ID600A
Abstract: No abstract text available
Text: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB
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MGF1952A
MGF1952A
17dBm
12GHz
000pcs/reel
ID600A
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mitsubishi microwave
Abstract: MGF1952A
Text: June /2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1952A Microwave Power MES FET Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF1952A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses.
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MGF1952A
MGF1952A
17dBm
12GHz
3000pcs
mitsubishi microwave
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Untitled
Abstract: No abstract text available
Text: June /2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1952A Microwave Power MES FET Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF1952A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses.
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Original
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PDF
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MGF1952A
MGF1952A
17dBm
12GHz
3000pcs
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k MESFET S parameter
Abstract: MGF1952A-01 MGF1952A
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1952A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1952A is a 50mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power
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MGF1952A
MGF1952A
17dBm
12GHz
MGF1952A-01
k MESFET S parameter
MGF1952A-01
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Untitled
Abstract: No abstract text available
Text: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB
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Original
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PDF
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MGF1952A
MGF1952A
17dBm
12GHz
000pcs/reel
|
Untitled
Abstract: No abstract text available
Text: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB
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Original
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PDF
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MGF1952A
MGF1952A
17dBm
12GHz
000pcs/reel
|
MGF1952A
Abstract: No abstract text available
Text: October /2003 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1952A Microwave Power MES FET Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF1952A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses.
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Original
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PDF
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MGF1952A
MGF1952A
17dBm
12GHz
3000pcs
Cha14
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MGFS45H2201G
Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety
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H-CR587-J
KI-0612
MGFS45H2201G
MGFS40H2201G
MGF0909A
sirio
mgfc36v-a
QVC12
MGF1907A
MGF4961
mgf4941al
mitsubishi mgf
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gaas fet marking B
Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source
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QL-1104E-A
July/2008)
GD-26,
MGF4951A/52A
MGF4953A/54A
MGF1951A
MGF1952A
MGF1953A
MGF1954A
MGF4851A
gaas fet marking B
gaas fet micro-X Package marking
gaas fet marking a
marking K gaas fet
MGF1961A
gaas fet micro-X Package
gaas fet marking J
MGF1964A
MGF1963A
Micro-X marking "K"
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