M54HC133
Abstract: M54HC133F1R M74HC133 M74HC133B1R M74HC133C1R M74HC133M1R
Text: M54HC133 M74HC133 13 INPUT NAND GATE . . . . . . . . HIGH SPEED tPD = 13 ns TYP. at VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) at TA = 25° C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OutpuT IMPEDANCE
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M54HC133
M74HC133
54/74LS133
M54HC133F1R
M74HC133M1R
M74HC133B1R
M74HC133C1R
M54/74HC133
13INPUT
M54HC133
M54HC133F1R
M74HC133
M74HC133B1R
M74HC133C1R
M74HC133M1R
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M74HC133
Abstract: No abstract text available
Text: M54HC133 M74HC133 SGS-THOMSON * 5 7 ILO 13 INPUT NAND GATE HIGH SPEED tpD = 13 ns TYP. at Vcc = 5 V LOW POWER DISSIPATION Ice = 1 HA (MAX.) at Ta = 25* C HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OutpuT IMPEDANCE
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OCR Scan
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PDF
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M54HC133
M74HC133
54/74LS133
M54HC133F1
74HC133M
74HC133B1R
74HC133C1R
M54/74HC133
13-INÂ
S-10275
M74HC133
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M74HC133
Abstract: No abstract text available
Text: Æ 7 S G S -T H O M S O N A T# RiflD êK i[LI in^®RDD©i M54HC133 M74HC133 13 INPUT NAND GATE • HIGH SPEED tp D = 18 ns (T Y P . at V Cc = 5V ■ LOW POWER DISSIPATION lcc = 1 i*A (MAX.) at Ta = 25°C is n ;y ji I 1 16 1I ■ HIGH NOISE IMMUNITY V NIH = V N|L = 2 8 % V Cc (M IN .)
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OCR Scan
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PDF
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M54HC133
M74HC133
M74HC133
M54HC133
M54/74HC133
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M74HC133
Abstract: No abstract text available
Text: SbE T> m 7 ^ 2 3 7 003^075 b 3 T » S f i T H _ Æ 7 S G S -T H O M S O N [*[!ä & i(g raiO S M54HC133 M74HC133 S G S-THOMSON T LV J - 2 / 13 • HIGH SPEED tpD = 18 ns (TYP. at VCc = 5V ■ LOW POWER DISSIPATION ICC = 1 M (MAX.) at T a « 25°C
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OCR Scan
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PDF
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M54HC133
M74HC133
M74HC133
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54HC133
Abstract: M74HC133B1
Text: ^ t7 M54HC133 M74HC133 SCS-THOMSON m 13 INPUT NANDGATE HIGHSPEED tpD = 13 ns TYP. at Vcc = 5 V LOW POWER DISSIPATION Ice = 1 |iA (MAX.) at Ta = 25" C HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OutpuT IMPEDANCE
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OCR Scan
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PDF
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54HC133
74HC133
54/74LS133
54HC133F1R
M74HC133B1
74HC133C1R
M54/74HC133
13-INPUT
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Untitled
Abstract: No abstract text available
Text: r r “ /# „ M 5 4 H C 133 j S C S -T H O M S O N 6SIDE[S ilLi gîls!©[ü!ID(gi M 7 4 H C 133 13 INPUT NAND GATE • HIGH SPEED tpo = 18 ns (TYP. at V c c = 5V ■ LOW POWER DISSIPATION Ice = 1 M (MAX.) at T a = 25°C ■ HIGH NOISE IMMUNITY V N IH = V NIL = 28 »/o V c c (MIN.)
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OCR Scan
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PDF
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54/74LS133
M74HC133
M54HC133
M54/74HC133
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74HC133
Abstract: 54HC 74HC M54HC133 M74HC133 M74HC133B1N
Text: SGS-THOMSON [M [i3©ELi gir[MM©lD M 54HC133 M 74HC133 13 INPUT NAND GATE HIGH SPEED tPD = 18 ns (TYP. at VCc = 5V LOW POWER DISSIPATION Ice = "I /*A (MAX.) at Ta = 25°C HIGH NOISE IMMUNITY V nih = V n il = 28% V c c (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS
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OCR Scan
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PDF
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M54HC133
M74HC133
54/74LS133
M54/74HC133
13-INPUT
M54/74HC133
74HC133
54HC
74HC
M54HC133
M74HC133
M74HC133B1N
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M74HC133
Abstract: 54HC 74HC M54HC133
Text: HS-CM O S INTEGRATED / , CIRCUITS BMiirif. f !? MWHC133 13 IN P U T N A N D G A TE DESCRIPTION T h e M 5 4 /7 4 H C 1 3 3 is a high speed C M O S 1 3 -IN P U T N A N D G A TE fabricated in silicon gate C 2M O S technology. It has the sam e high speed
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OCR Scan
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PDF
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MWHC133
M54/74HC133
13-INPUT
M54HC133
M74HC133
to125Â
54HC
74HC
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