transistor 3005 2
Abstract: SILICON SMALL-SIGNAL DICE MPSH24 MPSH34 MPS-H34 transistor 3005
Text: MOTOROL A SC -CDIODES/OPTO} f 6367255 MOTOROLA SC 34 Ï F| L3b7255 □□3005 3 3 <D I O D E S / O P T O > 34C 38023 D 7- J /-/7 SILICON SMALL-SIGNAL TRANSISTOR DICE continued) MPSHC24 DIE NO. — npn LINE SOURCE — DMB203 (I This die provides performance similar to that of the following device types:
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L3b7255
DMB203
MPSHC24
MPSH11
MPSH19
MPSH24
MPSH32
MPSH34
transistor 3005 2
SILICON SMALL-SIGNAL DICE
MPSH34
MPS-H34
transistor 3005
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MPQ2369
Abstract: DDT323S DDT32
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Sw itching Transistor MPQ2369 NPN Silicon M otorola Preferred D evice fui ftp Hai Rii Eoi m TI L r\ i NPN [y\J r v i r v i LU LaJ LaJ U l l l j li l i l C A S E 646-06, S T Y L E 1 TO-116 MAXIM UM RATING S Rating
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MPQ2369
O-116
0CH3237
MPQ2369
DDT323S
DDT32
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Am plifier Transistors NPN Silicon MMBT6428LT1 MMBT6429LT1 C0LLE CT0R 3 EMITTER 1 2 M AXIMUM RATINGS Rating Symbol 6428LT1 6429LT1 Unit C ollector-Em itter Voltage VCEO 50 45 Vdc C ollector-B ase Voltage VCBO 60 55 Vdc
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MMBT6428LT1
MMBT6429LT1
6428LT1
6429LT1
O-236AB)
Ma31SD
BT6428LT1
BT6429LT1
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mpq2222 motorola
Abstract: transistor 2222a q2222 MPQ2222A ip 2222A 2222A MOTOROLA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors MPQ2222 MPQ2222A* [u i iip [ip n il nói m i t i NPN Silicon L /S J lf \ i ‘ Motorola Preferred Device NPN r v i. r v i Lil tU 111 UJ LU [ü LÜ MAXIMUM RATINGS Rating MPQ2222A Unit 40
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MPQ2222
MPQ2222A*
MPQ2222A
O-116
Q0T3232
mpq2222 motorola
transistor 2222a
q2222
ip 2222A
2222A MOTOROLA
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA20LT1 General Purpose A m plifier NPN Silicon COLLECTOR 1 BASE 4 2 EMITTER CASE 3 1 8 -0 8 , STYLE 6 S O T -2 3 TO -236A B MAXIMUM RATINGS Symbol Value C ollector-Em itter Voltage VCEO 40 Vdc E m itter-Base Voltage
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MMBTA20LT1
-236A
0aT317H
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRB20200CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCHMODE Power MBRB20200CT Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This sta te -o f-the -a rt device is designed for use in high frequency switching power
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MBRB20200CT/D
MBRB20200CT
b3b7555
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1N4742A 12 volt zener diode
Abstract: MZPY12 MZPY47 BZX85C51 MOT zener diode, t2 diode zener 1n4742a MZPY24 MZPY15 MZPY13 MZPY33
Text: riOTOROLA SC D I O D E S / O P T O D b4E • b3b75SS 00fl5L*CH b7S ■ SECTION 4.2.4 DATA SHEETS ZENER VOLTAGE REGULATOR DIODES — continued Section 4.2.4.1 Axial Leaded — continued SECTION 4.2.4.1.2 1-1.3 WATT DO-41 GLASS MULTIPLE PACKAGE QUANTITY (MPQ)
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b3b75SS
DO-41
1N4728A
1N4764A
BZX85C3V3
BZX85C100
M-ZPY100
L3b7255
1N4742A 12 volt zener diode
MZPY12
MZPY47
BZX85C51 MOT
zener diode, t2
diode zener 1n4742a
MZPY24
MZPY15
MZPY13
MZPY33
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M T10V275* M M T10V400* Advance Information •Motorola preferred devices Thyristor Surge Suppressors High Voltage Bidirectional TVS Devices BIDIRECTIONAL THYRISTOR SURGE SUPPRESSORS 25 WATTS STEADY STATE These transient voltage suppression TVS devices prevent overvoltage
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T10V275*
T10V400*
L3b7255
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N-Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 1 SOURCE MAXIMUM RATINGS Symbol Value Unt Drain-Source Voltage VDSS 60 V Draln-Gate Voltage VDGR 60 V Gate-Source Voltage - Continuous
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VN0300L
b3b7255
0CH37b5
15Vdc
L3b7255
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