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    Samtec Inc MH081-01SB1-MH1RP-0112

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    MH0810 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MH0810 Micro Electronics EPITAXIAL TRANSISTORS FOR 3-5W AF OUTPUT Scan PDF
    MH0810 Micro Electronics Semiconductor Device Data Book Scan PDF
    MH0810 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    MH0810 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MH0810 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)30è V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)12 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original
    PDF MH0810 Freq30M

    BC238 h parameter

    Abstract: MH 0810C hFE Group 8100C ME8100 MH8100 MH0810 BC308 1I103 BC238
    Text: MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3 - 5 W AF OUTPUT MICRO ELECTRONICS The MH8100 NPN , MH0810 (PNP) are complementary silicon planar epitaxial transistors designed fo r the output stages of 3 - 5 watt audio amplifiers. They are also suitable for


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    PDF MH8100 MH0810 O-220B 10rnS) 100-ohms MH8100, MH0810, BC238, BC338, BC308, BC238 h parameter MH 0810C hFE Group 8100C ME8100 MH8100 MH0810 BC308 1I103 BC238

    BC238 h parameter

    Abstract: 5v 3w audio amplifier 5.5w
    Text: MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3-.5W AF OUTPUT IVIIGRO ELECTRONICS The MH8100 NPN , MH0810 (PNP) are complementary silicon planar epitaxial transistors designed fo r the output stages of 3 - 5 watt audio amplifiers. They are also suitable for


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    PDF MH8100 MH0810 O-220B 55KHz, 440mA 0I80HW* 00T8HH! MH8100, MH0810, BC238, BC238 h parameter 5v 3w audio amplifier 5.5w

    MH0810

    Abstract: MH8100
    Text: MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3-.5W AF OUTPUT IVIIGRO ELECTRONICS The MH8100 NPN , silicon planar epitaxial MH0810 (PNP) are complementary transistors designed for the output stages of 3 - 5 watt audio amplifiers. They are also suitable for


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    PDF MH8100 MH0810 2343Q181 MH0810 MH8100

    2sc1061

    Abstract: 2SC1626 2N6108
    Text: Power Transistors TYPE POLA­ CASE NO. RITY U te min max Ic A V ce (V) max (V) fl COMPLE­ min MENTARY lc (A) (MHz) TYPE D45C12 MH0810 MH0816 MH0818 MH0870 P P P P P TO-220 TO-220 TO-220 TO-220 TO-220 30 12 10 10 30 4 3 1 1 4 80 30 60 80 50 20 40 40 40 40


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    PDF D45C12 MH0810 MH0816 MH0818 MH0870 MH8100 MH8106 MH8108 MH8500 MH8700 2sc1061 2SC1626 2N6108

    MH0810

    Abstract: MH8100
    Text: M MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3-.5W AF OUTPUT IVIICRO ELECTRONICS The MH8100 NPN , MH0810 (PNP) are complementary silicon planar epitaxial transistors designed for the output stages of 3—5 watt audio amplifiers. They are also suitable for


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    PDF MH8100 MH0810 O-220B TA-25 box6m77 MH0810 MH8100

    2n6125

    Abstract: No abstract text available
    Text: Power Transistors TYPE POLA­ NO. RITY M AXIM UM RATINGS CASE Pd IC VCEO mW (A) (V) H FE VCE(sat) min max IT CO M P L E ­ IC VCE max IC min MENTARY (mA) (V) (V) (A) (MHz) TYPE 0.5 0.2 0.2 1 0.5 2 2 2 2 2 0.8 0.5 0.5 0.8 0.8 2 0.5 0.5 2 2 30 50 50 5 30 MH8100


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    PDF MH8100 MH8106 MH8108 MH8700 MH0810 MH0816 MH0818 2n6125

    2SA532

    Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
    Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G


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    PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357