340 mmic
Abstract: MGFC5211
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5211 Notice : This is not a final specification Some parametric limits are subject to change. K-Band 2-Stage Power Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5211 is a GaAs MMIC chip especially designed for 21.2 ~ 23.6 GHz band High
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MGFC5211
MGFC5211
340 mmic
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGFC5211 K-Band 2-Stage Power Amplifier Target Specifications ELECTRICAL CHARACTERISTICS Ta=25 Degree C. Symbol IDSS1 IDSS2 Vp1 Vp2 Parameter Test Conditions Drain Saturation Current Vd=3.0V Drain Saturation Current Pinch Off Voltage
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MGFC5211
180mA*
20dBm
Ids211
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5211 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5211 is a GaAs MMIC chip especially designed for 21.2 ~ 23.6 GHz band High
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MGFC5211
MGFC5211
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