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    LET20030C Search Results

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    LET20030C Price and Stock

    STMicroelectronics LET20030C

    RF MOSFET LDMOS 28V M243
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    DigiKey LET20030C Box 43 1
    • 1 $81.85
    • 10 $81.85
    • 100 $65
    • 1000 $65
    • 10000 $65
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    Bristol Electronics LET20030C 43
    • 1 -
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    Quest Components LET20030C 34
    • 1 $118.9056
    • 10 $101.0698
    • 100 $95.1245
    • 1000 $95.1245
    • 10000 $95.1245
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    LET20030C Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LET20030C STMicroelectronics RF Power Transistor Original PDF
    LET20030C STMicroelectronics RF FETs, Discrete Semiconductor Products, MOSF RF PWR N CH 80V LDMOST M243 Original PDF

    LET20030C Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: LET20030C RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT @28 V = 45 W with 13.9 dB gain @ 2000 MHz ■ POUT (@36 V) = 53 W with 13.3 dB gain @


    Original
    LET20030C 2002/95/EC LET20030C PDF

    LET20030C

    Abstract: M243
    Text: LET20030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 applications • IS-97 CDMA PERFORMANCES POUT = 4.5 W EFF. = 17 % • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION M243 epoxy sealed • POUT = 30 W with 11 dB gain @ 2000 MHz


    Original
    LET20030C IS-97 LET20030C M243 PDF

    Untitled

    Abstract: No abstract text available
    Text: LET20030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 applications • IS-97 CDMA PERFORMANCES POUT = 4.5 W EFF. = 17 % • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION M243 epoxy sealed • POUT = 30 W with 11 dB gain @ 2000 MHz


    Original
    LET20030C IS-97 LET20030C PDF