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    LD1106S Price and Stock

    Advanced Linear Devices Inc ALD1106SBL

    MOSFET 4N-CH 10.6V 14SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ALD1106SBL Tube 964 1
    • 1 $5.86
    • 10 $5.86
    • 100 $5.86
    • 1000 $2.8
    • 10000 $2.8
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    LD1106S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LD1106S Unknown High Performance N-Channel POWERJFET with Schottky Diode Original PDF

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    ad 1204

    Abstract: TO252-DPAK package Lovoltech TO252-DPAK LD1106S POWERJFET LD103SG6 026E-02 J-FET TRANSISTOR
    Text: PWRLITE LD1106S High Performance N-Channel POWERJFETTM with Schottky Diode Features Description ™ ™ ™ ™ ™ ™ ™ The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low


    Original     		PDF LD1106S ad 1204 TO252-DPAK package Lovoltech TO252-DPAK LD1106S POWERJFET LD103SG6 026E-02 J-FET TRANSISTOR

    Lovoltech

    Abstract: LD103SG6 LD1106S
    Text: PWRLITE LD1106S High Performance N-Channel JFET Transistor with Schottky Diode Description Features Trench Power JFET with low threshold voltage Vth. Device fully “ON” with Vgs = 0.7V Optimum for “Low Side” Buck Converters Optimized for Secondary Rectification in isolated DC-DC


    Original     		PDF LD1106S Lovoltech LD103SG6 LD1106S

    Lovoltech

    Abstract: LD1106S 7E02 LS1106 TO252-DPAK package LD103SG6 LS1106S jfet transistor Diode and Transistor 1980 IR 2E02
    Text: PWRLITE LS1106S High Performance N-Channel JFET Transistor with Schottky Diode Description Features Trench Power JFET with low threshold voltage Vth. Device fully “ON” with Vgs = 0.7V Optimum for “Low Side” Buck Converters Optimized for Secondary Rectification in isolated DC-DC


    Original     		PDF LS1106S LD1106S Lovoltech LD1106S 7E02 LS1106 TO252-DPAK package LD103SG6 LS1106S jfet transistor Diode and Transistor 1980 IR 2E02