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    MJ2501 Search Results

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    MJ2501 Price and Stock

    STMicroelectronics MJ2501

    TRANS PNP DARL 80V 10A TO3
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    DigiKey MJ2501 Bulk
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    Component Electronics, Inc MJ2501 4
    • 1 $4.62
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    • 100 $3.46
    • 1000 $3
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    SPC Multicomp MJ2501

    Transistor, Bipolar, Pnp, 80V, 10A, To-3-2; Transistor Polarity:Pnp; No. Of Pins:2Pins; Transistor Mounting:Through Hole; Operating Temperature Max:200°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:80V Rohs Compliant: Yes |Multicomp Pro MJ2501
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    Newark MJ2501 Bulk 1
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    New Jersey Semiconductor Products, Inc. MJ2501

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    Bristol Electronics MJ2501 4,863 2
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    • 100 $1.8399
    • 1000 $1.6164
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    Motorola Semiconductor Products MJ2501

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    Bristol Electronics MJ2501 8
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    Quest Components MJ2501 18
    • 1 $15
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    MJ2501 7
    • 1 $3.88
    • 10 $2.91
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    MJ2501 4
    • 1 $13.62
    • 10 $6.81
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    MJ2501 2
    • 1 $3.5223
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    MJ2501 1
    • 1 $6
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    New Jersey Semiconductor Products Inc MJ2501

    TRANSISTOR,BJT,DARLINGTON,PNP,80V V(BR)CEO,10A I(C),TO-204AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MJ2501 3,890
    • 1 $5.28
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    • 1000 $2.112
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    Find more MJ2501 price and stock on Findchips.com

    MJ2501 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJ2501 Central Semiconductor Power Transistors Original PDF
    MJ2501 Comset Semiconductors Silicon Epitaxial Base Darlington - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=1kmin / fT(Hz)=1M / Pwr(W)=150 Original PDF
    MJ2501 Motorola MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=1kmin / fT(Hz)=1M / Pwr(W)=150 Original PDF
    MJ2501 Unknown 10 Ampere Darlington Power Transistors Complementary Silicon Original PDF
    MJ2501 On Semiconductor Medium-Power Complementary Silicon Transistors - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=1kmin / fT(Hz)=1M / Pwr(W)=150 Original PDF
    MJ2501 Semelab Complementary Darlington Power Transistor - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=1kmin / fT(Hz)=1M / Pwr(W)=150 Original PDF
    MJ2501 STMicroelectronics COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Original PDF
    MJ2501 Central Semiconductor POWER DARLINGTON TRANSISTORS (METAL) Scan PDF
    MJ2501 Crimson Semiconductor EPITAXIAL BASE Transistor Scan PDF
    MJ2501 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    MJ2501 Motorola The European Selection Data Book 1976 Scan PDF
    MJ2501 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MJ2501 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJ2501 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJ2501 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJ2501 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MJ2501 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MJ2501 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MJ2501 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MJ2501 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    MJ2501 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJ3001

    Abstract: MJ3000 MJ2501 transistor mj3001 MJ2500 MJ3001 equivalent MJ3000/MJ3001
    Text: MJ2500 - MJ2501 PNP MJ3000 - MJ3001 NPN SILICON EPITAXIAL-BASE DARLINGTON The MJ2500, and MJ2501 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications.


    Original     		PDF MJ2500 MJ2501 MJ3000 MJ3001 MJ2500, MJ2500 MJ3000 transistor mj3001 MJ3001 equivalent MJ3000/MJ3001

    mj3001

    Abstract: mj2501 MJ3000 AIN60
    Text: MJ2500/MJ2501 MJ3000/MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are


    Original     		PDF MJ2500/MJ2501 MJ3000/MJ3001 MJ2501 MJ3001 MJ2500, MJ3000 AIN60

    mj3001

    Abstract: No abstract text available
    Text: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u


    Original     		PDF MJ2501 MJ3001 MJ3001. mj3001

    MJ3001

    Abstract: transistor mj3001 mj2501 MJ3001 equivalent SGS-Thomson
    Text: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power


    Original     		PDF MJ2501 MJ3001 MJ2501 MJ3001. MJ3001 transistor mj3001 MJ3001 equivalent SGS-Thomson

    Untitled

    Abstract: No abstract text available
    Text: MJ2501 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF MJ2501 O204AA) 18-Jun-02

    transistor mj3001

    Abstract: MJ2501 MJ3001
    Text: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES • ■ APPLICATION AUDIO POWER AMPLIFIER ■ DC-AC CONVERTER ■ EASY DRIVER FOR LOW VOLTAGE DC MOTOR ■ GENERAL POWER SWITCHING


    Original     		PDF MJ2501 MJ3001 MJ2501 MJ3001. transistor mj3001 MJ3001

    Untitled

    Abstract: No abstract text available
    Text: MJ2501 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)400uÌ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k


    Original     		PDF MJ2501

    MJ3001 equivalent

    Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc


    Original     		PDF MJ2955 2N3055) MJ2955A 2N3055A) MJ2500 MJ2501* MJ3000 MJ3001* TIP73B TIP74 MJ3001 equivalent MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement

    MJ3001

    Abstract: MJ2501
    Text: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power


    Original     		PDF MJ2501 MJ3001 MJ2501 MJ3001. MJ3001

    MJ3001

    Abstract: MJ2501 MJ3001 equivalent Premier Devices transistor mj3001 npn power darlington to-3 150w
    Text: MJ2501 & MJ3001 10A, 150W, 80V Features: • Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain hFE = 1000 Typical at IC = 5.0A. • Monolithic construction with built Base-Emitter Shunt Resistors.


    Original     		PDF MJ2501 MJ3001 MJ2501 MJ3001 MJ3001 equivalent Premier Devices transistor mj3001 npn power darlington to-3 150w

    2n3055 motorola

    Abstract: motorola MJ3000 transistor mj3001 mj3000 npn darlington transistor 150 watts MJ3000 circuit 100 amp npn darlington power transistors 2N3055A 2n3055 MJ2500 MJ2501
    Text: MOTOROLA Order this document by MJ2500/D SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501*


    Original     		PDF MJ2500 MJ2501 MJ3000 MJ3001 MJ2500/D* MJ2500/D 2n3055 motorola motorola MJ3000 transistor mj3001 mj3000 npn darlington transistor 150 watts MJ3000 circuit 100 amp npn darlington power transistors 2N3055A 2n3055 MJ2500 MJ2501

    npn darlington transistor 150 watts

    Abstract: transistor mj3001 MOTOROLA POWER TRANSISTOR MOTOROLA TRANSISTOR NPN bipolar junction transistors max hfe 2000 MJ2501 MJ3001 transistor MJ2501 MJ3001 motorola transistor mj3001 to-3
    Text: MOTOROLA Order this document by MJ2501/D SEMICONDUCTOR TECHNICAL DATA PNP MJ2501 NPN Medium-Power Complementary Silicon Transistors MJ3001 Motorola Preferred Devices . . . for use as output devices in complementary general purpose amplifier applications. 10 AMPERE


    Original     		PDF MJ2501/D MJ2501 MJ3001 npn darlington transistor 150 watts transistor mj3001 MOTOROLA POWER TRANSISTOR MOTOROLA TRANSISTOR NPN bipolar junction transistors max hfe 2000 MJ2501 MJ3001 transistor MJ2501 MJ3001 motorola transistor mj3001 to-3

    transistor darlington package to.3

    Abstract: transistor mj3001 MJ2501 transistor mj3001 to-3 MJ3001 equivalent transistor darlington package to.3 3 pin MJ3001 150w darlington transistor to3 package pnp 150w darlington transistor to3 package
    Text: MJ2501 - PNP MJ3001 - NPN SEME LAB MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . COMPLEMENTARY DARLINGTON POWER TRANSISTOR 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . APPLICATIONS 1 1 .4 3 (0 .4 5 0 )


    Original     		PDF MJ2501 MJ3001 MJ3001 transistor darlington package to.3 transistor mj3001 transistor mj3001 to-3 MJ3001 equivalent transistor darlington package to.3 3 pin 150w darlington transistor to3 package pnp 150w darlington transistor to3 package

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)


    OCR Scan     		PDF 5-500V MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 MJ10012 MJ13015

    motorola MJ3000

    Abstract: transistor MJ2501 MJ3000 circuit mj2501 mj3000 MJ3001 transistor mj3001
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA ‘"W M f a y f lf t w a n g o g s M aKM SA •M -H H ttM A ) Medium-Power Complementary Silicon Transistors PNP MJ2500 MJ2501* NPN MJ3000 MJ3001* . . . for use as output devices in complementary general purpose amplifier applica­


    OCR Scan     		PDF MJ2500 MJ2501* MJ3000 MJ3001* MJ3000 MJ2501 motorola MJ3000 transistor MJ2501 MJ3000 circuit MJ3001 transistor mj3001

    Untitled

    Abstract: No abstract text available
    Text: rz 7 SCS-THOM SON MJ2501 i*! i[LI ¥[M0 gS MJ3001 COMPLEMENTARY SIUCOnTto W ^ TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3


    OCR Scan     		PDF MJ2501 MJ3001 MJ2501 MJ3001.

    transistor mj3001

    Abstract: j3000 MJ3001 transistor MJ2501 MJ2500 MJ2501 AN-415 J2500 J2501 MJ3000
    Text: MJ2500, MJ2501, MJ3000, MJ3001 continued E L E C T R IC A L C H A R A C T E R IS T IC S (Tc = 2S°C unless otherwise noted)_ _ _ | Characteristic | Symbol | M in | M ix I O F F C H A R A C T E R IS T IC S


    OCR Scan     		PDF MJ2500, MJ2501, MJ3000, MJ3001 J3000 J2501. MJ3001 J2500, MJ3000 transistor mj3001 transistor MJ2501 MJ2500 MJ2501 AN-415 J2500 J2501

    motorola sps transistor

    Abstract: 851 MOTOROLA Motorola bipolar transistor 477 motorola transistor mj3001 MJ3001 motorola
    Text: MOTOROLA Order this document by MJ2501/D SEMICONDUCTOR TECHNICAL DATA PNP MJ2501 NPN M edium -Power Com plem entary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applica tions. • High DC Current Gain — hFE = 4000 Typ @ lc = 5.0 Ade


    OCR Scan     		PDF MJ2501/D MJ2501 MJ3001 81-3-54S7-848S motorola sps transistor 851 MOTOROLA Motorola bipolar transistor 477 motorola transistor mj3001 MJ3001 motorola

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON MJ2501 MJ3001 RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3


    OCR Scan     		PDF MJ2501 MJ3001 MJ2501 MJ3001. P003F

    transistor mj3001

    Abstract: TRANSISTOR 2SC 635 MJ3000 MJ3000 circuit MJ2501 MJ3001 J3000 j-2500 MJ2500 AN-415
    Text: MJ2500, MJ2501 PNP SILICON MJ3000, MJ3001 NPN 10 A M PERE D A R L IN G T O N POWER T R A N SIST O R S C O M PLEM EN T A R Y SILIC O N MEDIUM-POW ER C O M PLEM EN TA R Y SILIC O N T R A N SIST O R S . 6 0 -8 0 V O L T S 150 W A T T S for use as o u tp u t devices in co m ple m e n tary general purpose


    OCR Scan     		PDF MJ2500, MJ2501 MJ3000, MJ3001 MJ2500 MJ3000 -MJ2501 transistor mj3001 TRANSISTOR 2SC 635 MJ3000 circuit J3000 j-2500 AN-415

    MJ3001

    Abstract: mj3000
    Text: SGS-THOMSON MJ2500/MJ2501 MJ3000/MJ3001 ÜLieTOOffäDOl COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are


    OCR Scan     		PDF MJ2500/MJ2501 MJ3000/MJ3001 MJ2501 MJ3001 MJ2500, MJ2501 MJ3000 mj3000

    MJ2500

    Abstract: MJ2501 MJ3001 MJ3000 MJ3000/MJ3001
    Text: MJ2500 MJ2501 MJ3000 MJ3001 PNP NPN SILICON COMPLEMENTARY TRANSISTORS POWER DARLINGTON 10 AMPERES, 60-80 VOLTS semicomluctc * Central Semiconductor Corp. 145 Adams Avenue Hauppauge, New York 11 788 JEDEC T0-3 CASE DESCRIPTION The CENTRAL S EM ICONDUCTOR MJ2500, MJ3000 Series are mediurn - power Complementary Silicon


    OCR Scan     		PDF MJ2500 MJ2501 MJ3000 MJ3001 MJ2500, MJ2501 MJ3000/MJ3001

    j3001

    Abstract: I/J3001-3002 MJ2501 MJ3000M
    Text: SGS-THOMSON RflDeiRi IILiera [S!lD ei MJ2500/MJ2501 MJ3000/MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors


    OCR Scan     		PDF MJ2500/MJ2501 MJ3000/MJ3001 MJ2501 MJ3001 MJ2500, MJ3000 J2500 J3000 j3001 I/J3001-3002 MJ3000M

    2SC 1177

    Abstract: npn darlington transistor 150 watts MJ2500 MJ2501 MJ3000 MJ3001 darlington complementary power amplifier MJ3000 circuit MJ3000/MJ3001
    Text: MJ2500, MJ2501 PNP SILICON MJ3000, MJ3001 NPN 10 A M PERE D A R L IN G T O N POWER T R A N SIST O R S C O M PLEM EN T A R Y SILIC O N MEDIUM-POW ER C O M PLEM EN TA R Y SILIC O N T R A N SIST O R S . 6 0 -8 0 V O L T S 150 W A T T S for use as o u tp u t devices in co m ple m e n tary general purpose


    OCR Scan     		PDF MJ2500, MJ2501 MJ3000, MJ3001 MJ2500 MJ3000 2SC 1177 npn darlington transistor 150 watts darlington complementary power amplifier MJ3000 circuit MJ3000/MJ3001