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    MB85R4002A Price and Stock

    KAGA FEI America Inc MB85R4002ANC-GE1

    IC FRAM 4MBIT PARALLEL 48TSOP
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    DigiKey MB85R4002ANC-GE1 Tray 634
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    FUJITSU Limited MB85R4002ANC-GE1

    Fram, 4Mbit, 120Ns, Tsop-48; Memory Type:Fram; Memory Size:4Mbit; Nvram Memory Configuration:256K X 16Bit; Ic Interface Type:Parallel; Access Time:120Ns; Memory Case Style:Tsop; No. Of Pins:48Pins; Supply Voltage Min:3V; Supply Rohs Compliant: Yes |Fujitsu MB85R4002ANC-GE1
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    Newark MB85R4002ANC-GE1 Bulk 1
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    FUJITSU Semiconductor Limited MB85R4002ANC-GE1

    NRND- 4Mbit FRAM with x16 parallel interface - TSOP48>> Please note that this part, MB85R4002ANC-GE1 is NRND. There is no EOL plan now but I think it will be eventually.We recommend to replace this wi
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    Symmetry Electronics MB85R4002ANC-GE1 128
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    FUJITSU Semiconductor Limited MB85R4002APFCN

    4Mbit FRAM x16 parallel TSOP48
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    Symmetry Electronics MB85R4002APFCN 1
    • 1 $29.93
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    MB85R4002A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MB85R4002ANC-GE1 Fujitsu Memory, Integrated Circuits (ICs), IC FRAM 4MBIT 150NS 48TSOP Original PDF

    MB85R4002A Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-0v01-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process


    Original     		PDF DS501-00006-0v01-E MB85R4002A MB85R4002A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-5v0-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process


    Original     		PDF DS501-00006-5v0-E MB85R4002A MB85R4002A

    JEDEC TRAY DIMENSIONS - TSOP48

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-3v0-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process


    Original     		PDF DS501-00006-3v0-E MB85R4002A MB85R4002A JEDEC TRAY DIMENSIONS - TSOP48

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-3v1-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process


    Original     		PDF DS501-00006-3v1-E MB85R4002A MB85R4002A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-3v1-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process


    Original     		PDF DS501-00006-3v1-E MB85R4002A MB85R4002A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-1v0-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process


    Original     		PDF DS501-00006-1v0-E MB85R4002A MB85R4002A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-4v0-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process


    Original     		PDF DS501-00006-4v0-E MB85R4002A MB85R4002A

    48-pin TSOP package tray

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-2v0-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process


    Original     		PDF DS501-00006-2v0-E MB85R4002A MB85R4002A 48-pin TSOP package tray

    FUJITSU FRAM

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00013-2v1-E FRAM MB85R4002A MB85R4002A is a 4M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00013-2v1-E MB85R4002A MB85R4002A 15mA5 I/O16 I/O15 I/O14 I/O13 I/O12 FUJITSU FRAM