BYT230PI1000
Abstract: No abstract text available
Text: 25E D • Lb53131 DD52S0S fl DEVELOPMENT DATA BYT230PIV-1000 This data sheet contains advance information and specifications are subject to change w ithout notice. 7 - 0 3 -1^ N AUER PHILIPS/DISCRETE ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in ISOTOP envelopes, featuring low forward
|
OCR Scan
|
PDF
|
Lb53131
DD52S0S
BYT230PIV-1000
T-03-19
BYT230PI1000
|
BDX96
Abstract: TRANSISTOR BDX94 BDX94 BDX92 Q0500 BDX93 BDX91 BDX95 TO3 philips bdx96 philips
Text: • BDX92 BDX94 BDX96 Lb53131 OOaOGai 3 ■ N AUER PHILIPS/DISCRETE 5SE D SILICON EPITAXIAL B A S E POW ER TRAN SISTORS P-N-P transistors in TO-3 envelope fo r audio output stages and general am plifier and switching applications, N-P-N complements are B D X 91 , B D X 9 3 and BD X9 5.
|
OCR Scan
|
PDF
|
BDX92
BDX94
BDX96
BDX91,
BDX93
BDX95.
BDX94
BDX96
TRANSISTOR BDX94
BDX92
Q0500
BDX91
BDX95
TO3 philips
bdx96 philips
|
1N5822
Abstract: No abstract text available
Text: Philips Semiconductors APX fc,b53T31 00EbT34 Tflb Controlled avalanche Schottky Product specification N5820ID/21ID/22ID barrier diodes N AMER PHILIPS/DISCRETE DESCRIPTION Schottky barrier diodes in hermetically sealed SOD84A Implosion Diode ID envelope,
|
OCR Scan
|
PDF
|
b53T31
00EbT34
N5820ID/21ID/22ID
OD84A
1N5820
1N5821
1N5822
1N5822
|
Untitled
Abstract: No abstract text available
Text: APX bb53T31 □□23737 b37 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistors BSN304; BSN304A N AUER PH IL IPS /DISCR ETE b7E D FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL • High-speed switching
|
OCR Scan
|
PDF
|
bb53T31
BSN304;
BSN304A
Lb53131
bbS3T31
QD237T3
|
btw40
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbS3131 D 0 i n 3 7 ObE D 4 BTW40 SERIES r ~ a s -~ /7 THYRISTORS Also available to BS9341-F083 Glass-passivated silicon thyristors in metal envelopes, intended for use in power control applications in general, and lighting control in a.c. controller circuit up to 2,5 kW in particular. A feature of the
|
OCR Scan
|
PDF
|
bbS3131
BTW40
BS9341-F083
BTW40-400R
Lb53131
|
FZH 111
Abstract: fzh 101 BUX47 BUX47A
Text: I J ESE D N AMER P H I L I P S / D I S C R E T E • ^ 5 3 1 3 1 OaiTG53 h ■ BUX47 BUX47A T~- 3 3 - I S SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a T O -3 envelope, intended for use in converters, inverters, switching regulators, m otor control systems etc.
|
OCR Scan
|
PDF
|
OaiTG53
BUX47
BUX47A
FZH 111
fzh 101
BUX47A
|