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    MA4AGBLP912 Price and Stock

    MACOM MA4AGBLP912

    RF DIODE PIN 50V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MA4AGBLP912 Tray 1,700 100
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    • 100 $5.5045
    • 1000 $5.4625
    • 10000 $5.4625
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    Mouser Electronics MA4AGBLP912 1,500
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    • 100 $7.5
    • 1000 $5.95
    • 10000 $5.95
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    Richardson RFPD MA4AGBLP912 500
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    • 100 -
    • 1000 $4.76
    • 10000 $4.76
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    MA4AGBLP912 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MA4AGBLP912 M/A-COM RF Switches, RF/IF and RFID, ALGAAS,BEAM LEAD,PIN,DIODE Original PDF
    MA4AGBLP912 Tyco Electronics AlGaAs Beam Lead PIN Diode Original PDF

    MA4AGBLP912 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA4AGBLP912

    Abstract: No abstract text available
    Text: MA4AGBLP912 AlGaAs Beamlead PIN Diode V4 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ Topside Low Series Resistance Low Capacitance 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL Silicon Nitride Passivation Polyimide Scratch Protection RoHS Compliant


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    PDF MA4AGBLP912 MA4AGBLP912

    beam lead PIN diode

    Abstract: No abstract text available
    Text: MA4AGBLP912 AlGaAs M/A-COM Products Rev. 2 RoHS Compliant Beamlead PIN Diode Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low Series Resistance Low Capacitance Millimeter Wave Switching & Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL


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    PDF MA4AGBLP912 MA4AGBLP912 beam lead PIN diode

    MA4AGBLP912

    Abstract: beam lead PIN diode Microwave PIN diode MA4AGBLP912 v3 diode AF103
    Text: MA4AGBLP912 AlGaAs Beamlead PIN Diode Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ V3 MA4AGBLP912 Low Series Resistance Low Capacitance Millimeter Wave Switching Millimeter Wave Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL


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    PDF MA4AGBLP912 MA4AGBLP912 beam lead PIN diode Microwave PIN diode MA4AGBLP912 v3 diode AF103

    Untitled

    Abstract: No abstract text available
    Text: MA4AGBLP912 AlGaAs Beamlead PIN Diode V4 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ Topside Low Series Resistance Low Capacitance 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL Silicon Nitride Passivation Polyimide Scratch Protection RoHS Compliant


    Original
    PDF MA4AGBLP912 MA4AGBLP912

    W-band diode

    Abstract: MA4AGBPL912 Microwave PIN diode MA4AGBLP912 beam lead pin diode MA4AGBLP912 M541 W-band PIN diode SPICE model pin diode model spice
    Text: MA4AGBLP912 AlGaAs Beam Lead PIN Diode Features n n n n n n n V 1.00 Outline Topview Ultra Low Capacitance < 22 fF Excellent RC Product < 0.10 pS High Switching Cutoff Frequency > 110 GHz 5 Nanosecond Switching Speed Driven by Standard +5 V TTL PIN Diode Driver


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    PDF MA4AGBLP912 MA4AGBLP912 pa300 MA4AGBPL912 0E-14 W-band diode Microwave PIN diode MA4AGBLP912 beam lead pin diode M541 W-band PIN diode SPICE model pin diode model spice

    MA4AGBLP912

    Abstract: PIN diodes 10GHZ
    Text: MA4AGBLP912 AlGaAs Beamlead PIN Diode RoHS Compliant Features • •       Low Series Resistance Low Capacitance Millimeter Wave Switching & Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL


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    PDF MA4AGBLP912 MA4AGBLP912 PIN diodes 10GHZ

    MA4AGBLP912

    Abstract: AF103 Microwave PIN diode MA4AGBLP912 beam lead pin diode M541 W-band diode 10ghz pin diode
    Text: MA4AGBLP912 AlGaAs Beamlead PIN Diode RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low Series Resistance Low Capacitance Millimeter Wave Switching & Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL Silicon Nitride Passivation


    Original
    PDF MA4AGBLP912 MA4AGBLP912 AF103 Microwave PIN diode MA4AGBLP912 beam lead pin diode M541 W-band diode 10ghz pin diode

    IS10E

    Abstract: Microwave PIN diode MA4AGBLP912 MA4AGBLP912 MA4AGBPL912
    Text: MA4AGBLP912 AlGaAs M/A-COM Products Rev. 2 RoHS Compliant Beamlead PIN Diode Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low Series Resistance Low Capacitance Millimeter Wave Switching & Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL


    Original
    PDF MA4AGBLP912 MA4AGBLP912 IS10E Microwave PIN diode MA4AGBLP912 MA4AGBPL912

    smr-3822

    Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
    Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM


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    PDF Jun08 smr-3822 x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter

    PH1819-60

    Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
    Text: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies


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    MAAM-008863

    Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
    Text: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America


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    PDF 40W267 MAAM-008863 MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer