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    Untitled

    Abstract: No abstract text available
    Text: MBD3057T54 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 400u Peak Curr. Tol. Total Cap. (F)600f Ip/Iv Min2.5 Vp Vv Fwd Volt @Ipeak110m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)12 Neg Resist. Semiconductor MaterialGermanium


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    PDF MBD3057T54 Ipeak110m

    back Tunnel diode

    Abstract: mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes
    Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized


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    PDF MIL-PRF-19500 MIL-PRF-35834 back Tunnel diode mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes

    MSPD2018

    Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
    Text: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800


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    PDF foc17091 MSPD2018 MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode

    MBD5057

    Abstract: No abstract text available
    Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized


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    PDF MIL-PRF-19500 MIL-PRF-35834 MBD5057

    MSPD2018

    Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345
    Text: Microwave Diodes Schottky Varactor PIN Step Recovery Planar Tunnel MOS / MIS Capacitors Short Form Catalog 2006 About Aeroflex / Metelics The Experience and Resources to Deliver the Technological Edge In many electronics applications, there is simply no margin for


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    PDF A17084 MSPD2018 m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345

    MBD3057-C18

    Abstract: MBD2057-C18 MBD-1057-C18 mbd1057-c18 MBD-2057-C18 back Tunnel diode mbd 1057 MBD-3057-C18 MBD-3057-H20 "back diode"
    Text: ISPMAR BACK TUNNEL DIODES Iflgl i Frequency Detector Series (To 18 GHz) metelics ID CORPORATION FEATURES • • • • • R u g g e d G e rm a n iu m P lanar Construction Excellent T e m p e ra tu re Stability N o D C Bias R eq uired W id e V id e o B andw idth


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    MBD3057-C18

    Abstract: MBD5057-C18 back Tunnel diode MBD-3057-C18 MIL-STD-195 MBD5057 MBD2057-C18 MBD-1057-C18 MBD1057
    Text: PLANAR BACK TUNNEL DIODES m T ^ High Frequency D e te c to r Series (To 18 GHz) IB = oti^ rationS FEATURES • Rugged Germanium Planar Construction • Excellent Temperature Stability • No DC Bias Required • Wide Video Bandwidth • MIL-STD-195 00 & 883 Capability


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    PDF MIL-STD-195 MBD-1057-C18 MBD-1057-T80 MBD-1057-T54 MBD-1057-H20 MBD-1057-E26 MBD-2057-C18 MBD-2057-T80 MBD-2057-T54temperature, MBD3057-C18 MBD5057-C18 back Tunnel diode MBD-3057-C18 MBD5057 MBD2057-C18 MBD1057

    MBD2057-C18

    Abstract: No abstract text available
    Text: FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & 883 Capability M A X IM U M RATINGS Storage Tem perature. -6 5 to +125°C Operating T e m p e ra tu re . -6 5 to +110°C


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    PDF MIL-STD-19500 MBD2057-C18

    MBD3057-C18

    Abstract: MBD2057-C18 DIODE e26 back Tunnel diode MBD1057
    Text: JMAR BACK TUNNEL DIODES m «|h Frequency Detector Series (To 18 GHz) U L = FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & 883 Capability M AXIM UM RATINGS


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    PDF MIL-STD-19500 MBD-1057-C18 MBD-1057-T80 MBD-1057-T54 MBD-1057-H20 MBD-1057-E26 MBD-2057-C18 MBD-2057-T80 MBD-2057-T54 MBD-2057-H20 MBD3057-C18 MBD2057-C18 DIODE e26 back Tunnel diode MBD1057

    MBD3057-C18

    Abstract: back Tunnel diode
    Text: PLANAR BACK TUNNEL DIODES IM ” High Frequency D e te cto r Series (To 18 GHz) [ P — o f I" cc?r to iw i ? n * FEATURES • • • • • R u g g e d G e rm a n iu m P la n a r C o n s tru c tio n E x c e lle n t T e m p e ra tu re S ta b ility N o D C Bias R e q u ire d


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