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    MHVIC910HNR2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MHVIC910HNR2 Freescale Semiconductor 921 MHz-960 MHz SiFET RF Integrated Power Amplifier Original PDF

    MHVIC910HNR2 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC910HNR2 Rev. 9, 5/2006 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HNR2 The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Freescale’s newest High Voltage 26 Volts LDMOS IC technology, and


    Original     		PDF MHVIC910HNR2 MHVIC910HNR2

    MHVIC910HNR2

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC910HNR2 Rev. 8, 10/2005 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HNR2 The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Freescale’s newest High Voltage 26 Volts LDMOS IC technology, and


    Original     		PDF MHVIC910HNR2 MHVIC910HNR2

    840 s

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC910HNR2 Rev. 8, 10/2005 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HNR2 The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Freescale’s newest High Voltage 26 Volts LDMOS IC technology, and


    Original     		PDF MHVIC910HNR2 MHVIC910HNR2 840 s

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC910HNR2 Rev. 7, 7/2005 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HNR2 The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Freescale’s newest High Voltage 26 Volts LDMOS IC technology, and


    Original     		PDF MHVIC910HNR2 MHVIC910HNR2

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 5, 1/2005 Will be replaced by MHVIC910HNR2 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MHVIC910HR2 921 MHz - 960 MHz SiFET


    Original     		PDF MHVIC910HNR2 MHVIC910HR2

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MHVIC910HR2 Rev. 7, 8/2006 Freescale Semiconductor Technical Data Replaced by MHVIC910HNR2. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations,


    Original     		PDF MHVIC910HR2 MHVIC910HNR2. MHVIC910HR2

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC910HR2 Rev. 6, 7/2005 Will be replaced by MHVIC910HNR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MHVIC910HR2 921 MHz - 960 MHz SiFET


    Original     		PDF MHVIC910HNR2 PFP-16 MHVIC910HR2 MHVIC910HR2

    MHVIC910HR2

    Abstract: A113 HDR2X10STIMCSAFU MHVIC910HNR2 J559
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC910HR2 Rev. 7, 8/2006 Replaced by MHVIC910HNR2. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations,


    Original     		PDF MHVIC910HR2 MHVIC910HNR2. MHVIC910HR2 A113 HDR2X10STIMCSAFU MHVIC910HNR2 J559

    MHVIC910HR2

    Abstract: A113 HDR2X10STIMCSAFU MHVIC910HNR2 J5-96
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC910HNR2 Rev. 9, 5/2006 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HNR2 The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Freescale’s newest High Voltage 26 Volts LDMOS IC technology, and


    Original     		PDF MHVIC910HNR2 MHVIC910HNR2 MHVIC910HR2 A113 HDR2X10STIMCSAFU J5-96

    ipc 840

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MHVIC910HR2 Rev. 5, 1/2005 Will be replaced by MHVIC910HNR2 end of Q205. N suffix indicates 260°C reflow capable. The PFP−16 package has had lead−free terminations from its initial release. MHVIC910HR2 921 MHz − 960 MHz SiFET


    Original     		PDF MHVIC910HNR2 PFP-16 MHVIC910HR2 92nductor ipc 840

    HDR2X10

    Abstract: MHVIC910HNR2 HDR2X10STIMCSAFU 2052-1618
    Text: Freescale Semiconductor Technical Data 921 MHz-960 MHz SiFET RF Integrated Power Amplifier MHVIC910HNR2 LIFETIME BUY The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Freescale’s newest High Voltage 26 Volts LDMOS IC technology, and


    Original     		PDF MHVIC910HNR2 PFP--16 MHVIC910HNR2 HDR2X10 HDR2X10STIMCSAFU 2052-1618

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC910HR2 Rev. 6, 7/2005 Will be replaced by MHVIC910HNR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MHVIC910HR2 921 MHz - 960 MHz SiFET


    Original     		PDF MHVIC910HNR2 PFP-16 MHVIC910HR2 MHVIC910HR2

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


    Original     		PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


    Original     		PDF

    MC9S12XDP384

    Abstract: MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb
    Text: Freescale Semiconductor Product Selector Guide Cross-Reference Quarter 3, 2005 SG1000CRQ32005 Rev 0 Introduction The Freescale Semiconductor Product Selector Guide Cross-Reference provides a listing of all products documented in the fifteen Freescale Semiconductor Product


    Original     		PDF SG1000CRQ32005 SG1000CRQ32005 MC9S12XDP384 MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb

    MMM6029

    Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
    Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular


    Original     		PDF SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications