p77 cac
Abstract: MB85391A-60
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11209-1E MEMORY CMOS 4M x 32 FAST PAGE MODE DRAM MODULE MB85391A-60/-70 CMOS 4M × 32 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu MB85391A is a fully decoded, CMOS Dynamic Random Access Memory DRAM module consisting
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DS05-11209-1E
MB85391A-60/-70
MB85391A
MB8117400A
72-pad
F9704
p77 cac
MB85391A-60
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3654P
Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Text: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable
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16M-bit
64M-bit
68-pin)
88-pin)
MB98C81013-10
MB98C81123-10
MB98C81233-10
MB98C81333-10
3654P
DRAM 4464
jeida dram 88 pin
MB814260
4464 dram
1024M-bit
4464 64k dram
MB81G83222-008
mb814400a-70
4464 ram
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8117400
Abstract: No abstract text available
Text: Fujfrsu November 1993 Edition 2.0 DATA SHEET MB85390 / 85391-60/-70/-80 CMOS 4 M x 32 Fast Page Mode DRAM Module CMOS 4,194,304 x 32 Bit Fast Page Mode DRAM Module The Fujitsu MB85390 and MB85391 are fully decoded, CMOS dynamic random access memory DRAM modules consisting of eight MB8117400 devices. The
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MB85390
MB85391
MB8117400
MB85390and
8117400
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MB85391
Abstract: No abstract text available
Text: MEMORY — — i CMOS 4M x 32 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu MB85391A is a fully decoded, CMOS Dynamic Random Access Memory DRAM module consisting of eight MB8117400A devices. The MB85391A is optimized for those applications requiring high speed, high
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MB85391A
MB8117400A
72-pad
F9704
MB85391
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Untitled
Abstract: No abstract text available
Text: November 1993 Edition 2.0 FUJITSU DATA SHEET M B 8 5 3 9 0 / 8 5 3 9 1 -60/-70/-80 CMOS 4 M x 3 2 Fast Page Mode DRAM Module jim *1 CMOS 4,194,304 x 32 Bit Fast Page Mode DRAM Module The Fujitsu MB85390 and MB85391 are fully decoded, CMOS dynamic random access memory DRAM modules consisting of eight MB8117400 devices. The
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MB85390
MB85391
MB8117400
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128M-BIT
Abstract: 256-MBIT 128-MBIT
Text: DRAM Modules 1 • DRAM Modules - Normal Voltage Versions (CMOS) Vcc= +5V+10%, Ta=0°C to +70~C Organization (Wxb) 1Mx32 Mounted Device X number <Package> Operating Standby Mode (CMOS level} 60(15] 70(20] 2684 2376 44 72Pin SIMM 60(15] 70(20] 2904 2424 44
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MB814400C
MB814405C
72Pin
MB85341C-60
MB85341C-70
1Mx32
MB85343C-60
MB85343C-70
32M-bit
128M-BIT
256-MBIT
128-MBIT
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29F400TA
Abstract: FLC31SVC6S MB90P263 15E03L 81V4405C 29lv800ta MB3799 B566 MB47082 29LV800BA
Text: Index Page Document code Series Series Series Series Series 33 35 36 37 31 - CG51 Series D 5 C B Series D1 F1 Series F2 Series F3 Series 32 112 113 113 113 D S0 4 -2 3 1 1 1 -1 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E F4C Series (T1)
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MBM29F002T/B
29F002T/B-X
MBM29LV002T/B
29LV002T/B-X
29LV004B
29LV004T
29LV008B
29LV008T
29F016
29F016A
29F400TA
FLC31SVC6S
MB90P263
15E03L
81V4405C
29lv800ta
MB3799
B566
MB47082
29LV800BA
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