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    P-CHANNEL 30V DS MOSFET

    Abstract: LT4435
    Text: LT4435C -G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The LT4435C is the P-Channel logic enhancement mode power field ● RDS(ON)≦20mΩ@VGS=-10V effect transistors are produced using high cell density , DMOS trench ● RDS(ON)≦35mΩ@VGS=-4.5V


    Original     		PDF LT4435C P-CHANNEL 30V DS MOSFET LT4435

    P-CHANNEL 30V DS MOSFET

    Abstract: No abstract text available
    Text: LT4435C -G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The LT4435C is the P-Channel logic enhancement mode power field ● RDS(ON)≦20mΩ@VGS=-10V effect transistors are produced using high cell density , DMOS trench ● RDS(ON)≦35mΩ@VGS=-4.5V


    Original     		PDF LT4435C APPLICAT15V, 300us, P-CHANNEL 30V DS MOSFET