LP6836 Search Results

LP6836 Price and Stock

Filter by Manufacturer


Filtronic plc LP6836P70-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	LP6836P70-2		9			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Litton Industries LP6836P70 ALGAAS/INGAAS/ALGAAS PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (PHEMT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	LP6836P70		1			1 $116 10 $116 100 $116 1000 $116 10000 $116	Buy Now

LP6836 Datasheets (12)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
LP6836		Filtronic	Medium Power PHEMT		Original	PDF
LP6836		Filtronic	MEDIUM POWER PHEMT		Original	PDF
LP6836P100		Filtronic	Packaged 0.25W Power PHEMT		Original	PDF
LP6836P100-1		Filtronic	Packaged 0.25W Power PHEMT		Original	PDF
LP6836P100-2		Filtronic	Packaged 0.25W Power PHEMT		Original	PDF
LP6836P100-3		Filtronic	Packaged 0.25W Power PHEMT		Original	PDF
LP6836P70		Filtronic	PACKAGED MEDIUM POWER PHEMT		Original	PDF
LP6836-P70-1		Filtronic	PACKAGED MEDIUM POWER PHEMT		Original	PDF
LP6836-P70-2		Filtronic	PACKAGED MEDIUM POWER PHEMT		Original	PDF
LP6836-P70-3		Filtronic	PACKAGED MEDIUM POWER PHEMT		Original	PDF
LP6836SOT343		Filtronic	PACKAGED MEDIUM POWER PHEMT		Original	PDF
LP6836SOT343		Filtronic	PACKAGED MEDIUM POWER PHEMT		Original	PDF

LP6836 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
pHEMT transistor 360 Abstract: LP6836 MIL-HDBK-263 Text: Filtronic LP6836 Medium Power PHEMT Solid State DRAIN BOND PAD FEATURES • • • • +25 dBm Typical Power at 18 GHz 9.5 dB Typical Power Gain at 18 GHz Low Intermodulation Distortion 55% Power-Added-Efficiency at 18 GHz SOURCE BOND PAD x2 GATE BOND PAD	Original	LP6836 LP6836 DSS-029 pHEMT transistor 360 MIL-HDBK-263	PDF
Untitled Abstract: No abstract text available Text: LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility	Original	LP6836SOT343 LP6836SOT343 LP6836 OT343 SC-70) MIL-STD-1686 MIL-HDBK-263.	PDF
pHEMT transistor LP6836 Abstract: LP6836 LP6836P100 filtronic Solid State Text: Filtronic LP6836P100 Packaged 0.25W Power PHEMT Solid State FEATURES • • • • • GATE +24.5 dBm Typical Power at 15 GHz 12 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 55% Power-Added-Efficiency Color-coded by IDSS range SOURCE DRAIN	Original	LP6836P100 LP6836P100 LP6836orage, MIL-STD-1686 MILHDBK-263. DSS-031 pHEMT transistor LP6836 LP6836 filtronic Solid State	PDF
LP6836P70-3 Abstract: LP6836P70-1 LP6836-P70-1 LP6836P70 MIL-HDBK-263 pHEMT transistor 360 Text: LP6836P70 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 23 dBm Output Power at 1-dB Compression at 15 GHz ♦ 11.5 dB Power Gain at 15 GHz ♦ 50% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility	Original	LP6836P70 LP6836P70 MIL-STD-1686 MIL-HDBK-263. LP6836P70-3 LP6836P70-1 LP6836-P70-1 MIL-HDBK-263 pHEMT transistor 360	PDF
MIL-STD-1686 Abstract: LP6836 MIL-HDBK-263 pHEMT transistor LP6836 high power transistor s-parameters Text: LP6836 MEDIUM POWER PHEMT • DRAIN BOND PAD FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency SOURCE BOND PAD 2x GATE BOND PAD • DIE SIZE: 14.2X13.0 mils (360x330 µm) DIE THICKNESS: 3.9 mils (100 µm)	Original	LP6836 360x330 50x50 LP6836 MIL-STD-1686 MIL-HDBK-263 pHEMT transistor LP6836 high power transistor s-parameters	PDF
LP6836 Abstract: LP6836P70 LP6836SOT343 MIL-HDBK-263 RF TRANSISTOR 2GHZ Text: PRELIMINARY DATA SHEET LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 19 dB Power Gain at 2 GHz, 8 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS	Original	LP6836SOT343 LP6836P70 LP6836 OT343 SC-70) MIL-STD-1686 MIL-HDBK-263. LP6836SOT343 MIL-HDBK-263 RF TRANSISTOR 2GHZ	PDF
LP6836 Abstract: LP6836SOT343 MIL-HDBK-263 RF TRANSISTOR 2GHZ pHEMT transistor 360 Text: PRELIMINARY DATA SHEET LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS	Original	LP6836SOT343 LP6836SOT343 LP6836 OT343 SC-70) MIL-STD-1686 MIL-HDBK-263. MIL-HDBK-263 RF TRANSISTOR 2GHZ pHEMT transistor 360	PDF
LP6836-P70-1 Abstract: LP6836P70-1 pHEMT transistor LP6836 filtronic Solid State LP6836P70 LP6836 LP6836P70 LP6836-P70-2 LP6836-P70-3 LP6836P70-3 Text: Filtronic LP6836P70 PACKAGED MEDIUM POWER PHEMT Solid State FEATURES • • • • • SOURCE +23.0 dBm Typical Power at 15 GHz 11.5 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 50% Power-Added-Efficiency Color-coded by IDSS range DRAIN	Original	LP6836P70 LP6836P70 MIL-STD-1686 MILHDBK-263. P70-52 DSS-030 LP6836-P70-1 LP6836P70-1 pHEMT transistor LP6836 filtronic Solid State LP6836P70 LP6836 LP6836-P70-2 LP6836-P70-3 LP6836P70-3	PDF