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    MJE13005 Price and Stock

    Central Semiconductor Corp MJE13005-PBFREE

    TRANS NPN 400V 4A TO220-3
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    DigiKey MJE13005-PBFREE Bulk 418 1
    • 1 $4.16
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    onsemi MJE13005

    TRANS NPN 400V 4A TO220
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    Quest Components MJE13005 572
    • 1 $0.84
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    MJE13005 284
    • 1 $1.1
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    MJE13005 36
    • 1 $1.4
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    onsemi MJE13005G

    TRANS NPN 400V 4A TO220
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    ComSIT USA MJE13005G 27
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    Micro Commercial Components MJE13005-BP

    TRANS NPN 400V 4A TO220AB
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    Micro Commercial Components MJE13005F-BP

    TRANS NPN 420V 4A ITO220AB
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    MJE13005 Datasheets (70)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJE13005 Central Semiconductor TRANS GP BJT NPN 400V 4A 3TO-220 Original PDF
    MJE13005 Fairchild Semiconductor High Voltage Switch Mode Application Original PDF
    MJE13005 Korea Electronics Switching Transistor Original PDF
    MJE13005 Motorola Silicon NPN Transistor Original PDF
    MJE13005 Motorola 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS Original PDF
    MJE13005 On Semiconductor SWITCHMODE Series NPN Silicon Power Transistors Original PDF
    MJE13005 On Semiconductor 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS - 75 WATTS Original PDF
    MJE13005 Philips Semiconductors Silicon Diffused Power Transistors Original PDF
    MJE13005 Sinyork Mini size of Discrete semiconductor elements Original PDF
    MJE13005 STMicroelectronics SILICON NPN SWITCHING TRANSISTOR Original PDF
    MJE13005 USHA Switchmode power transistor. High voltage, high speed power switching inductive circuits. Vceo(sus) = 400Vdc, Vcev = 700Vdc, Vebo = 9Vdc. Original PDF
    MJE13005 USHA NPN, silicon plastic power transistor. For 115 and 220V switch-mode applications such as switching regulators, inverters motor controls, solenoid/relay drivers and deflection circuits. Vceo(sus) = 400Vdc, Vcev = 700Vdc, Veb = 9Vdc, Ic = 4Adc, Pd = 75W. Original PDF
    MJE13005 Various Russian Datasheets Transistor Original PDF
    MJE13005 Wing Shing Computer Components NPN SILICON TRANSISTOR(ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT) Original PDF
    MJE13005 Advanced Semiconductor RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE Scan PDF
    MJE13005 Central Semiconductor Power Transistors Scan PDF
    MJE13005 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    MJE13005 General Electric Power Transistor Data Book 1985 Scan PDF
    MJE13005 Korea Electronics Switching Transistor Scan PDF
    MJE13005 Korea Electronics TRIPLE DIFFUSED NPN TRANSISTOR Scan PDF

    MJE13005 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    equivalent mje13005

    Abstract: 2N2222 transistor output curve transistor mje13005 mje13005 equivalent
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 O-220 QW-R203-018 equivalent mje13005 2N2222 transistor output curve transistor mje13005 mje13005 equivalent

    equivalent mje13005

    Abstract: 1N4933 equivalent
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 O-220 QW-R203-018 equivalent mje13005 1N4933 equivalent

    equivalent mje13005

    Abstract: Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 MJE13005L-x-T60-K QW-R203-018 equivalent mje13005 Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005-K QW-R203-045

    2n222 TRANSISTOR

    Abstract: MJE13005G equivalent mje13005 transistors mje13005 transistor 2n222 circuit based on MJE13005 1N493 AMP24 1N5820 2N222
    Text: MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls,


    Original     		PDF MJE13005G MJE13005/D 2n222 TRANSISTOR MJE13005G equivalent mje13005 transistors mje13005 transistor 2n222 circuit based on MJE13005 1N493 AMP24 1N5820 2N222

    IC2A

    Abstract: MJE13005F
    Text: SEMICONDUCTOR MJE13005F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES ・Excellent Switching Times


    Original     		PDF MJE13005F IC2A MJE13005F

    13005D

    Abstract: transistor 13005D MJE13005D 13005 transistor MJE -1103 MJE13005-D diode 611 mje130 MJE1300
    Text: SEMICONDUCTOR MJE13005D MARKING SPECIFICATION TO-220AB PACKAGE 1. Marking method Laser Marking or Ink Marking. 2. Marking 1 K MJE 2 13005D 3 No. 611 4 Item Marking Description KEC K KEC CORP. MJE Device Name MJE13005D 13005D 2007. 9. 4 hFE Grade - Lot No.


    Original     		PDF MJE13005D O-220AB 13005D 13005D transistor 13005D MJE13005D 13005 transistor MJE -1103 MJE13005-D diode 611 mje130 MJE1300

    application notes MJE13005

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MJE13005 Features • Mounting Torgue: 5 in-lbs Maximum Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates


    Original     		PDF MJE13005 -55OC 3DD13005 O-220 application notes MJE13005

    equivalent mje13005

    Abstract: transistor 2N222 mje13005-5 2n222 TRANSISTOR 1N493 1N4933 2N222 2N2905 MJE13005 MJE13005G
    Text: MJE13005 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications


    Original     		PDF MJE13005 MJE13005/D equivalent mje13005 transistor 2N222 mje13005-5 2n222 TRANSISTOR 1N493 1N4933 2N222 2N2905 MJE13005 MJE13005G

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  TO-220 TO-220F DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


    Original     		PDF MJE13005D O-220 O-220F MJE13005D O-251 QW-R502-379

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO


    Original     		PDF MJE13005 O-220F Co000 QW-R219-001 100ms

    mje13005df

    Abstract: IC free
    Text: SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A ・Built-in Free wheeling Diode makes efficient anti saturation operation. C P ・Low base drive requirement. B E SYMBOL RATING UNIT


    Original     		PDF MJE13005DF mje13005df IC free

    equivalent mje13005

    Abstract: circuit based on MJE13005 MJE13005L-TA3-T transistor B c167 MJE13005-TA3-T MJE13005-TF3-T MJE210 MR826 1N4933 MJE13005
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 O-220 O-220F MJE13005L QW-R203-018 equivalent mje13005 circuit based on MJE13005 MJE13005L-TA3-T transistor B c167 MJE13005-TA3-T MJE13005-TF3-T MJE210 MR826 1N4933 MJE13005

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 QW-R203-018.

    MJE13005L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-Q NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005-Q QW-R221-027 MJE13005L

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005-K QW-R203-045

    TRANSISTOR 400 VOLTS

    Abstract: MJE13005 MJE13005G
    Text: MJE13005 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications


    Original     		PDF MJE13005 TRANSISTOR 400 VOLTS MJE13005 MJE13005G

    mje13005

    Abstract: MJE-13005
    Text: MJE13005 SILICON NPN SWITCHING TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13005 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package particularly intended for switch-mode applications. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF MJE13005 MJE13005 O-220 O-220 MJE-13005

    MJE13005H

    Abstract: MJE13005HL Shenzhen SI Semiconductors, LTD
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification MJE13005HL MJE LOW VOLTAGE SERIES TRANSISTORS FEATURES APPLICATION: HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING SUITABLE FOR 110V CIRCUIT MODE WIDE SOA FLUORESCENT LAMP ELECTRONIC BALLAST Absolute Maximum Ratings


    Original     		PDF MJE13005HL O-220 O-220 MJE13005H MJE13005HL Shenzhen SI Semiconductors, LTD

    mje13005d equivalent

    Abstract: IC free MJE13005D IC free transistor hFE-100 low power
    Text: SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. A O C Suitable for half bridge light ballast Applications. F Low base drive requirement.


    Original     		PDF MJE13005D 05RRENT mje13005d equivalent IC free MJE13005D IC free transistor hFE-100 low power

    MJE13004

    Abstract: application notes MJE13005 equivalent mje13005 MJE13005
    Text: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN PLASTIC POWER TRANSISTORS MJE13004 MJE13005 TO-220 Plastic Package Switchmode Series NPN Silicon Power Transistors ABSOLUTE MAXIMUM RATINGS


    Original     		PDF MJE13004 MJE13005 O-220 C-120 MJE13004 MJE13005Rev240402E application notes MJE13005 equivalent mje13005 MJE13005

    T1P122

    Abstract: T1P41C MJE30SST t1p41 T1P31 T1P41A BD211 2SD880Y 2SD88D 2N529B
    Text: POWER PACKAGE TRANSISTORS NPN M a x im u m R a t in g s Type No. 2SC3039 MJE13005 T1PS0 vEB0 PD •CBO • vC8 (V) (V) (V) (W) (V) Min Min Min e Tc=25°C 500 400 700 400 500 400 7 50 9 Max 10 hFE 400 40 e 'c (A) Min 75 5 450 350 5 300 300 3 21 T1P48 400


    OCR Scan     		PDF 2SC3039 MJE13005 T1P49 MJE30SST TIP31A T1P41A TIP120 CIL4006 BD211 BD243 T1P122 T1P41C t1p41 T1P31 2SD880Y 2SD88D 2N529B

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 15E D J - t 3 t 7 S S M 000530*! S | T - 3 3 -J 3 MOTOROLA MJE13004 MJE13005 SEMICONDUCTOR TECHNICAL DATA 4 AM PERE I o s i { » 'n o r s D a t a S h e e t NPN SILICON POWER TRANSISTORS SWITCHMODE S E R IE S NPN SILICO N POWER T R A N SIST O R S


    OCR Scan     		PDF MJE13004 MJE13005

    transistor hh 004

    Abstract: E13005F hh 004 f E1300 W2W TRANSISTOR MJE13005F
    Text: SEMICONDUCTOR MJE13005F TECH NICAL D A T A t r ip le d iffu s e d npn t r a n s is t o r SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES • Excellent Switching Times


    OCR Scan     		PDF MJE13005F transistor hh 004 E13005F hh 004 f E1300 W2W TRANSISTOR MJE13005F