LL914
Abstract: LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454
Text: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. LL-34 Cathode band Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current
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Original
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LL914.
LL4454
LL-34
LL914
LL4149
LL4151
LL4152
LL4453
LL914
LL4149
LL4151
LL4152
LL4153
LL4154
LL4447
LL4449
LL4454
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LL4149
Abstract: LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914
Text: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV
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Original
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LL914.
LL4454
LL-34
LL914
LL4149
LL4151
LL4152
max30
LL4453
LL4149
LL4151
LL4152
LL4153
LL4154
LL4447
LL4449
LL4454
LL914
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PDF
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LL4149
Abstract: LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914
Text: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV
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Original
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LL914.
LL4454
LL-34
LL914
LL4149
LL4151
LL4152
LL4453
LL4149
LL4151
LL4152
LL4153
LL4154
LL4447
LL4449
LL4454
LL914
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diodes ir
Abstract: LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914
Text: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV
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Original
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LL914.
LL4454
LL-34
LL914
LL4149
LL4151
LL4152
max30
LL4453
diodes ir
LL4149
LL4151
LL4152
LL4153
LL4154
LL4447
LL4449
LL4454
LL914
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BAQ33
Abstract: BAQ34 BAQ35 BAV100 BAV101 BAV102 BAV103 LL4148 LL4150 LL4151
Text: Surface Mount Fast / Ultra Fast Bridge Rectifiers Part No. CrossReference RMB2S RMB4S RMB6S - EDF1AS EDF1BS EDF1CS EDF1DS - Max. Avg. Rectified Current Peak Inverse Voltage Peak Fwd. Surge Current @ 8.3 ms Superimposed Max. Forward Voltage @ 25oC @ Rated Io
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Original
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-65oC
175oC
KDS160E
BAQ33
BAQ34
BAQ35
BAV100
BAV101
BAV102
BAV103
LL4148
LL4150
LL4151
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PDF
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LL4149
Abstract: No abstract text available
Text: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV
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Original
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LL914.
LL4454
LL-34
LL914
LL4149
LL4151
LL4152
LL4451
LL4453
LL4149
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PDF
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1N627
Abstract: la 4450 1N459a LL4148 LL4149 LL4150 LL4151 LL4152 LL4154 LL4446
Text: SW ITC H IN G DIO DES, SU RFA CE MOUNT, MELF PACKAGE Peak Power IS I P a rt Num ber LL4148 LL4149 LL415Q LL4151 LL4152 U 4153 LL4154 LL4446 LL4447 LL4448 L.L4449 L 1.4450 LL4451 LL4453 LL4454 Re er e D iss ip a tio n Voltage P„ I*» V,M VòltS) M a x im u m
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OCR Scan
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LL4148
LL4149
LL4150
LL4151
LL4152
U4153
LL4154
LL4446
LL4447
LL4448
1N627
la 4450
1N459a
LL4152
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PDF
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LL4447
Abstract: 1N4447 1N4447M
Text: S yn S E M i 5YM5EMI 5EMIC0HDUCT0R_ 1N4447 1N4447M LL4447 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics Symbol t a = 25°c unless otherwise noted.) Parameter Lim its Test Condition
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OCR Scan
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1N4447
1N4447M
LL4447
LL-34
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PDF
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Untitled
Abstract: No abstract text available
Text: 4684955 a? I T T SEMICONDUCTORS 87D 02327 »e 1m^a^ss 0DDS3a? t J~ D r . o9 SILICON DIODES General Purpose and Switching Diodes in MiniMELF Package Type Peak Inv. Voltage PIV M ax. Aver. Rectified Current lo Pow er Junction Dissipation Tem peraat 25 °C ture T,
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OCR Scan
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LL4148
LL4149
LL4150
LL4151
LL4152
LL4153
LL4154
LL4446
LL4447
LL4448
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PDF
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LL4149
Abstract: LL4150 LL4152 LL4153 LL4447 LL4449 LL4450 LL4451 LL4453 LL4454
Text: ITT S E M I C O N D / INTERMETALL b lE » • 4bfl2711 0003172 2^3 m i S l Silicon Diodes Silicon Diodes for general purpose and switching Cathode Mark h - 3.5*01-» / - These diodes are identical electrically to the corresponding JEDEC 1N . . . types.
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OCR Scan
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4b62711
01--K
LL4149
LL4150
LL4152
LL4153
LL4447
LL4449
LL4450
LL4451
LL4453
LL4454
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PDF
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Untitled
Abstract: No abstract text available
Text: SWITCHING DIODES, SURFACE MOUNT, MELF PACKAGE M a x im u m i i i i l i s P a rt N um ber P ow er D is s ip a tio n Pea* R e v e rs e V o lta g e M a x im u m A v e ra g e Fwct C u rre n t M a x im u m R e v e rs e V o lta g e D rop a t 1, M a x im u m R e v e rs e
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OCR Scan
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LL4148
LL4149
LL41S0
L14152
LL41S4
LL4447
LL4448
DO-35
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PDF
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TCA700Y equivalent
Abstract: SAJ300R SAF1092 SAK215 n525 by133 tca700y itt zener diode zpd ITT INTERMETALL BC327-25
Text: Pages Contents 2 and 3 List of Types 4 to 7 DIGIT2000 Digital TV System 8 to 21 ICs for TV and Radio Receivers 22 ICs for Telephone Applications 23 ICs for Electronic Clocks 24 and 25 ICs for Automobile Applications 26 ICs for other Applications 27 Voltage Stabilizers
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OCR Scan
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DIGIT2000
237th
YU-61000
TCA700Y equivalent
SAJ300R
SAF1092
SAK215
n525
by133
tca700y
itt zener diode zpd
ITT INTERMETALL
BC327-25
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PDF
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A2 diode
Abstract: 1N414S
Text: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - — - - - - : General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver. Power Junction Rectified Dissipation TemperaCurrent lo at 25 'G
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OCR Scan
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00Q13QÔ
DO-35
1N914
1N414S
1N4149
1N4150
1N4151
1N4152
1N4153
1N4154
A2 diode
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PDF
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1n4148 ITT
Abstract: 1N914 ITT 1N914/1N4148 1n4448 itt 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153
Text: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - - - — - - : G en era l P u r p o s e a n d S w it c h in g D io d e s in D O -3 5 P a ck a ge Type Peak Inv. Voltage PIV Max. Aver. Rectified Current lo Power
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OCR Scan
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DO-35
1N914
lF-10mA
RL-100Â
1N4148
1N4149
1N4150
1n4148 ITT
1N914 ITT
1N914/1N4148
1n4448 itt
1N4151
1N4152
1N4153
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