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    Untitled

    Abstract: No abstract text available
    Text: M28W430 M28W440 VERY LOW VOLTAGE 4 Megabit x8 or x16, Block Erase FLASH MEMORY PRODUCT PREVIEW DUAL x8 and x16 ORGANIZATION MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) – Two 8K Byte or 4K Word Key Parameter Blocks


    Original
    PDF M28W430 M28W440 10/15mA 120ns TSOP48

    M28W430

    Abstract: No abstract text available
    Text: M28W430 M28W440 VERY LOW VOLTAGE 4 Megabit x8 or x16, Block Erase FLASH MEMORY DATA BRIEFING DUAL x8 and x16 ORGANIZATION MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) – Two 8K Byte or 4K Word Key Parameter Blocks


    Original
    PDF M28W430 M28W440 10/15mA 120ns TSOP48 150ns 180ns

    intel pa28f400

    Abstract: AN907 AN907 applications E28F002BV-T M28F210 M28F211 M28F221 M28W231 28F400BV-B pa28f400
    Text: AN907 APPLICATION NOTE COMPATIBILITY BETWEEN ST BOOT BLOCK AND INTEL SMARTVOLTAGE FLASH MEMORIES by Patrick PIGNON INTRODUCTION Flash memory is proving to be a popular choice for the storage of information which is to be updated in-circuit at a later time after production. The larger capacity available and lower cost with the Flash


    Original
    PDF AN907 intel pa28f400 AN907 AN907 applications E28F002BV-T M28F210 M28F211 M28F221 M28W231 28F400BV-B pa28f400

    intel pa28f400

    Abstract: AN907 AN907 applications
    Text: AN907 APPLICATION NOTE COMPATIBILITY BETWEEN ST BOOT BLOCK AND INTEL SMARTVOLTAGE FLASH MEMORIES by Patrick PIGNON INTRODUCTION Flash memory is proving to be a popular choice for the storage of information which is to be updated in-circuit at a later time after production. The larger capacity available and lower cost with the Flash


    Original
    PDF AN907 intel pa28f400 AN907 applications

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON llllM J ilL liM W Iie i M28W430 M28W440 VERY LOW VOLTAGE 4 Megabit x8 or x16, Block Erase FLASH MEMORY PRODUCT PREVIEW DUAL x8 and x16 ORGANIZATION MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or bottom location) - Two 8K Byte or 4K Word Key Parameter


    OCR Scan
    PDF M28W430 M28W440 10/15mATypical 120ns TSOP56 M28W430,

    Untitled

    Abstract: No abstract text available
    Text: M28W430 M28W440 SGS-THOMSON VERY LOW VOLTAGE 4 Megabit x8 or x16, Block Erase FLASH MEMORY P R O D U C T PRE VIE W D U AL x8 and x1 6 O R G A N IZA TIO N M E M O R Y ER A SE in B LO C K S - O ne 16K Byte or 8K W ord Boot Block (top or bottom location) - Two 8K Byte or 4K W ord Key P a ram ete r


    OCR Scan
    PDF M28W430 M28W440