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    MCM54400AN Search Results

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    MCM54400AN Price and Stock

    Motorola Semiconductor Products MCM54400AN80

    FAST PAGE DRAM, 1MX4, 80NS, CMOS, PDSO20
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MCM54400AN80 52
    • 1 $10.5
    • 10 $10.5
    • 100 $6.475
    • 1000 $6.475
    • 10000 $6.475
    Buy Now
    MCM54400AN80 22
    • 1 $10.5
    • 10 $5.25
    • 100 $5.25
    • 1000 $5.25
    • 10000 $5.25
    Buy Now

    Motorola Semiconductor Products MCM54400AN60

    Dynamic RAM, Fast Page, 1M x 4, 26 Pin, Plastic, SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MCM54400AN60 38
    • 1 $6
    • 10 $4.4
    • 100 $4
    • 1000 $4
    • 10000 $4
    Buy Now
    MCM54400AN60 6
    • 1 $6
    • 10 $3
    • 100 $3
    • 1000 $3
    • 10000 $3
    Buy Now

    MCM54400AN Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MCM54400AN60 Motorola DRAM Original PDF
    MCM54400AN70 Motorola DRAM Original PDF
    MCM54400AN80 Motorola DRAM Original PDF
    MCM54400ANC70 Motorola DRAM Original PDF
    MCM54400ANC80 Motorola DRAM Original PDF
    MCM54400ANV80 Motorola DRAM Original PDF

    MCM54400AN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5Bp power control

    Abstract: Motorola CMOS Dynamic RAM 2m x 8 Nippon capacitors
    Text: MOTOROLA Order this document by MCM36204/D SEMICONDUCTOR TECHNICAL DATA MCM36204 2M x 36 Bit ECC Dynamic Random Access Memory Module for Error Correction Applications The MCM36204 is a 72M dynamic random access memory DRAM module organized as 2,097,152 x 36 bits. The module is a double-sided 72-lead single-inline memory module (SIMM) consisting of eighteen MCM54400AN DRAMs


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    PDF MCM36204/D MCM36204 MCM36204 72-lead MCM54400AN MCM36204/D* 5Bp power control Motorola CMOS Dynamic RAM 2m x 8 Nippon capacitors

    MCM81430

    Abstract: MCM81430S70 5Bp power control 30 pin simm memory dynamic MCM81430S60 Nippon capacitors
    Text: MOTOROLA Order this document by MCM81430/D SEMICONDUCTOR TECHNICAL DATA MCM81430 1M x 8 Bit Dynamic Random Access Module S PACKAGE SIMM MODULE CASE 839A-01 The MCM81430 is an 8M dynamic random access memory DRAM module organized as 1,048,576 x 8 bits. The module is a 30-lead single-in-line memory module (SIMM) consisting of two MCM54400AN DRAMs housed in a 20/26 J-lead small


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    PDF MCM81430/D MCM81430 39A-01 MCM81430 30-lead MCM54400AN MCM81430/D* MCM81430S70 5Bp power control 30 pin simm memory dynamic MCM81430S60 Nippon capacitors

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original
    PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    MCM32130SH70

    Abstract: simm 72 dram Nippon capacitors MCM32130-70
    Text: MOTOROLA Order this document by MCM32130/D SEMICONDUCTOR TECHNICAL DATA MCM32130 MCM32T100 1M x 32 Bit Dynamic Random Access Memory Module The MCM32130 is a 32M dynamic random access memory DRAM module organized as 1,048,576 x 32 bits. The module is a 72–lead single–in–line memory


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    PDF MCM32130/D MCM32130 MCM32T100 MCM32130 MCM54400AN MCM32130/D* MCM32130SH70 simm 72 dram Nippon capacitors MCM32130-70

    simm 72 dram

    Abstract: Nippon capacitors
    Text: MOTOROLA Order this document by MCM36104/D SEMICONDUCTOR TECHNICAL DATA MCM36104 1M x 36 Bit ECC Dynamic Random Access Memory Module for Error Correction Applications The MCM36104 is a 36M dynamic random access memory DRAM module organized as 1,048,576 x 36 bits. The module is a 72-lead single-in-line memory


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    PDF MCM36104/D MCM36104 MCM36104 72-lead MCM54400AN MCM36104/D* simm 72 dram Nippon capacitors

    MCM40100

    Abstract: Nippon capacitors
    Text: MOTOROLA Order this document by MCM40100/D SEMICONDUCTOR TECHNICAL DATA MCM40100 1M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The MCM40100 is a 40M dynamic random access memory DRAM modules organized as 1,048,576 x 40 bits. The module is a 72–lead single–in–line


    Original
    PDF MCM40100/D MCM40100 MCM40100 MCM54400AN MCM40100/D* Nippon capacitors

    MCM40200

    Abstract: Nippon capacitors
    Text: MOTOROLA Order this document by MCM40200/D SEMICONDUCTOR TECHNICAL DATA MCM40200 2M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The MCM40200 is an 80M dynamic random access memory DRAM module organized as 2,097,152 x 40 bits. The module is a double–sided 72–lead


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    PDF MCM40200/D MCM40200 MCM40200 MCM54400AN MCM54400AN MCM40200/D* Nippon capacitors

    MCM91430S

    Abstract: motorola 30-pin simm memory dynamic 30-pin simm memory
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91430 1M x 9 Bit Dynamic Random Access Memory Module The MCM91430 is a 9M dynamic random access memory DRAM module orga­ nized as 1,048,576 x 9 bits. The module is a 30-lead single -in-line memory module (SIMM) consisting of two MCM54400AN and one 1M DRAM housed in a 20/26 J lead small outline package (SOJ) and mounted on a substrate along with a 0.22 pF


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    PDF MCM91430 30-lead MCM54400AN MCM91430S motorola 30-pin simm memory dynamic 30-pin simm memory

    TCA 3189

    Abstract: MCM81430S
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 1Mx8 Bit Dynamic Random Access Module MCM81430 MCM8L1430 The MCMB1430 and MCM8L1430 are 8M dynamic random access memory DRAM modules organized as 1,048,576 x 8 bits. The modules are 30-lead single-in-line memory modules (SIMM) consisting of two MCM54400AN DRAMs


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    PDF MCM81430 MCM8L1430 MCMB1430 MCM8L1430 30-lead MCM54400AN 8L1430 TCA 3189 MCM81430S

    MCM81430S80

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 8 Bit Dynamic Random Access Module MCM81430 MCM8L1430 The MCM81430 and MCM8L1430 are 8M dynamic random access memory DRAM modules organized as 1,048,576 x 8 bits. The modules are 30-lead singlein-line memory modules (SIMM) consisting of two MCM54400AN DRAMs housed in


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    PDF MCM81430 MCM8L1430 30-lead MCM54400AN 8L1430 MCM81430S6Û MCM81430S70 MCM81430S80 MCM8L1430S60

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91430 1M x 9 Bit Dynamic Random Access Memory Module The MCM91430 is a 9M dynamic random access memory DRAM module orga­ nized as 1,048,576 x 9 bits. The module is a 30-lead single-in-line memory module (SIMM) consisting of two MCM54400AN and one 1M DRAM housed in a 20/26 J-lead


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    PDF MCM91430 30-lead MCM54400AN 91430L60 91430L70 91430SC60 91430SC70 91430S60

    Untitled

    Abstract: No abstract text available
    Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA MCM81430 1M x 8 Bit Dynamic Random Access Module The MCM81430 is an 8M dynamic random access memory DRAM module or­ ganized as 1,048,576 x 8 bits. The module is a 30-lead single-in-line memory mod­ ule (SIMM) consisting of two MCM54400AN DRAMs housed in a 20/26 J-lead small


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    PDF MCM81430 30-lead MCM54400AN MCM81430S60 MCM61430S70 MCM81430L60 MCM81430L70

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM81430 1M x 8 Bit Dynamic Random Access Module The MCM81430 is an 8M dynamic random access memory DRAM module or­ ganized as 1,048,576 x 8 bits. The module is a 30-lead s in gle -in-line memory module (SIMM) consisting of two MCM54400AN DRAMs housed in a 20/26 J-lea d


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    PDF MCM81430 30-lead MCM54400AN 81430S60 81430S 81430L60 81430L70

    32130S

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM32130 1M x 32 Bit Dynamic Random Access Memory Module The MCM32130 is a 32M dynamic random access memory DRAM module organized as 1,048,576 x 32 bits. The module is a 72-lead single-in-line memory module (SIMM) consisting of eight MCM54400AN DRAMs housed in standard 300


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    PDF MCM32130 72-lead MCM54400AN 32130S

    ic nn 5198 k

    Abstract: nn 5198 k mcm54400
    Text: M OTOROLA SEMICONDUCTOR -TECHNICAL DATA 1M x 36 Bit ECC Dynamic Random Access Memory Module MCM36104 for Error Correction Applications The MCM36104 is a 36M dynamic random access memory DRAM module organized as 1,048,576 x 36 bits. The module is a 72-lead single-in-line memory


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    PDF MCM36104 72-lead MCM54400AN MCM36200 ic nn 5198 k nn 5198 k mcm54400

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM40200 2M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The MCM40200 is an SOM dynamic random access memory DRAM module organized as 2,097,152 x 40 bits. The module is a double-sided 72-lead


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    PDF MCM40200 72-lead MCM54400AN MCM40200AS60 MCM40200AS70 MCM40200ASG60 MCM40200ASG70

    MCM54400A-C

    Abstract: mcm54400az M5440 M54400
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-C Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40°C to + 85°C The MCM54400A is a 0.7p CM OS high-speed, dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate pro­


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    PDF MCM54400A-C MCM54400A 300-mil 100-mil 4400A MCM54400ANJ70 MCM54400A-C mcm54400az M5440 M54400

    32130S

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICO ND U C TO R TECHNICAL DATA MCM32130 MCM32L130 1M x 32 Bit Dynamic Random Access Memory Module The MCM 32130S is a 32M, dynam ic random access memory DRAM module organized as 1,048,576 x 32 bits. The module is a 72-lead single-in-line memory


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    PDF 32130S 72-lead MCM54400AN 300-m MCM32100SH70 MCM32100SH80 MCM32100SH10 MCM32L100SH70 MCM32L100SH80

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 36 Bit ECC Dynamic Random Access Memory Module MCM36104 for Error Correction Applications The MCM36104 is a 36M dynamic random access memory DRAM module organized as 1,048,576 x 36 bits. The module is a 72-lead s in gle -in-line


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    PDF MCM36104 72-lead MCM54400AN 36104S60 36104S70 36104SG

    MCM54400AZ60

    Abstract: mcm54400a MCM54400A-70 mcm54400az MCM5L4400AZ60 MCM5L4400A-70 mcm54400 MCM54400AN60
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A MCM5L4400A 1M x 4 CMOS Dynamic RAM Fast Page Mode The M C M 54400A is a 0 .7 ji CM OS high-speed dynam ic random access memory. It is organized as 1,048,576 four-bit w ords and fabricated with CMOS silicon-gate process


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    PDF 4400A MCM54400AN60 MCM54400AN70 MCM54400AN80 MCM5L4400AN60 MCM5L4400AN70 MCM5L4400AN80 MCM54400AN60R2 MCM54400AN70R2 MCM54400AZ60 mcm54400a MCM54400A-70 mcm54400az MCM5L4400AZ60 MCM5L4400A-70 mcm54400

    4116 Dram

    Abstract: 32T200
    Text: MOTOROLA SEMICONDUCTOR -TECHNICAL DATA MCM32230 MCM32T200 2M x 32 Bit Dynamic Random Access Memory Module The MCM32230 is a 64M dynamic random access memory DRAM module organized as 2,097,152 x 32 bits. The module is a 72-lead double sided single­


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    PDF MCM32230 72-lead MCM54400AN 32T200 32T200SH MCM32T200 4116 Dram 32T200

    SC63594FN

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MCM72100 Product Preview 1M x 72 Bit Dynamic Random Access Memory Module TOP VIEW The MCM72100 is a dynamic random access memory DRAM module organized as 1,048,576 x 72 bits. The module is a 100-lead single-in-line memory module


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    PDF MCM72100 MCM72100 100-lead MCM54400AN SC63594FN 20-lead 10-bit dri21

    32L230

    Abstract: mcm54400
    Text: MOTOROLA wm SEM ICONDUCTOR TECHNICAL DATA MCM32230 MCM32L230 2M x 32 Bit Dynamic Random Access Memory Module The MCM32230S is a 64M, dynamic random access memory DRAM module organized as 2,097,152 x 32 bits. The module is a 72-lead double sided single-in-line


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    PDF MCM32230 MCM32L230 MCM32230S 72-lead MCM54400AN 300-mil-wide MCM32230SH70 MCM32230SH80 MCM32230SH10 32L230 mcm54400

    MCM54400AZ70

    Abstract: MCM54400AN70 MCM54400AZ80 MCM54400A-C MCM54400AN80 MCM54400A-C70 313X0
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-C Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40°C to + 85°C The M C M 54400A is a 0 .7 fi C M OS high-speed dynam ic random access memory. It is organized as 1,048,576 four-bit w ords and fabricated with C M OS silicon-gate process


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    PDF MCM54400A-C 4400A MOTOD010 MCM54400A-C --------------544Q0A-C MCM54400AN70 MCM54400AN80 MCM54400AN70R2 MCM54400AZ70 MCM54400AZ80 MCM54400AN80 MCM54400A-C70 313X0