IRFZ12
Abstract: c409 diode LG 72A diode C407 C408 diode C409
Text: HE D I MAS5452 GOGflbSfl 3 | Data Sheet No. PD-9.440A INTERNATIONAL RECTIFIER T -tT - o f INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRFZ10 IRFZ1S l\l-Channel 5 0 Volt Power MOSFETs Product Summary 50 Volt, 0.2 Ohm HEXFET T0-220AB Plastic Package The H E XFET technology has expanded its product base to
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MAS5452
IRFZ10
T0-220AB
75BVn!
C-411
IRFZ12
C-412
c409 diode
LG 72A
diode C407
C408 diode
C409
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Untitled
Abstract: No abstract text available
Text: PD- 9.1577A International Rectifier IGR IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc=10MS, V c c = 720V , T j = 125°C,
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IRG4PH40KD
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IRFP460
Abstract: IRFP462 C558 c556 C555 C560 C557
Text: HE D | 4Û55M52 0GGÔÔÜ4 □ | Data Sheet No. PD-9.512A *r~ IN TER NAT IO NA L R E C T I F I E R INTERNATIONAL RECTIFIER Sf-s.tr IO R REPETITIVE AVALANCHE AND dv/dt RATED HEXFEFTRAIVISISTORS IRFP46S N-CHANNEL POWER MQSFETs TO-S47AC PACKAGE 500 Volt, 0.27 Ohm HEXFET
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O-S47AC
O-247AC
C-559
IRFP460,
IRFP462
T-39-15
C-560
IRFP460
C558
c556
C555
C560
C557
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Untitled
Abstract: No abstract text available
Text: MASS4S2 0015232 International la g Rectifier PD-9.842 IRFI9Z34G INTERNATIONAL RECTIFIER HEXFET P ow er M O S FE T • • • • • • • 5 m INR Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm P-Channel 175°C Operating Temperature
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IRFI9Z34G
1RF19Z34G
4A5S452
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JJS-100
Abstract: D0-205AC P-200A
Text: 4855452 INTERNATIONAL R E C T I F I E R 02E 07864 IO R l INTERNATIONAL RECTIFIER □H D G 3 ^ / ^ata Sr,eet NO. PL>"Z.U98 DE I MfiSSMSH 00D70b4 1 | R18CF, R18SF, R18CFR AND R18SFR SERIES 1600-1400 VOLTS RANGE REVERSE RECOVERY TIM E 1.25//S 100 AMP AVG STUD MOUNTED
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R18CF,
R18SF,
R18CFR
R18SFR
25//S
R1BCFR14A.
D0-205AC
D0-30)
D0-205AA
R18CF
JJS-100
D0-205AC
P-200A
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Untitled
Abstract: No abstract text available
Text: Bulletin 12776 rev. D 09/97 International I0 R Rectifier P400 SERIES PASSIVATED ASSEM BLED CIRCUIT ELEMENTS Features • Glass passivated junctions for greater reliability ■ Electrically Isolated base plate 40A ■ Available up to 1200 V RHM, VDRM ■ High dynamic characteristics
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E78996
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Untitled
Abstract: No abstract text available
Text: PD - 9.1262D International IÜR Rectifier IRF7603 HEXFET^ Power MOSFET • Generation V Technology • Ultra Low On-Resistance • N-Channel M O SFET • Very Small SO IC Package • Low Profile < 1.1 mm • Available in Tape & Reel • Fast Switching V d ss = 30 V
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1262D
IRF7603
4A5S455
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Untitled
Abstract: No abstract text available
Text: 4fiSS452 001522b bOl • INR International g j i Rectifier HEXFET Power MOSFET • • • • • • • PD-9.841 IR F I 9Z 24 G INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm P-Channel 175°C Operating Temperature
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4fiSS452
001522b
O-220
IRFI9Z24G
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