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    mdd9754

    Abstract: N-P Channel mosfet MDD-9754
    Text: MDD9754 Product Flyer MagnaChip Imaging Solutions Division Dual Enhancement N-P Channel Trench MOSFET Key Features N-Channel ƒ VDS = 40V ƒ ID=16A VGS=10V ƒ RDS(ON) <27mΩ @ VGS = 10V <35mΩ @ VGS = 4.5V p-channel ƒ VDS = -40V ƒ ID=-12.7A(VGS=10V) ƒ RDS(ON)


    Original     		MDD9754 MDD9754 2008MagnaChip N-P Channel mosfet MDD-9754 PDF

    MDD9754

    Abstract: MDD9754RH MDD-9754
    Text: Dual Enhancement N-P Channel Trench MOSFET General Description Features The MDD9754 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability. Low RDS ON , low gate charge can be offering superior


    Original     		MDD9754 MDD9754­ MDD9754RH MDD-9754 PDF

    MDD9754

    Abstract: MDD-9754
    Text: Preliminary – Subject to change without notice Dual Enhancement N-P Channel Trench MOSFET General Description Features The MDD9754 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability


    Original     		MDD9754 MDD9754â MDD-9754 PDF