Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LT2347 Search Results

    LT2347 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet p-channel 2A

    Abstract: 24V 1A mosfet
    Text: LT2347 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2347 is the P-Channel logic enhancement mode power field ● -30V/-2.6A, RDS ON =85 mΩ@VGS=-10V effect transistors are produced using high cell density, DMOS trench ● -30V/-2A, RDS(ON)=120 mΩ@VGS=-4.5V


    Original     		PDF LT2347 LT2347 -30V/-2 -30V/-2A, -30V/-1A, mosfet p-channel 2A 24V 1A mosfet

    Untitled

    Abstract: No abstract text available
    Text: LT2347 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2347 is the P-Channel logic enhancement mode power field ● -30V/-2.6A, RDS ON =85 mΩ@VGS=-10V effect transistors are produced using high cell density, DMOS trench ● -30V/-2A, RDS(ON)=120 mΩ@VGS=-4.5V


    Original     		PDF LT2347 LT2347 -30V/-2 -30V/-2A, -30V/-1A, 300us, OT-23

    Untitled

    Abstract: No abstract text available
    Text: LT2347 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2347 is the P-Channel logic enhancement mode power field ● -30V/-2.6A, RDS ON =85 mΩ@VGS=-10V effect transistors are produced using high cell density, DMOS trench ● -30V/-2A, RDS(ON)=120 mΩ@VGS=-4.5V


    Original     		PDF LT2347 LT2347 -30V/-2 -30V/-2A, -30V/-1A, OT-23