MDS110 Search Results

mds1660

Abstract: 50X50 MDS12 MDS110
Contextual Info: Formosa MS SMD Schottky Bridge Rectifier MDS12 THRU MDS110 List List. 1 Package outline. 2

MDS1100

Abstract: J162 transistor j237
Contextual Info: MDS1100 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization

Contextual Info: Formosa MS SMD Low VF Schottky Bridge Rectifier MDS12L THRU MDS110L List List. 1 Package outline. 2

Contextual Info: Formosa MS SMD Low VF Schottky Bridge Rectifier MDS12L THRU MDS110L List List. 1 Package outline. 2

Contextual Info: MDS1100 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization

Contextual Info: Formosa MS SMD Schottky Bridge Rectifier MDS12L THRU MDS110L List List. 1 Package outline. 2

Contextual Info: Formosa MS SMD Schottky Bridge Rectifier MDS12 THRU MDS110 List List. 1 Package outline. 2

Contextual Info: Formosa MS SMD Schottky Bridge Rectifier MDS12 THRU MDS110 List List. 1 Package outline. 2

MDS110L

Abstract: TO-269AA SCHOTTKY BARRIER BRIDGE RECTIFIERS MDS14L for bridge rectifier MDS12L MDS12 MDS16L
Contextual Info: Formosa MS SMD Schottky Bridge Rectifier MDS12L THRU MDS110L List List. 1 Package outline. 2

Contextual Info: Formosa MS SMD Schottky Bridge Rectifier MDS12 THRU MDS110 List List. 1 Package outline. 2

1030 mhz

Abstract: MDS1100 1030 PULSED
Contextual Info: MDS1100 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization

Contextual Info: Formosa MS SMD Schottky Bridge Rectifier MDS12 THRU MDS110 List List. 1 Package outline. 2

transistor j237

Abstract: MDS1100
Contextual Info: MDS1100 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization

Contextual Info: MDS110 Naina Semiconductor Ltd. Three Phase Bridge Rectifier, 110 Amps Features • • • Easy connections Excellent power volume ratio Insulated type MDS Voltage Ratings TJ = 25oC unless otherwise noted Type number Voltage code MDS110 80 100 120 140 160

TO269AA

Abstract: MARKING CODE SMD BH
Contextual Info: COMCHIP Low VF Schottky Bridge Rectifiers SMD Diodes Specialist CDBHD120L-G Thru. CDBHD1100L-G Reverse Voltage: 20 to 100 Volts Forward Current: 1.0 Amp RoHS Device Features • Low Vf Schottky barrier chips in bridge Mini DIP/To-269AA • Metal-Semiconductor junction with guard ring

MDS110L

Abstract: BRIDGE RECTIFIER SMD SCHOTTKY BARRIER BRIDGE RECTIFIERS
Contextual Info: Formosa MS SMD Schottky Bridge Rectifier MDLS12L THRU MDLS110L List List. 1 Package outline. 2

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

Contextual Info: Low VF Schottky Bridge Rectifiers CDBHD120L-G Thru. CDBHD1100L-G Reverse Voltage: 20 to 100 Volts Forward Current: 1.0 Amp RoHS Device Features Mini DIP/To-269AA - Low Vf Schottky barrier chips in bridge - Metal-Semiconductor junction with guard ring .106 2.7

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

Contextual Info: Low VF Schottky Bridge Rectifiers CDBHD120L-G Thru. CDBHD1100L-G Reverse Voltage: 20 to 100 Volts Forward Current: 1.0 Amp RoHS Device Features TO-269AA - Low Vf Schottky barrier chips in bridge - Metal-Semiconductor junction with guard ring ~ - High surge current capability