UG3007
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR UG3001 thru UG3007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 3.0 Amperes ULTRA FAST GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Glass passivated chip Ultra fast switching for high efficiency Low reverse leakage current Low forward voltage drop
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UG3001
UG3007
DO-201AD
DO-201AD
UG3003
UG3004
UG3004
UG3007
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Untitled
Abstract: No abstract text available
Text: LTTH806L HYPER-FAST GLASS PASSIVATED RECTIFIER REVERSE VOLTAGE – 600Volts FORWARD CURRENT – 8.0 Ampere FEATURES TO-220AC • Soft, Hyper fast switching capability • Specially suited for critical mode Power Factor B Corrections. DIM. L M • High reliability and efficiency
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LTTH806L
600Volts
O-220AC
O-220AC
J-STD-020C
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mbr10120
Abstract: No abstract text available
Text: MBR20120CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 120 Volts – 20 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge¤t capability, low VF
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MBR20120CE
O-262AA
MIL-STD-202
mbr10120
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR UG1001 thru UG1007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Ampere ULTRA FAST GLASS PASSIVATED RECTIFIERS DO-41 FEATURES Glass passivated chip Ultra fast switching for high efficiency Low reverse leakage current Low forward voltage drop
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UG1001
UG1007
DO-41
DO-41
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Untitled
Abstract: No abstract text available
Text: FB220M~FB240M SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 2.0 Ampere FEATURES Mite Flat • Very low profile package – 0.80mm • High efficiency • Extremely fast switching • Negligible switching losses
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FB220M
FB240M
DO-222AA
DO-222AA
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marking code g1
Abstract: G1 TRANSISTOR SOT 23 PNP
Text: MMBT5551 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT5401 • ESD Capability: Machine Model, C (> 400 V) Human Body Model, 3A (4 to< 8 kV) MECHANICAL DATA • Case: SOT-23 Plastic
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MMBT5551
MMBT5401)
OT-23
2002/95/EC
marking code g1
G1 TRANSISTOR SOT 23 PNP
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Untitled
Abstract: No abstract text available
Text: SB120 thru SB140 REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 1.0 Amperes SCHOTTKY BARRIER RECTIFIERS FEATURES DO-41 • Metal-Semiconductor junction with guard ring • Epitaxial construction • Low forward voltage drop • High current capability
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SB120
SB140
DO-41
DO-41
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LT2MF
Abstract: DO222
Text: LITE-ON SEMICONDUCTOR SURFACE MOUNT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS LT2MF SERIES STAND-OFF VOLTAGE - 5.0 to 40 Volts POWER DISSIPATION - 200 WATTS FEATURES Mite Flat For surface mounted applications Reliable low cost construction utilizing molded plastic
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DO-222AA
LT2MF
DO222
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MBR20100CE
Abstract: No abstract text available
Text: MBR20100CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 100 Volts – 20 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge¤t capability, low VF
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MBR20100CE
O-262AA
MIL-STD-202
MBR20100CE
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GBU10V08
Abstract: GBU10V06
Text: GBU10V06 thru GBU10V08 REVERSE VOLTAGE – 600 to 800Volts FORWARD CURRENT – 10 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES GBU • Low forward voltage drop • Ideal for printed circuit board • High surge current capability • ESD Capability:
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GBU10V06
GBU10V08
800Volts
J-STD-020C
MIL-STD-202,
2002/95/EC
GBU10V08
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20SQ045
Abstract: solar cell 20SQ040
Text: 20SQ040~20SQ045 SCHOTTKY BARRIER RECTIFIERS For PV Solar Cell Bypass Protection REVERSE VOLTAGE – 40 to 45 Volts FORWARD CURRENT – 20 Amperes FEATURES R6 • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection
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20SQ040
20SQ045
20SQ045
solar cell
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B350
Abstract: No abstract text available
Text: B350 thru B360 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE – 50 to 60 Volts FORWARD CURRENT – 3.0 Amperes FEATURES • For surface mounted application SMC • Metal-Semiconductor junction with guard ring • Epitaxial construction SMC A • Very Low forward voltage drop
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5KE200A
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS 1.5KE SERIES REVERSE VOLTAGE - 6.8 to 440 Volts POWER DISSIPATION - 1500 WATTS DO-201 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit
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DO-201
5KE200A
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1N5819WL
Abstract: 1N5819W
Text: 1N5819WL REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 1.0 Ampere SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER FEATURES SOD-123 • Low Forward Voltage Drop • High Surge Capability and High Current Capability • For Surface Mounted Applications • High Conductance
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1N5819WL
OD-123
OD-123
J-STD-020D
1N5819WL
1N5819W
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FR1KA
Abstract: No abstract text available
Text: FR1AA thru FR1MA SURFACE MOUNT FAST RECOVERY RECTIFIER REVERSE VOLTAGE – 50 to 1000 Volts FORWARD CURRENT – 1.0 Ampere FEATURES SMA FLAT • Very low profile package – 0.9mm • Glass passivated chip • For surface mounted applications • Low reverse leakage current
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DO-221AC
FR1KA
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MBR10100CE
Abstract: No abstract text available
Text: MBR10100CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 100 Volts – 10 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge¤t capability, low VF
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MBR10100CE
O-262AA
MIL-STD-202
MBR10100CE
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kbj 1008G
Abstract: kbj 1006G 1008-G kbj1010g KBJ1004G KBJ1008G
Text: LITE-ON SEMICONDUCTOR KBJ1004G thru KBJ1010G REVERSE VOLTAGE - 400 to 1000 Volts FORWARD CURRENT - 10 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES Rating to 1000V PRV Ideal for printed circuit board Reliable low cost construction utilizing molded plastic
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KBJ1004G
KBJ1010G
E95060
kbj 1008G
kbj 1006G
1008-G
kbj1010g
KBJ1008G
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS 15KP SERIES REVERSE VOLTAGE - 17 to 200 Volts POWER DISSIPATION - 15000 WATTS R-6 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability
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1N4148
Abstract: 1n4148 trr diode 1n4148 specifications thermal diode 1n4148 information regarding diode 1N4148
Text: 1N4148 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 75 Volts FORWARD CURRENT – 0.15 Ampere FEATURES • Fast switching device Trr < 4.0 ns • DO-35 package (JEDEC) • Surface device type mounting • Through-hole device type mounting • Hermetically sealed glass
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1N4148
DO-35
DO-35
1N4148
1n4148 trr
diode 1n4148 specifications
thermal diode 1n4148
information regarding diode 1N4148
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Untitled
Abstract: No abstract text available
Text: SB350 thru SB360 SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE – 50 to 60 Volts FORWARD CURRENT – 3.0 Amperes FEATURES DO-201AD • Metal-Semiconductor junction with guard ring • Epitaxial construction • Low forward voltage drop • High current capability
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SB350
SB360
DO-201AD
DO-201AD
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LTTH1506D
Abstract: LTTH1506D model
Text: LTTH1506D REVERSE VOLTAGE – 600Volts FORWARD CURRENT – 15 Ampere HYPER-FAST GLASS PASSIVATED RECTIFIER FEATURES TO-220AC • Soft, Hyper fast switching capability • Specially suited for critical mode Power Factor B Corrections. DIM. L M • High reliability and efficiency
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LTTH1506D
600Volts
O-220AC
O-220AC
J-STD-020C
LTTH1506D
LTTH1506D model
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Untitled
Abstract: No abstract text available
Text: 4 TH IS DRAWING COPYRIGHT IS U N P U B L IS H E D . 3 RELEASED FOR PUBLICATION 2 SEP ,2 0 0 7 . R E V IS IO N S ALL RIGHTS RESERVED. 2007 By - LTR 66.8 ±0'05 D E S C R IP TIO N REVISED PER DATE E C R - 12 - 0 0 4 0 0 2 DWN APVD c.\ 0 1 MAR2012 ± 0 .0 5
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MAR2012
204POS
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 RELEASED FO R P U B L IC A T IO N SEP 2 ,2 0 0 7 . REVISIO N S ALL RIGHTS RESERVED. COPYRIGHT 2007 LTR D E S C R IP TIO N KK R +0.05 R EVISED PER DATE E C R - 12 - 0 0 4 0 0 2 1ATE AND APVD c.\ 0 1 MAR2012
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MAR2012
204POS
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2-2013289
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 2 RELEASED FO R ALL C O P Y R IG H T P U B L IC A T IO N R IG H TS SEP ,2 0 0 7 . REVISIO N S RESERVED. 2007 LTR D E S C R IP T IO N R EVISED PER DATE E C R - 12 - 0 0 4 0 0 2 DWN A PVD c.\ 0 1 MAR2012 ±0.05
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MAR2012
OUTLINE71
200EA
204POS
2-2013289
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