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    MG200Q1ZS11 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MG200Q1ZS11 Toshiba GTR Module Silicon N Channel IGBT Original PDF
    MG200Q1ZS11 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF

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    MG200Q1ZS11

    Abstract: No abstract text available
    Text: MG200Q1ZS11 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS11 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 1.0µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.)


    Original     		PDF MG200Q1ZS11 2-109B5A MG200Q1ZS11

    ss125c

    Abstract: No abstract text available
    Text: TOSHIBA MG200Q1ZS11 MG2 0 0 Q 1 Z S 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=1.0,«s Max. trr = 0.5/us (Max.) Low Saturation Voltage : V c e (sat) = 2.7V (Max.)


    OCR Scan     		PDF MG200Q1ZS11 sS125 ss125c

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG200Q1ZS11 MG200Q1ZS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=1.0,«s Max. trr = 0.5^s (Max.) Low Saturation Voltage •


    OCR Scan     		PDF MG200Q1ZS11 2-109B5A

    HT 4906

    Abstract: diode 3a05 MG200Q1ZS11 3A05 diode
    Text: TOSHIBA M G200Q1ZS11 MG2 0 0 Q 1 Z S 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • High Input Impedance High Speed : tf=l. Vs(M ax. trr = 0.5^8 (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG200Q1ZS11 MG200Q1 2-109B5A HT 4906 diode 3a05 MG200Q1ZS11 3A05 diode