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    MGM5N45 Search Results

    MGM5N45 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGM5N45 Motorola N-CHANNEL ENHANCEMENT MODE SILICON GATE, GAIN ENHANCED MOS FIELD EFFECT TRANSISTOR Original PDF
    MGM5N45 Motorola Switchmode Datasheet Scan PDF
    MGM5N45 Motorola European Master Selection Guide 1986 Scan PDF
    MGM5N45 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    MGM5N45 Datasheets Context Search

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    MGM5N45

    Abstract: MGM5N50 MGP5N45 MGP5N50
    Text: MGM5N45 MGM5N50 MGP5N45 MGP5N50 N-CHANNEL ENHANCEMENT MODE SILICON GATE, GAIN ENHANCED MOS FIELD EFFECT TRANSISTOR These GEMFETS are designed for high voltage, high current power controls such as line operated motor controls and converters. o High Input Impedance


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    PDF MGM5N45 MGM5N50 MGP5N45 MGP5N50 O-204AA 1092BSC 546BSC MGM5N45 MGM5N50 MGP5N45 MGP5N50

    5n50 mosfet

    Abstract: 5n50 transistor 5N50
    Text: MOTOROLA MGM5N45 MGM5N50 MGP5N45 MGP5N50 SEM ICONDUCTOR TECHNICAL DATA D esigner’s D ata Sheet 5.0 AMPERE N-CHANNEL TM OS GEM FET N-CHANNEL ENHANCEMENT-MODE SILICON GATE, INSULATED GATE BIPOLAR TRANSISTOR rCE on = 1 6 Ohm 450 and 500 Volts These GEMFETS are designed fo r high voltage, h igh cu rren t


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    PDF MGM5N45 MGM5N50 MGP5N45 MGP5N50 MGM5N50 5n50 mosfet 5n50 transistor 5N50

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    1RFZ40

    Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
    Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained


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    PDF DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


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    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    MTE65N12 MOSFETs

    Abstract: MTE65N12 MTE100N05 MTE60N20 MTE75N10 MTE65N15 MTE20N55 MTE30N40 to-204aa MTE20N60
    Text: POWER TRANSISTORS — TMOS METAL continued Energy Management Series TMOS Power MOSFETs D Pd = 250 W Mounting base is connected to the drain. rOS(on) @ Id iD(Cont) (Amp) PD @ TC = 25°C (Watts) MTE20N60 20 250 10 MTE20N55 20 250 0.20 12.5 MTE25N50 25 250


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    PDF MTE20N60 MTE20N55 MTE25N50 MTE25N45 MTE30N40 MTE30N35 MTE60N20 MTE60N18 MTE65N15 MTE65N12 MTE65N12 MOSFETs MTE100N05 MTE75N10 to-204aa