GD-30
Abstract: InGaAs HEMT mitsubishi
Text: May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.
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May/2008
MGF4934AM/BM
MGF4934BM
12GHz
GD-30
InGaAs HEMT mitsubishi
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4934BM 4pin flat lead package DESCRIPTION The MGF4934BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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Original
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PDF
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MGF4934BM
MGF4934BM
12GHz
MGF4934BM-75
15000pcs/reel
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4934BM 4pin flat lead package DESCRIPTION The MGF4934BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
|
Original
|
PDF
|
MGF4934BM
MGF4934BM
12GHz
MGF4934BM-75
15000pcs/reel
|
Untitled
Abstract: No abstract text available
Text: Dec./2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.
|
Original
|
PDF
|
MGF4934AM/BM
MGF4934BM
12GHz
3000pcs/reel
|