L2SD1781KQLT1 Search Results

L2SD1781KQLT1 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
L2SD1781KQLT1		Leshan Radio Company	Medium Power Transistor(32V, 0.8A)		Original	PDF
L2SD1781KQLT1G		Leshan Radio Company	Medium Power Transistor(32V, 0.8A)		Original	PDF

L2SD1781KQLT1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G	Original	L2SD1781KQLT1G L2SD1781KQLT1G S-L2SD1781KQLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB AEC-Q101 81KQLT1G	PDF
0440 Abstract: L2SD1781KQLT1G L2SD1781KRLT1G marking AFR AFR marking transistor afr Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G	Original	L2SD1781KQLT1G L2SD1781KQLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G 0440 L2SD1781KRLT1G marking AFR AFR marking transistor afr	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G	Original	L2SD1781KQLT1G L2SD1781KQLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SD1781K*LT1 3 COLLECTOR 1 3 BASE 2 EMITTER 1 2 SOT– 23 FAbsolute maximum ratings Ta = 25_C FDEVICE MARKING L2SD1781KRLT1=AFR L2SD1781KQLT1=AFQ FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE	Original	L2SD1781K L2SD1781KRLT1 L2SD1781KQLT1 L2SD1781K-1/4 L2SD1781K-2/4 L2SD1781K-3/4 OT-23	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G	Original	L2SD1781KQLT1G L2SD1781KQLT1G S-L2SD1781KQLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB AEC-Q101 81KQLT1G	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1	Original	L2SD1781KXLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT1G L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G	PDF
Untitled Abstract: No abstract text available Text: LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor 32V, 0.8A L2SD1781KLT1 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KLT1 FStructure Epitaxial planar type	Original	L2SD1781K 500mA L2SB1197K OT-23 /TO-236AB L2SD1781KQLT1 L2S1781KRLT1	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1	Original	L2SD1781KXLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT1G L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G	PDF
transistor AFR Abstract: AFR, TRANSISTOR marking AFQ AFR MARKING SOT-23 marking 1039 AFR marking L2SD1781KRLT1G transistor 1039 L2SD1781KQLT1 L2SD1781KQLT1G Text: LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor 32V, 0.8A L2SD1781KLT1 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KLT1 4) Pb Free Package is Available.	Original	L2SD1781K 500mA L2SB1197K OT-23 /TO-236AB L2SD1781KQLT1 L2SD1781KQLT1G L2SD1781KRLT1 L2SD1781KRLT1G transistor AFR AFR, TRANSISTOR marking AFQ AFR MARKING SOT-23 marking 1039 AFR marking transistor 1039 L2SD1781KQLT1	PDF