 KTC4076 KTA2015 100mA 400mA 100mA, 25Min 40Min

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: KTA2015 KTC4076
    Text: SEMICONDUCTOR KTA2015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M ᴌExcellent hFE Linearity : hFE 2 =25(Min.) at VCE=-6V, IC=-400mA. J A SYMBOL RATING UNIT Collector-Base Voltage VCBO


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    PDF KTA2015 KTC4076. -400mA. Transistor hFE CLASSIFICATION Marking CE KTA2015 KTC4076

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    LM8550

    Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
    Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo


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    PDF 2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original
    PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    KTA2015

    Abstract: KTC4076 35VCEO
    Text: SEMICONDUCTOR KTC4076 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M ᴌExcellent hFE Linearity : hFE 2 =25(Min.) at VCE=6V, IC=400mA. J A SYMBOL RATING UNIT Collector-Base Voltage VCBO 35


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    PDF KTC4076 KTA2015. 400mA. 100mA 400mA 100mA, 25Min. 40Min. KTA2015 KTC4076 35VCEO

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    PDF

    npn power transistor ic 400ma

    Abstract: KTA2015 KTC4076
    Text: SEMICONDUCTOR TECHNICAL DATA KTC4076 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • E x cellen t Ii f e L in earity : hFE 2 =25(M in.) a t V ce=6V, Ic=400mA. • Complementary to KTA2015. O 1 MAXIMUM RATINGS (Ta=25°C)


    OCR Scan
    PDF KTC4076 400mA. KTA2015. 100mA 400mA 100mA, 25Min, 40Min. npn power transistor ic 400ma KTA2015 KTC4076

    KTA2015

    Abstract: KTC4076
    Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC4076 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • Excellent Linearity : hFE 2 =25(Min.) a t V ce =6V, Ic=400mA. • Complementary to KTA2015.


    OCR Scan
    PDF KTC4076 400mA. KTA2015. 100mA 400mA 100mA, 25Min, 40Min. KTA2015 KTC4076

    KTC4076

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTC4076 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • E x cellen t I lfe L in earity : hFE 2 =25(M in.) a t V ce=6V, Ic=400mA. E B M - T * h.I T • Complementary to KTA2015.


    OCR Scan
    PDF 400mA. KTC4076 KTA2015. 100mA 400mA 100mA, 100mA 25Min, 40Min. KTC4076

    KTA2015

    Abstract: KTC4076
    Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR T E C H N IC A L D A T A KTA2015 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Iif e Linearity : hFE 2 =25(Min.) a t V ce=-6V , Ic=-400mA. • Complementary to KTC4076.


    OCR Scan
    PDF KTA2015 -400mA. KTC4076. -100-100-lk KTA2015 KTC4076

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTA2015 e p it a x ia l p l a n a r p n p t r a n s is t o r GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent h FE Linearity : hFE 2 =25(Min.) at V ce= -6V , Ic=-400mA. • Complementary to KTC4076. MAXIMUM RATINGS (Ta=25°C)


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    PDF -400mA. KTC4076. KTA2015 25Min. 40Min.

    KTA2015

    Abstract: KTC4076
    Text: SEMICONDUCTOR TECHNICAL DATA KT A2015 e p it a x ia l p l a n a r p n p t r a n s is t o r GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent I lfe Linearity : hFE 2 =25(Min.) a t V Ce = - 6 V , Ic=-400mA. • Complementary to KTC4076.


    OCR Scan
    PDF KTA2015 -400mA. KTC4076. -100-100-lk KTA2015 KTC4076