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    Abstract: No abstract text available
    Text: MECGaNX27 8.5 to 10.2 GHz GaN HEMT Power Amplifier Main Features • 0.25µm GaN HEMT Technology • 8.5 – 10.2 GHz full performances Frequency Range  27W Output Power @ Pin 27 dBm  36% PAE @ Pin 27 dBm  24 dB Small Signal Gain  Bias: Vd = 30V, Id = 1A, Vg = -2.85V


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