LAE6000Q Search Results

LAE6000Q Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
LAE6000Q		Philips Semiconductors	Low Noise Microwave Transistor		Original	PDF
LAE6000Q		Philips Semiconductors	Low Noise Microwave Transistor		Scan	PDF

LAE6000Q Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MARKING CODE R7 Abstract: IEC-134 transistor t4B IEC134 MARKING CODE R7 RF TRANSISTOR common emitter amplifier TRANSISTOR BL 100 LAE6000Q Text: 7 LAE6000Q M A IN T E N A N C E T Y P E PHILIPS INTERNATIONAL 5bE J> m 7110fl2b D 04blô0 GOT IPHIN LOW-NOISE MICROWAVE TRANSISTOR NPN tran sisto r fo r co m m o n -e m itte r class-A low-noise a m p lifie rs up to 4 G Hz. Self-aligned process e n tire ly ion im planted and gold sandwich m e ta lliza tio n ensure an o p tim u m te m perature p ro file ,	OCR Scan	LAE6000Q 7110fi2t 004bia0 MARKING CODE R7 IEC-134 transistor t4B IEC134 MARKING CODE R7 RF TRANSISTOR common emitter amplifier TRANSISTOR BL 100 LAE6000Q	PDF
MARKING CODE R7 Abstract: IEC134 LAE6000Q SOT-100 Text: 1I N AMER P H I L I P S / D I S C R E T E JDbE D • ^ 5 3^31 5 ■ LAE6000Q r-3 \|-i5 r LOW-NOISÉ MICROWAVE TRANSISTOR N-P-N transistor fo r com m on-em itter class-A low-noise amplifiers up to 4 G H z. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optim um temperature profile,	OCR Scan	OT-100. LAE6000Q MARKING CODE R7 IEC134 LAE6000Q SOT-100	PDF
IEC-134 Abstract: IEC134 transistor t4B MARKING CODE R7 RF TRANSISTOR LAE6000Q T4B marking Text: 7^ 3 / " / ^ LAE6000Q M AINTENANC E TYPE PHILIPS INTERNATIONAL 5bE J> 711Qfi5t, D04blflQ OOT IPHIN LOW-NOISE MICROWAVE TRANSISTOR NPN transistor fo r common-emitter class-A low-noise amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optim um temperature profile,	OCR Scan	LAE6000Q 711005b 004blfl0 IEC134) IEC-134 IEC134 transistor t4B MARKING CODE R7 RF TRANSISTOR LAE6000Q T4B marking	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE ObE D • 1 bbS3T31 0014^13 5 ■ LAE6000Q 7 V r-3 \|-l5 T LOW-NOISE MICROWAVE TRANSISTOR N-P-N transistor for common-emitter class-A low-noise amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optimum temperature profile,	OCR Scan	bbS3T31 LAE6000Q	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE E5E D btiS3131 DOltEBS S • T -Z S-O l Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE f Vce GHZ y f” Tc ' (mAX ' - - PL1<i. (W Gpo* (dB) CLASS A, MEDIUM POWER LAE6000Q LBE2003S LCE2003S	OCR Scan	btiS3131 LAE6000Q LBE2003S LCE2003S LBE2009S LCE2009S LUE2003S LUE2009S OT-100 FO-45	PDF
BPW22A Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey	OCR Scan	BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8	PDF
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350	PDF
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc	PDF
FET BFW10 Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI	OCR Scan	BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11	PDF
TXD10K40 Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40	OCR Scan	bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G	PDF