PD70236
Abstract: uPD70236
Text: DRAM-CPU CONNECTION METHODS 1994, 1996 Document No. M11443EJ3V0AN00 3rd edition (Previous No. IEA-1302) Date Published August 1996 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
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M11443EJ3V0AN00
IEA-1302)
PD70236
uPD70236
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ry 130-2
Abstract: No abstract text available
Text: APPLICA TION NOTE \ NEC DRAM-CPU CONNECTION METHODS \ \ NEC Corporation 1994, 1996 \ \ Document No. M11443EJ3V0AN00 3rd edition (Previous No. IEA-1302) Date Published August 1996 P Printed in Japan 1215 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
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M11443EJ3V0AN00
IEA-1302)
ry 130-2
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Untitled
Abstract: No abstract text available
Text: APPLICA TION NOTE NEC DRAM-CPU CONNECTION METHODS I NEC Corporation 1 9 9 4 ,1 9 9 6 Document No. M11443EJ3V0AN00 3rd edition (Previous No. IEA-1302) Date Published August 1996 P Printed in Japan The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
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OCR Scan
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M11443EJ3V0AN00
IEA-1302)
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