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    HBT 01 05

    Abstract: No abstract text available
    Text: Mitsubishi Semiconductors MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •


    Original
    PDF MGFS38E3336-01 MGFS38E3336 64QAM, IEEE802 16e-2005 0120sec HBT 01 05

    Untitled

    Abstract: No abstract text available
    Text: Mitsubishi Semiconductors MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •


    Original
    PDF MGFS38E3336-01 MGFS38E3336 64QAM, IEEE802 16e-2005

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original
    PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1