Contextual Info: OKI electronic components 0 L4112 N-7Q 1.48 |im High Power Butterfly Module GENERAL DESCRIPTION The L4112N-7C is a 1.48 im high power laser device in a 14-pin "butterfly" package. This device provides optical power higher than 70 mW and can be used for Er doped fiber amplifiers.

thermo electrical cooler

Abstract: OL4112N-70 LF-500
Contextual Info: O K I electronic com ponents 0 L4112N-7Q 1.48 nm High Power Butterfly Module GENERAL DESCRIPTION The L4112N-70 is a 1.48 |im high power laser device in a 14-pin "butterfly" package. This device provides optical power higher than 70 mW and can be used for Er doped fiber amplifiers.

Contextual Info: FCI Semiconductor Preliminary Data Sheet T V S -L 4 1 S 6 N 6 S SMD Transient Voltage Suppressor 6.8V to 200 V_ Jun-93 Electrical Description Mechanical Dimensions MM Features O 400 Watt Peak Power Protection O Excellent Clamping Capability

Contextual Info: 400 WATT MELF SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS M A X IM U M BREAKDOW N VOLTAGE M A X IM U M M A X IM U M M A X IM U M 400 W REVERSE C LA M P IN G STANDPEAK REVERSE VOLTAGE IS PART N U m r E r VOLTAGE w m m m v ,* V, V o lts ) (V o lts ) 1. mA

c5129

Abstract: C5149 C5148 88E8001 CPUTEST29H D4203 D4004 u6202 R6130 R6503
Contextual Info: 5 4 3 2 A6M 1 REVISION: 2.0 128-BIT AMD S1g1 D Unbuffer DDR2 SO-DIMM Channel A/B x16 HyperTransport 200/400/800 MHz 638 PIN PACKAGE LVDS nVIDIA Gigabit Ethernet RTL8111B PCI-E x1 CRT C51MV C TV OUT X8 /X4 HyperTransport 200/400/800 MHz BGA 468 PCMCIA 33MHz

smd 748 36A

Abstract: l41 59 ota ca 3080 L41-10 L41-10A L41-11 L41-11A L41-12 L41-22
Contextual Info: FCI TVS-L41 SeHeS Semiconductor Preliminary Data Sheet SMD Transient Voltage Suppressor 6.8V to 2 0 0 V [ Electrical Description jun -93 Mechanical Dimensions M M 4.06/4.60 T 3.30/3.90 u L_ L— 5 .1 0 /5 .5 8 — J Load .1 1/.30 1.65/2.19 H H " C 'T C A "

Contextual Info: m Scottsdale, A Z m Micmsemi M TGL41-6.8 THRU TGL41-200CA Progress P owered b y Technology 8700 E. Thomas Road Scottsdale, AZ 85252 Phone: 602 941-6300 Fax: (602)947-1503 Features • Economical Series For 500 Watt Surface Mount Transient Voltage Suppressor

M5705

Abstract: M5010 l4030 L2203 ali m5705 rgb led moving message display l1113 l1636 ALi M5113 A2 l1117 445
Contextual Info: CodeWarrior Development Studio for Microcontrollers V10.x HC S 08/RS08 Build Tools Utilities Manual Revised: June 3, 2010 Freescale, the Freescale logo, CodeWarrior and ColdFire are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Flexis and Processor Expert are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.

u 620 tg

Abstract: l4147
Contextual Info: TGL41-6.8 THRU TGL41-200A SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Voltage - 6.8 to 200 Volts 400 Watt Peak Pulse Power FEATURES ♦ For surface mounted applications DO-213AB ♦ Plastic material used carries Underwriters Labo­ ratory Flammability Classifications 94V-0

PAL 012a

Abstract: U5404 88E8001 asus circuit pal 012A C30015 IC U5502 C23010 78L05 D4004
Contextual Info: 5 4 3 2 A6T 1 REVISION: 1.01 128-BIT AMD S1g1 Channel A/B D Unbuffer DDR2 SO-DIMM cc x16 HyperTransport 200/400/800 MHz 638 PIN PACKAGE LVDS nVIDIA Gigabit Ethernet RTL8111B PCI-E x1 C51MV nVIDIA PCI-E x16 CRT G73M X8 /X4 HyperTransport 200/400/800 MHz FWH

TGL41

Abstract: TGL41-10 TGL41-170CA TGL41-200CA TGL41-6
Contextual Info: TGL41-6.8 thru TGL41-200CA I n ter n a tio n a l S e m ic o n d u c to r , I n c . TR AN SIEN T VO LTAG E SUPPRESSO RS SURFACE M OUNT 5.5 to 171 VOLTS 400 WATT PEAK POWER -G - 1.0 WATT STEADY STATE —G1—fr S i T MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25 ° C am bient unless otherwise specified

HERA86G

Contextual Info: INDEX 1 N 3 4 A . .95 1 N 5 5 B . . 9 5 1 N 6 0 . . 95 1 N 8 7 . . 9 5 1 N 9 8 A . . 9 5 1 N 1 0 Q . .95 1 N 1 3 7 B . .9 5 1 N138B. .95 1 N 2 0 0 . . 9 5 1 N 2 0 1 . .95 1 N 2 0 2 . .95 1 N 2 0 3 . .95

1N 7812

Abstract: 7812 5A 7808 or 7809 U 7812 JAN1N6108 JAN1N6108US
Contextual Info: Transient Voltage Suppressors P art N um ber • TVS Package Outline M icrosem i D ivision Type M il Spec Ppp Data S heet ID ¡ W Micmsemi j I Pulse I Type Vwm (V) Ipp (A) 8.5 8.5 34.7 34 8.5 8,5 VB R <V) Vc (V ) ID Toi. <UA) i * m \ 9.44 14.4 5 5 14 50

IMPATT

Abstract: L4142
Contextual Info: ML 4000 SERIES GALLIUM ARSENIDE IMPATT DIODES Gallium Arsenide Im patt Diodes are available as flat profile, high low profile and low high low profile devices. These term s describe the doping profile in the active region o f the device. For high low and low high low profiles the avalanche region is more closely confined in the region o f peak electric