Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 Reverse voltage (DC) Repetitive peak reverse-voltage
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MA3X791
MA791)
MA3X786
MA786)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2
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MA3X791
MA791)
MA3X786
MA786)
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DIODE M4A
Abstract: surge 105 MA3X791
Text: Schottky Barrier Diodes SBD MA3X791 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Single Average forward current Single Unit VR 30 V VRRM 30 V IFM 300 mA Series*2 1.45
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MA3X791
O-236
SC-59
MA3X786s
DIODE M4A
surge 105
MA3X791
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MA3X786
Abstract: MA3X791 MA786 MA791
Text: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Repetitive peak reverse-voltage
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MA3X791
MA791)
SC-59
MA3X786
MA3X791
MA786
MA791
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2
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MA3X791
MA791)
MA3X786
MA786)
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DIODE M4A
Abstract: Panasonic super a series MA3X791 MA791
Text: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Single Average forward current Single Unit VR 30 V VRRM 30 V IFM 300 mA Series*2
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MA3X791
MA791)
O-236
SC-59
MA3X786s
DIODE M4A
Panasonic super a series
MA3X791
MA791
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DIODE M4A
Abstract: Panasonic super a series MA3X786 MA3X791 MA786 MA791
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ ue pl d in
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MA3X791
MA791)
MA3X786
MA786)
DIODE M4A
Panasonic super a series
MA3X786
MA3X791
MA786
MA791
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MA3X786
Abstract: MA3X791 MA786 MA791
Text: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Repetitive peak reverse-voltage
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MA3X791
MA791)
SC-59
MA3X786
MA3X791
MA786
MA791
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X786 (MA786) is contained in one package (series
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MA3X791
MA791)
MA3X786
MA786)
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DIODE M4A
Abstract: MA791 MA3X786 MA3X791 MA786
Text: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X786 (MA786) is contained in one package (double
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MA3X791
MA791)
MA3X786
MA786)
DIODE M4A
MA791
MA3X786
MA3X791
MA786
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MA3X786
Abstract: MA3X791 MA786 MA791
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ Th an
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MA3X791
MA791)
MA3X786
MA786)
MA3X786
MA3X791
MA786
MA791
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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k11 zener diode
Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
Text: Diodes Switching Diodes. K2 Switching Diodes . K2
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MA24D56
MA24D58
MA24D70
MA24D74
MA3D749
MA3D749A
MA3D750
MA3D750A
MA3D752
MA3D752A
k11 zener diode
zener diode k11
diode k6
MA3DD82
MA2B150
MA3DF40
MA3DF30
MA2B171
MA21D350
MA3df3
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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MA716
Abstract: MA7D50 ma741 MA10799
Text: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119 MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742
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MA10700)
MA10701)
MA10702)
MA10703)
MA10704)
MA10705)
MA10798)
MA10799)
MA4S713)
MA6S718)
MA716
MA7D50
ma741
MA10799
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Untitled
Abstract: No abstract text available
Text: Characteristics Quick Reference Guide • SBD for Power Electrical characteristics Ta = 25°C VRRM IF(AV) (V) (A) 30 30 Package Single-chip type VF max. (V) 20 5 0.47 MA3D798 10 3 0.47 MA3D799 TO-220D-B1 (2-pin) 1 40 45 5 50 3 1 TO-220D-A1 (3-pin) 0.55 3
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MA2D760
MA3D761
MA2D755
MA3D756
MA3D760
MA3U760
MA3D752
MA3D752A
MA3D755
MA3U755
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zener diode SMD marking code 27 4F
Abstract: smd diode schottky code marking 2F smd zener diode code 5F panasonic MSL level smd zener diode code a2 SMD ZENER DIODE a2 smd zener 27 2f SMD zener marking code 102 A2 SMD zener SMD MARK A1
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZDxxx Series Silicon planar type 0.60±0.05 0.20±0.05 Unit: mm For constant voltage, constant current, waveform clipper and surge absorption circuit 0.12+0.05 –0.02 2 • Absolute Maximum Ratings Ta = 25°C
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zener diode SMD marking code 27 4F
smd diode schottky code marking 2F
smd zener diode code 5F
panasonic MSL level
smd zener diode code a2
SMD ZENER DIODE a2
smd zener 27 2f
SMD zener marking code 102
A2 SMD
zener SMD MARK A1
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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MA3DF30
Abstract: MIP2F mip2fx MIP2KX PANASONIC SC107A IC 4026 internal structure MIP2K MA3DF46 ma3df46* ma3df30 MA2YD260G
Text: 2009 ver. 2 Diode Series %JPEF4FSJFT Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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