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    MJ413 Price and Stock

    ams OSRAM Group LUW-CRBP-LYLZ-IMJ4-1-350-R18-Z-XX

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    ams OSRAM Group LUW-CRBP-LXLZ-IMJ4-1-350-R18-Z-XX

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    ams OSRAM Group LUW-CRBP-LYLZ-HMJ4-1-350-R18-Z-BSH

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    ams OSRAM Group LUW-CRBP-LYLZ-IMJ4-1-350-R18-Z-ADB

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    New Jersey Semiconductor Products, Inc. MJ413

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MJ413 8,434 1
    • 1 $5.1072
    • 10 $3.3197
    • 100 $2.3835
    • 1000 $2.094
    • 10000 $2.094
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    Find more MJ413 price and stock on Findchips.com

    MJ413 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJ413 Micro Commercial Components 10 Amp NPN Silicon Power Transistors 125W Original PDF
    MJ413 Motorola 10 AMPERE POWER TRANSISTORS NPN SILICON Original PDF
    MJ413 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original PDF
    MJ413 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    MJ413 Motorola The European Selection Data Book 1976 Scan PDF
    MJ413 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MJ413 Motorola European Master Selection Guide 1986 Scan PDF
    MJ413 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJ413 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJ413 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJ413 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MJ413 Unknown Vintage Transistor Datasheets Scan PDF
    MJ413 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJ413 Unknown Transistor Replacements Scan PDF
    MJ413 Unknown Transistor Replacements Scan PDF
    MJ413 Unknown Transistor Replacements Scan PDF
    MJ413 Semiconductor Technology NPN High Voltage Power Transistors in TO-3 and TO-220 Case Outline Scan PDF
    MJ413-BP Micro Commercial Components TRANS GP BJT NPN 400V 10A 2TO-3 Original PDF

    MJ413 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJ413

    Abstract: MJ423 MOTOROLA TRANSISTOR mj423 motorola
    Text: MOTOROLA Order this document by MJ413/D SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and


    Original     		PDF MJ413/D* MJ413/D MJ413 MJ423 MOTOROLA TRANSISTOR mj423 motorola

    MJ413

    Abstract: No abstract text available
    Text: MJ413 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF MJ413 O204AA) 31-Jul-02 MJ413

    mj431

    Abstract: No abstract text available
    Text: tSs.mi-C.ondii.ckoi ^Pioaucki, Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJ413 MJ423 MJ431 Features • • • 10 Amp NPN Silicon Power Transistors 125W High Collector-Emitter Voltage VCEs=400V


    Original     		PDF MJ413 MJ423 MJ431 mj431

    MJ413

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification MJ413 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage APPLICATIONS ·Designed for medium-to-high voltage Inverters,converters,regulators and switching circuits PINNING see Fig.2 PIN


    Original     		PDF MJ413 MJ413

    DC DC converter 50mA 400V

    Abstract: npn transistor 400V 400V voltage regulator DC DC converter 5v to 400V 400V 100MA NPN diode 400v 0.5a npn transistors 400V 1A MJ413
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ413 DESCRIPTION •High Collector-Emitter Sustaining Voltage: VCEO SUS = 325V(Min.) ·DC Current Gain: hFE= 20-80@ IC= 0.5A APPLICATIONS ·Designed for medium to high voltage inverters, converters,


    Original     		PDF MJ413 100mA; DC DC converter 50mA 400V npn transistor 400V 400V voltage regulator DC DC converter 5v to 400V 400V 100MA NPN diode 400v 0.5a npn transistors 400V 1A MJ413

    Untitled

    Abstract: No abstract text available
    Text: MJ413 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF MJ413 O204AA) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: MJ413 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF MJ413 O204AA) 16-Jul-02

    MJ423

    Abstract: MJ413 MJ431
    Text: MCC HDWXUHV • • • MJ413 MJ423 MJ431   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 10 Amp NPN Silicon Power Transistors 125W High Collector-Emitter Voltage VCES=400V DC Current Gain Specified 3.5A


    Original     		PDF MJ413 MJ423 MJ431 MJ423 MJ413 MJ431

    transistor MJ2501

    Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc


    Original     		PDF MJ413 MJ423 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C transistor MJ2501 BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


    Original     		PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original     		PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    MJ413

    Abstract: MJ431 MJ450
    Text: MJ431 For Specifications, See MJ413 Data. MJ450 SILICON 30 A M PER E POWER TRANSISTO R HIGH-POWER PNP SILICON T RAN SISTO R PNP SILICON . . . designed fo r high-current switching and general purpose am plifier applications. • Low Saturation Voltage - V cE (sat) * 1 *0 V d c *C = 10 Ac|c


    OCR Scan     		PDF MJ431 MJ413 MJ450 40Vdc, MJ431 MJ450

    MJ423

    Abstract: MJ413 J413 NIJ431 MJ431
    Text: MJ413 SILICON MJ423 MJ431 CASE 11 High-voltage NPN silicon tra n sisto rs designed for medium-to-high-voltage in v e rters, converters, re g ­ u lato rs and switching circuits. Q ) S T Y L E 1: PIN T . BA SE 2. EM IT TER C A SE: CO LLEC TOR MAXIMUM RATINGS


    OCR Scan     		PDF MJ413 MJ423 MJ431 MJ413 MJ431 J413 NIJ431

    J413

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJ413/D SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for m e d iu m -to -h ig h voltage inverters, converters, regulators and


    OCR Scan     		PDF MJ413/D MJ413 MJ423 MJ413 O-204AA J413

    mj413

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F ia E D I b3fa?55M M | MJ413 MJ423 MJ431 MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH-VOLTAGE NPN SILICON TRA N SISTO RS 10 AM PERE POWER TRAN SISTO RS NPN SILICON . . . designed fo r m edium -to-high voltage inverters,converters, regulators and sw itching circuits.


    OCR Scan     		PDF MJ413 MJ423 MJ431

    transistor buv18a

    Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
    Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min


    OCR Scan     		PDF MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845