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    MBR1100S Datasheets (1)

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    MBR1100S Micro-Electro-Magnetical Tech 100 V, Schottky die Original PDF

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    MBR1100S

    Abstract: No abstract text available
    Text: MBR 1100S SCHOTTKY DIE SPECIFICATION TYPE: MBR1100S RSingle â–¡Dual Anode General Description: 100 V 1 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage


    Original
    PDF 1100S MBR1100S 62mil) MBR1100S

    MBR1100S

    Abstract: No abstract text available
    Text: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: MBR1100S Single Anode General Description: 100 V 1 A Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current


    Original
    PDF MBR1100S 14mil) MBR1100S