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    MBR600100CTR Search Results

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    MBR600100CTR Price and Stock

    GeneSic Semiconductor Inc MBR600100CTR

    DIODE MOD SCHOT 100V 300A 2TOWER
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    DigiKey MBR600100CTR Bulk 80
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    Mouser Electronics MBR600100CTR
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    • 100 $107.86
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    NAC MBR600100CTR 25
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    • 100 $126.83
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    Navitas Semiconductor MBR600100CTR

    Silicon Rectifier Module - Schottky (Rev Config) - 100V - 600A - Twin Tower
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    Onlinecomponents.com MBR600100CTR
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    • 100 $110.43
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    MBR600100CTR Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBR600100CTR GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 100V 600A 2TOWER Original PDF

    MBR600100CTR Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MBR60045CT thru MBR600100CTR Silicon Power Schottky Diode VRRM = 45 V - 100 V IF AV = 600 A Features • High Surge Capability • Types from 45 V to 100 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)


    Original     		PDF MBR60045CT MBR600100CTR MBR60060CT MBR60080CT MBR600100CT

    Untitled

    Abstract: No abstract text available
    Text: MBR60045CT thru MBR600100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 600 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MBR60045CT MBR600100CTR MBR60045CT MBR60060CT MBR60080CT MBR600100CT

    Untitled

    Abstract: No abstract text available
    Text: MBR60045CT thru MBR600100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 600 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MBR60045CT MBR600100CTR MBR60045CT MBR60060CT MBR60080CT MBR600100CT

    MBR60045CT

    Abstract: No abstract text available
    Text: Naina Semiconductor Ltd. MBR60045CT thru MBR600100CTR Silicon Schottky Diode, 600A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified


    Original     		PDF MBR60045CT MBR600100CTR MBR60045CT MBR60060CT MBR60080CT MBR600100C