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    MB81C1002 Search Results

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    MB81C1002 Price and Stock

    FUJITSU Limited MB81C1002-10P

    Dynamic RAM, Static Column, 1M x 1, 18 Pin, Plastic, DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MB81C1002-10P 46
    • 1 $9
    • 10 $4.5
    • 100 $3.9
    • 1000 $3.9
    • 10000 $3.9
    Buy Now
    MB81C1002-10P 24
    • 1 $11.7
    • 10 $7.8
    • 100 $7.8
    • 1000 $7.8
    • 10000 $7.8
    Buy Now

    MB81C1002 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MB81C1002-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MB81C1002-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MB81C1002-15 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MB81C1002-70 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MB81C1002-80 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MB81C1002-85 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: FUJITSU IM MB85237-10 9 S CR AM MODULE X MB85237-12 TS029-A881 Jan. 1988 1,048,576 x 9 BIT DYNAMIC RANDOM ACCESS MEMORY MODULE The F u j i t s u MB85237 is a fully decoded, dynamic CMOS random access memory module with nine MB81C1002, in 26-pin SOJ p a c k a g e s , and nine .22yF decoupling capa­


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    PDF MB85237-10 MB85237-12 TS029-A881 MB85237 MB81C1002, 26-pin 30-pin 30-pad MB85237

    Untitled

    Abstract: No abstract text available
    Text: November 1989 Edition 1.1 FUJITSU DATASHEET MB81C1002-70/-80/-10/-12 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 1,048,576 X 1 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C1002 is CMOS fully decoded dynamic RAM organized as 1,048,576 words x 1


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    PDF MB81C1002-70/-80/-10/-12 MB81C1002 theMB81C1002 26-LEAD SOJ-26) LCC-26P-M04) C26054S-1C MB81C1002-70

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MB85237-10 IM X 9 SCRAM MODULE MB85237-12 1,048,576 x 9 BIT DYNAMIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85237 is a fully decoded, dynamic CMOS random access memory module with nine MB81C1002, in 26-pin SOJ packages, and nine .22uF decoupling capa­


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    PDF MB85237-10 MB85237-12 MB85237 MB81C1002, 26-pin 30-pin 30-pad MB81C1002

    T3A3

    Abstract: No abstract text available
    Text: November 1989 Edition 1.1 — = FUJITSU DATASHEET MB81C1002-70/-80/-10/-12 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 1,048,576 X 1 BIT Static Column Mode Dynamic RAM The Fujitsu M B81C 1002 is CMOS fuHy decoded dynamic RAM organized as 1,046,576 words x 1


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    PDF MB81C1002-70/-80/-10/-12 MB81C1002 theMB61C1002 MB81C1002-70 MB81C1002-80 MB81C1002-10 MB81C1002-12 26-LEAD SOJ-26) LCC-26P-M04) T3A3

    Static RAM fujitsu

    Abstract: MB81C1002A
    Text: October 1989 Edition 1.0 FUJITSU DATA SHEET MB81C1002A-60/-80/-10 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 1,048,576 X 1 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C1002A is CMOS fully decoded dynamic RAM organized as 1,048,576 words x


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    PDF MB81C1002A-60/-80/-10 MB81C1002A 1C1002A ZIP-20P-M02 Static RAM fujitsu

    Untitled

    Abstract: No abstract text available
    Text: October 1989 Edition 1.0 FUJITSU DATA S H E E T MB81C1002A-60/-80/-W C M O S 1,048,576 BIT STATIC COLUM N M O D E DYNAM IC RAM CMOS 1,048,576 X 1 BIT Static Column Mode Dynamic RAM The Fujitsu M B 8 1 C 1 0 0 2 A is C M O S fully decoded dynamic R A M organized a s 1,046,576 words x


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    PDF MB81C1002A-60/-80/-W

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


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    PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


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    PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    mcm511000

    Abstract: a 512 j MN41c1000 MN41C1000SJ-8 MCM511000A-10 MCM511000-85 MCM511000-10 MCM511000-12 MB81C1000-10 HCM511000
    Text: - 2041M CMOS X &KÌ08 m t, ít £ CC A TRAC max ns) TRCY min (ns) TCAD D y n a m i c •7 f- > '/ ft TAH TP (ns) (ns) min (ns) RAM ( 10 4 8 5 7 6 x î ) m ft TWCY rain TDH (ns) (ns) TRWC (ns) V D D or V C C (V) 13 P I N m I DD max (mA) À I DD STANDBY ( I SB/ I SB2)


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    PDF 71-Cyc/ms H5H4C1000P/J/L-15 H5M4C100Ã P/J/L-10 M5M4C1001P/J/L-12 MN41C1000L-8 MN41C1000SJ-10 MN41C1000SJ-8 MN41C1002-10 N41C1002-8 mcm511000 a 512 j MN41c1000 MCM511000A-10 MCM511000-85 MCM511000-10 MCM511000-12 MB81C1000-10 HCM511000

    fujltsu

    Abstract: MB81C1000-10 511000 mb81c1000-15 mb81c1003 MB81C1001-15
    Text: - 204- 1M CMOS X &KÌ08 m t, ít £ CC A Dynamic '/ ft ft RAM 1 0 4 8 5 7 6 x î ) •7 f- > TRAC max (ns) TRCY min (ns) TCAD TAH (ns) (ns) TP min (ns) TWCY rain (ns) m TDH TRWC V D D or V C C (ns) (ns) (V) 13 P I N 5 1 1 0 0 0 ft À f¡ [*typ] m m I DD


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    PDF 71-Cyc/ms H5H4C1000P/J/L-15 H5M4C100Ã P/J/L-10 M5M4C1001P/J/L-12 MBM81C1000A-80L MBM81C1001A-10 MBM81C1001A-10L MBM81C1001A-60 KBM81C1001A-501. fujltsu MB81C1000-10 511000 mb81c1000-15 mb81c1003 MB81C1001-15

    LCC 18 Pin Package

    Abstract: 26PIN 26-PIN MB81C466-10 20-PIN
    Text: Section 2 CMOS DRAMs — At a Glance Maximum Acc««« Tlm« n« Capacity Package Option« 262144 bits (262144wx 1b) 16-pin 18-pin Plastic Plastic DIP LCC 262144 bits (65536w x 4b) 18-pin 18-pin 20-pin 18-pin 18-pin 20-pin 26-pin Plastic Ceramic Plastic Plastic


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    PDF MB81C258-10 MB81C466-10 MB81C1000-70 MB81C1000A-60 MB81C1001-70 MB81C1001A-60 MB81C1002-70 MB81C1002A-60 MB81C4256-70 MB81C4256A-60 LCC 18 Pin Package 26PIN 26-PIN 20-PIN

    Untitled

    Abstract: No abstract text available
    Text: FU JITSU niCROELECTRftïSlCS FUJITSU 53E D • 37*H7h2 QD07433 S ■ MB85237-10 IM X 9 SCRAM MODULE MB85237-12 0048028901010101010101 1 , 0 4 8 , 5 7 6 x 9 B IT DYNAMIC RANDOM ACCESS MEMORY MODULE T A \ , - Z T > - \ 7 The Fujitsu MB85237 is a fully decoded, dynamic CMOS


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    PDF QD07433 MB85237-10 MB85237-12 MB85237 MB81C1002, 26-pin 30-pin 30-pad

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 MB81257 — S. Column KM41C258 TC51258


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    PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference