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    SMC Diode Solutions MBR160HW

    DIODE SCHOTTKY 60V 1A SOD123
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    DigiKey MBR160HW Reel 66,015 3,000
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    MBR160HW Cut Tape 66,015 1
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    Win Source Electronics MBR160HW 6,480
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    onsemi MBR160RLG

    DIODE SCHOTTKY 60V 1A AXIAL
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    DigiKey MBR160RLG Cut Tape 38,118 1
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    onsemi MBR160G

    DIODE SCHOTTKY 60V 1A AXIAL
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    DigiKey MBR160G Bulk 2,188 1
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    onsemi MBR160

    DIODE SCHOTTKY 60V 1A AXIAL
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    DigiKey MBR160 Bulk
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    onsemi MBR160RL

    DIODE SCHOTTKY 60V 1A AXIAL
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    MBR160 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBR160 EIC Semiconductor Schottky Barrier Rectifiers Original PDF
    MBR160 International Rectifier Schottky Rectifier Original PDF
    MBR160 International Rectifier Schottky Rectifier Original PDF
    MBR160 Motorola SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 50, 60 VOLTS Original PDF
    MBR160 On Semiconductor Axial Lead Rectifiers Original PDF
    MBR160 Microsemi Schottky Rectifier Scan PDF
    MBR160 Motorola Switchmode Datasheet Scan PDF
    MBR160 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MBR160 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Schottky Rectifier, 60V, 1A, Pkg Style Case 59-04 Scan PDF
    MBR160G On Semiconductor 1A 60V Schottky Rectifier Original PDF
    MBR160HWTR SMC Diode Solutions Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 60V 1A SOD123 Original PDF
    MBR160RL Motorola SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 50, 60 VOLTS Original PDF
    MBR160RL On Semiconductor 1A 60V Schottky Rectifier; Package: Axial Lead 5.20x2.70mm, 25.4x0.71mm Pkg, Lead len/dia; No of Pins: 2; Container: Tape and Reel; Qty per Container: 5000 Original PDF
    MBR160RL On Semiconductor 1A 60V Schottky Rectifier Package: Axial Lead Pins=2 Original PDF
    MBR160RL On Semiconductor Axial Lead Rectifier Original PDF
    MBR160RLG On Semiconductor 1A 60V Schottky Rectifier Original PDF
    MBR160TR International Rectifier 60V 1A Schottky Discrete Diode in a DO-204AL package Original PDF

    MBR160 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high


    Original
    PDF VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 2002/95/EC DO-204AL DO-41) 2011/65/EU 2002/95/EC.

    DO-204AL

    Abstract: MBR150 MBR160
    Text: MBR150, MBR160 Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance


    Original
    PDF MBR150, MBR160 DO-204AL MBR160 11-Mar-11 DO-204AL MBR150

    Untitled

    Abstract: No abstract text available
    Text: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high


    Original
    PDF VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 DO-204AL 2002/95/EC DO-41) 2002/95/EC. 2002/95/EC

    MBR150

    Abstract: No abstract text available
    Text: Bulletin PD-20589 rev. C 12/04 MBR150 MBR160 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/ Features The MBR150, MBR160 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching


    Original
    PDF PD-20589 MBR150 MBR160 MBR150, MBR160 08-Mar-07 MBR150

    Untitled

    Abstract: No abstract text available
    Text: BL GALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER MBR150- - -MBR160 VOLTAGE RANGE: 60 V CURRENT: 1.0 A FEATURES DO - 41 Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free


    Original
    PDF MBR150- -MBR160 DO--41 STD-202

    B150

    Abstract: B160 MBR150 MBR160
    Text: MOTOROLA Order this document by MBR150/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifiers MBR150 MBR160 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with


    Original
    PDF MBR150/D MBR150 MBR160 MBR160 B150 B160 MBR150

    Untitled

    Abstract: No abstract text available
    Text: MBR160HW SANGDEST MICROELECTRONICS SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0933, Rev. A Green Products MBR160HW SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: • • • • • • • • • Low Turn-on Voltage Fast Switching PN Junction Guard Ring Transient and ESD Protection


    Original
    PDF MBR160HW N0933, MBR160HW OD-123, MIL-STD-202xpressed

    Untitled

    Abstract: No abstract text available
    Text: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original
    PDF MBR150, MBR160 MBR160 MBR150/160 MBR150/D

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS MBR150-MBR160 1A SCHOTTKY RECTIFIER MAXIMUM RATINGS Rating Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified forward current 1 (VR(equiv) ≤ 0.2VR(dc), RӨJA = 80°C/W, PC board mounting, TA = 55°C)


    Original
    PDF MBR150-MBR160 MBR160 MBR150 MIL-PRF-19500,

    DO-204AL

    Abstract: MBR150 MBR160
    Text: MBR150, MBR160 Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance


    Original
    PDF MBR150, MBR160 DO-204AL MBR160 18-Jul-08 DO-204AL MBR150

    Untitled

    Abstract: No abstract text available
    Text: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original
    PDF MBR150, MBR160 MBR160 MBR150/160

    Untitled

    Abstract: No abstract text available
    Text: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high


    Original
    PDF VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 DO-204AL 2002/95/EC DO-41) 2011/65/EU 2002/95/EC.

    Untitled

    Abstract: No abstract text available
    Text: MBR150, MBR160 Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance


    Original
    PDF MBR150, MBR160 DO-204AL MBR160 11-Mar-11

    MBR150

    Abstract: DO-204AL MBR160
    Text: Bulletin PD-20589 rev. B 03/03 MBR150 MBR160 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/ Features Characteristics MBR150 MBR160 Units IF AV Rectangular 1.0 A 50/60 V Low profile, axial leaded outline IFSM @ tp = 5 µs sine 150


    Original
    PDF PD-20589 MBR150 MBR160 MBR150, MBR160 MBR150 DO-204AL

    B150

    Abstract: B160 MBR150 MBR150RL MBR160 MBR160RL
    Text: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap


    Original
    PDF MBR150, MBR160 MBR160 MBR150/D B150 B160 MBR150 MBR150RL MBR160RL

    MBR150

    Abstract: MBR160
    Text: MBR150 ~ MBR160 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 50 - 60 Volts IO : 1.0 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop Pb / RoHS Free


    Original
    PDF MBR150 MBR160 DO-41 UL94V-O MIL-STD-202, MBR150 MBR160

    Untitled

    Abstract: No abstract text available
    Text: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high


    Original
    PDF VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 2002/95/EC DO-204AL DO-41) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap


    Original
    PDF MBR150, MBR160 MBR160

    Untitled

    Abstract: No abstract text available
    Text: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original
    PDF MBR150, MBR160 MBR160 MBR150/160 MBR150/D

    Untitled

    Abstract: No abstract text available
    Text: MBR150/MBR160 Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline Cathode Anode • Very low forward voltage drop RoHS • High frequency operation COMPLIANT • High purity, high temperature epoxy encapsulation for


    Original
    PDF MBR150/MBR160 DO-204AL MBR150, MBR160 18-Jul-08

    1117T

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MBR150/D SEM ICONDUCTOR TECHNICAL DATA A x ia l Lead R ectifiers MBR150 MBR160 . . . em ploying the Schottky Barrier principle in a large area m etal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with


    OCR Scan
    PDF MBR150/D b3b72SS ------------------MBR150/D 1117T

    TE 2395 motorola

    Abstract: MBR16050CT motorola te 2395 mbr16050 te 2395 TRANSISTOR MBR16045CT MBR1603
    Text: M O T O R O L A SC D IO DES /OP TO Order this data sheet by MBR16035CT/D t 3 t 7 2 S S 00fll2ûE G 5SE D MOTOROLA T-Q3 - I3 _ SEMICONDUCTOR TECHNICAL DATA M BR16035CT M BR16045CT M BR16050CT Sw itchm ode Power Rectifiers Dual Schottky Power Rectifiers


    OCR Scan
    PDF 00fll2 MBR16035CT/D BR16035CT BR16045CT BR16050CT MBR16035CT MBR16045CT MBR16050CT TE 2395 motorola MBR16050CT motorola te 2395 mbr16050 te 2395 TRANSISTOR MBR16045CT MBR1603

    B150

    Abstract: B160 MBR150 MBR160
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR150 MBR160 A x ia l Lead R e ctifie rs . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


    OCR Scan
    PDF

    motorola diode cross reference

    Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
    Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3


    OCR Scan
    PDF 1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"