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    MMBFJ309 Price and Stock

    onsemi SMMBFJ309LT1G

    RF MOSFET JFET 25V SOT23-3
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    DigiKey SMMBFJ309LT1G Digi-Reel 32,018 1
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    SMMBFJ309LT1G Cut Tape 32,018 1
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    SMMBFJ309LT1G Reel 24,000 3,000
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    Avnet Americas SMMBFJ309LT1G Reel 14 Weeks 9,000
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    Mouser Electronics SMMBFJ309LT1G 33,720
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    Newark SMMBFJ309LT1G Reel 3,000
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    Ameya Holding Limited SMMBFJ309LT1G 8,112
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    Avnet Silica SMMBFJ309LT1G 15 Weeks 3,000
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    onsemi MMBFJ309LT1G

    RF MOSFET JFET SOT23-3
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    DigiKey MMBFJ309LT1G Cut Tape 22,009 1
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    MMBFJ309LT1G Digi-Reel 22,009 1
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    MMBFJ309LT1G Reel 21,000 3,000
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    Avnet Americas MMBFJ309LT1G Ammo Pack 17 Weeks, 4 Days 1
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    MMBFJ309LT1G Ammo Pack 16 Weeks, 4 Days 1
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    MMBFJ309LT1G Reel 14 Weeks 9,000
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    Mouser Electronics MMBFJ309LT1G 719,048
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    Verical MMBFJ309LT1G 48,000 3,000
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    Arrow Electronics MMBFJ309LT1G 12,000 14 Weeks 3,000
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    MMBFJ309LT1G 3,000 14 Weeks 3,000
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    MMBFJ309LT1G Cut Strips 74 14 Weeks 1
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    Newark MMBFJ309LT1G Cut Tape 37,964 1
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    MMBFJ309LT1G Reel 6,000 3,000
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    MMBFJ309LT1G Cut Tape 2,763 1
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    Onlinecomponents.com MMBFJ309LT1G 48,000
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    Bristol Electronics MMBFJ309LT1G 29,759
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    TME MMBFJ309LT1G 5,805 1
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    Ameya Holding Limited MMBFJ309LT1G 17,758
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    NexGen Digital MMBFJ309LT1G 2
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    Avnet Asia MMBFJ309LT1G 14 Weeks 9,000
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    Avnet Silica MMBFJ309LT1G 15 Weeks 3,000
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    Chip-Germany GmbH MMBFJ309LT1G 6,000
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    EBV Elektronik MMBFJ309LT1G 16 Weeks 3,000
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    Flip Electronics MMBFJ309LT1G 12,000
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    Master Electronics MMBFJ309LT1G 48,000
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    New Advantage Corporation MMBFJ309LT1G 12,000 1
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    Win Source Electronics MMBFJ309LT1G 19,885
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    onsemi MMBFJ309

    RF MOSFET JFET 10V SOT23-3
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    DigiKey MMBFJ309 Reel
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    MMBFJ309 Digi-Reel 1
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    Avnet Americas MMBFJ309 Reel 0 Weeks, 2 Days 4,762
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    Flip Electronics MMBFJ309 71,498
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    Flip Electronics MMBFJ309

    RF MOSFET JFET 10V SOT23-3
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    DigiKey MMBFJ309 Reel 550
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    onsemi MMBFJ309LT1

    JFET N-CH 25V 30MA SOT23
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    DigiKey MMBFJ309LT1 Cut Tape 1
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    Bristol Electronics MMBFJ309LT1 2,845
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    MMBFJ309LT1 435 9
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    Quest Components MMBFJ309LT1 1,941
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    MMBFJ309LT1 348
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    Chip 1 Exchange MMBFJ309LT1 9,934
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    MMBFJ309 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBFJ309 Fairchild Semiconductor N-Channel RF Amplifier Original PDF
    MMBFJ309 Fairchild Semiconductor N-Channel RF Amplifier Original PDF
    MMBFJ309 Fairchild Semiconductor N-Channel RF Amplifier Original PDF
    MMBFJ309 PanJit Semiconductors J-FET HIGH FREQUENCY AMPLIFIER TRANSISTOR Original PDF
    MMBFJ309 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    MMBFJ309 National Semiconductor N-Channel RF Amplifier Scan PDF
    MMBFJ309 National Semiconductor JFET RF, VHF, UHF Amplifiers Scan PDF
    MMBFJ309L On Semiconductor Small Signal JFET Original PDF
    MMBFJ309LT1 Motorola JFET VHF/UHF Amplifier Transistor Original PDF
    MMBFJ309LT1 On Semiconductor JFET - VHF/UHF Amplifier Transistor N-Channel Original PDF
    MMBFJ309LT1 On Semiconductor JFET - VHF/UHF Amplifier Transistor N-Channel Original PDF
    MMBFJ309LT1 On Semiconductor JFET VHF-UHF Amplifier Transistor Original PDF
    MMBFJ309LT1 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MMBFJ309LT1 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, JFET, N Channel, 10V, VHF/UHF RF Amp, Pkg Style SOT23 Scan PDF
    MMBFJ309LT1-D On Semiconductor JFET - VHF-UHF Amplifier Transistor N-Channel Original PDF
    MMBFJ309LT1G On Semiconductor Small Signal SOT23 JFET N Channel 25V Tape and Reel Original PDF
    MMBFJ309_NL Fairchild Semiconductor N-Channel RF Amplifier Original PDF

    MMBFJ309 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Y22 SOT23

    Abstract: MMBFJ309LT1, Application Notes JFET with Yos MMBFJ309 MMBFJ309LT1 MMBFJ309LT1G MMBFJ310 MMBFJ310LT1 MMBFJ310LT1G
    Text: MMBFJ309LT1, MMBFJ310LT1 JFET − VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • Pb−Free Packages are Available 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS


    Original
    PDF MMBFJ309LT1, MMBFJ310LT1 OT-23 O-236) MMBFJ309LT1/D Y22 SOT23 MMBFJ309LT1, Application Notes JFET with Yos MMBFJ309 MMBFJ309LT1 MMBFJ309LT1G MMBFJ310 MMBFJ310LT1 MMBFJ310LT1G

    Transistor J310

    Abstract: J309 J310 J310 applications CBVK741B019 F63TNR MMBFJ309 MMBFJ310 PN2222N J310 Application Note
    Text: MMBFJ309 MMBFJ310 J309 J310 G D G S TO-92 SOT-23 D S Mark: 6U / 6T N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.


    Original
    PDF MMBFJ309 MMBFJ310 OT-23 Transistor J310 J309 J310 J310 applications CBVK741B019 F63TNR MMBFJ309 MMBFJ310 PN2222N J310 Application Note

    Untitled

    Abstract: No abstract text available
    Text: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • Drain and Source are Interchangeable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements; AEC−Q101 Qualified and


    Original
    PDF MMBFJ309L, MMBFJ310L, SMMBFJ310L AEC-Q101 OT-23 O-236) MMBFJ309LT1/D

    ua309

    Abstract: J310 equivalent J310 J310G J309-J310 J309 MMBFJ309 MMBFJ310 fr 309 625 GFG
    Text: J309 / J310 / MMBFJ309 / MMBFJ310 MMBFJ309 MMBFJ310 J309 J310 G S G S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and


    Original
    PDF MMBFJ309 MMBFJ310 MMBFJ309 OT-23 ua309 J310 equivalent J310 J310G J309-J310 J309 MMBFJ310 fr 309 625 GFG

    mmbfj310

    Abstract: MMBFJ309
    Text: ON Semiconductort JFET - VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N–Channel 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556


    Original
    PDF MMBFJ309LT1 MMBFJ310LT1 236AB) MMBFJ309LT1 mmbfj310 MMBFJ309

    MMBFJ310LT1G

    Abstract: MMBFJ310LT1 MMBFJ309LT1G ON SEMICONDUCTOR MMBFJ309LT1G MMBFJ309 MMBFJ309LT1 MMBFJ310
    Text: MMBFJ309LT1G, MMBFJ310LT1G JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage


    Original
    PDF MMBFJ309LT1G, MMBFJ310LT1G OT-23 O-236) MMBFJ309LT1/D MMBFJ310LT1G MMBFJ310LT1 MMBFJ309LT1G ON SEMICONDUCTOR MMBFJ309LT1G MMBFJ309 MMBFJ309LT1 MMBFJ310

    motorola U310

    Abstract: shock vk200 VK200 rfc MVM010 transistor u310 motorola 539 U310 MVM010W motorola 2443 vk200 rfc with 6 turns
    Text: MOTOROLA Order this document by MMBFJ309LT1/D SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifier Transistor N–Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage


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    PDF MMBFJ309LT1/D MMBFJ309LT1 MMBFJ310LT1 236AB) motorola U310 shock vk200 VK200 rfc MVM010 transistor u310 motorola 539 U310 MVM010W motorola 2443 vk200 rfc with 6 turns

    MMBF310

    Abstract: MMBF309 mmbfj310
    Text: MMBFJ309 / MMBFJ310 PRELIMINARY J-FET HIGH FREQUENCY AMPLIFIER TRANSISTOR 1 D N-CHANNEL 3 For VHF/UHF Applications G S 2 1 2 3 DEVICE MARKING MMBF309 = B9J; MMBF310 = B1J SOT-23 Note: Drain and Source are interchangeable. ELECTRICAL RATINGS Rating Symbol Value


    Original
    PDF MMBFJ309 MMBFJ310 MMBF309 MMBF310 OT-23 MMBF309 MMBF310

    Untitled

    Abstract: No abstract text available
    Text: J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features • • • • This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.


    Original
    PDF MMBFJ309 MMBFJ310 MMBFJ309 OT-23

    transistor y21 sot-23

    Abstract: MMBFJ310LT1G SMMBFJ310LT1G Y22 SOT23 S12 sot 23-6
    Text: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements


    Original
    PDF MMBFJ309L, MMBFJ310L, SMMBFJ310L AEC-Q101 OT-23 O-236) MMBFJ309LT1/D transistor y21 sot-23 MMBFJ310LT1G SMMBFJ310LT1G Y22 SOT23 S12 sot 23-6

    J310

    Abstract: j310 equivalent J310 applications J309 MMBFJ310 rf fairchild transistor 100mhz amplifier MMBFJ309 J310G N-CHANNEL dual gate ultra low noise vhf LOW NOISE AMPLIFIER J-310
    Text: J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features • • • • This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.


    Original
    PDF MMBFJ309 MMBFJ310 MMBFJ309 OT-23 J310 j310 equivalent J310 applications J309 MMBFJ310 rf fairchild transistor 100mhz amplifier J310G N-CHANNEL dual gate ultra low noise vhf LOW NOISE AMPLIFIER J-310

    Untitled

    Abstract: No abstract text available
    Text: MMBFJ309L, MMBFJ310L, MMBFJ309L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • Drain and Source are Interchangeable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements; AEC−Q101 Qualified and


    Original
    PDF MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L MMBFJ309LT1/D

    VK200 rfc

    Abstract: MMBFJ309 MMBFJ309LT1 MMBFJ310 MMBFJ310LT1 MVM010W U310 shock vk200 SOT23 TRANSISTOR MARKING c3 JFET with Yos
    Text: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N–Channel MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W


    Original
    PDF MMBFJ309LT1 MMBFJ310LT1 236AB) r14525 MMBFJ309LT1/D VK200 rfc MMBFJ309 MMBFJ309LT1 MMBFJ310 MMBFJ310LT1 MVM010W U310 shock vk200 SOT23 TRANSISTOR MARKING c3 JFET with Yos

    MMBFJ310

    Abstract: n-channel JFET sot23 MMBFJ309
    Text: MMBFJ309 / MMBFJ310 J-FET HIGH FREQUENCY AMPLIFIER TRANSISTOR 1 D N-CHANNEL 3 For VHF/UHF Applications G S 2 1 2 3 DEVICE MARKING MMBFJ309 = B9J; MMBFJ310 = B1J SOT-23 Note: Drain and Source are interchangeable. ELECTRICAL RATINGS Rating Symbol Value Units


    Original
    PDF MMBFJ309 MMBFJ310 MMBFJ309 OT-23 MMBFJ310 n-channel JFET sot23

    motorola JFET 2N3819

    Abstract: C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifier Transistor N–Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current


    Original
    PDF MMBFJ309LT1 MMBFJ310LT1 236AB) MMBFJ309LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 motorola JFET 2N3819 C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA

    6u sot-23

    Abstract: s22 sot-23 MMBFJ309 MMBFJ309LT1 MMBFJ310 MMBFJ310LT1 transistor y21 sot-23
    Text: ON Semiconductort JFET - VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N–Channel 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556


    Original
    PDF MMBFJ309LT1 MMBFJ310LT1 236AB) r14525 MMBFJ309LT1/D 6u sot-23 s22 sot-23 MMBFJ309 MMBFJ309LT1 MMBFJ310 MMBFJ310LT1 transistor y21 sot-23

    j310

    Abstract: J310 equivalent J309 J310 applications fr 309 J310 -TO92
    Text: J309 / J310 / MMBFJ309 / MMBFJ310 MMBFJ309 MMBFJ310 J309 J310 G G S S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and


    Original
    PDF MMBFJ309 MMBFJ310 OT-23 j310 J310 equivalent J309 J310 applications fr 309 J310 -TO92

    6u sot-23

    Abstract: j310 equivalent 1175 yig oscillator J309 application note rf transistor mark code H1 CBVK741B019 F63TNR J309 J310 MMBFJ309
    Text: J309 / J310 / MMBFJ309 / MMBFJ310 MMBFJ309 MMBFJ310 J309 J310 G S G S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and


    Original
    PDF MMBFJ309 MMBFJ310 MMBFJ309 OT-23 6u sot-23 j310 equivalent 1175 yig oscillator J309 application note rf transistor mark code H1 CBVK741B019 F63TNR J309 J310

    6u sot-23

    Abstract: JFET with Yos s22 sot-23
    Text: ON Semiconductort JFET - VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N−Channel 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current 2 CASE 318 −08, STYLE 10 SOT−23 TO −236AB


    Original
    PDF MMBFJ309LT1 MMBFJ310LT1 236AB) MMBFJ309LT1 6u sot-23 JFET with Yos s22 sot-23

    Untitled

    Abstract: No abstract text available
    Text: MMBFJ309 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150 I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


    Original
    PDF MMBFJ309

    CL-21 capacitor

    Abstract: BFJ309LT1 4505 IC equivalent BFJ310LT1 vk200 choke Cl-21 225
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA J F E T VHF/UHF Am plifier Transistor MMBFJ309LT1 MMBFJ310LT1 N -C h a n n e l 2 SOURCE MAXIMUM RATINGS Rating D rain-Source Voltage G ate-S ource Voltage Gate Current Symbol Value Unit V DS 25 Vdc VG S 25 Vdc !g 10 mAdc


    OCR Scan
    PDF MMBFJ309LT1 MMBFJ310LT1 O-236AB) BFJ309LT1 BFJ310LT1 CL-21 capacitor BFJ309LT1 4505 IC equivalent BFJ310LT1 vk200 choke Cl-21 225

    rde 090

    Abstract: BFJ309LT1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF A m plifier Transistor N-Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE GATE 1 DR AIN MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc ta 10 mAdc Symbol Max Unit


    OCR Scan
    PDF MMBFJ309LT1 MMBFJ310LT1 rde 090 BFJ309LT1

    MBFJ310

    Abstract: No abstract text available
    Text: MMBFJ309LT1* MMBFJ310LT1* M A X IM U M R A T IN G S Rating CASE 318-07, STYLE 10 SOT-23 TO-236AB S ym bol Value U n it D rain-Source Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc 'G 10 m Adc Sym bol M ax U n it PD 225 mW 1.8 m W °C R«j a 556 3C W


    OCR Scan
    PDF MMBFJ309LT1* MMBFJ310LT1* MMBFJ309LT1 MMBFJ310LT1 OT-23 O-236AB) OT-23 MBFJ309 MBFJ310

    j310

    Abstract: J310 equivalent z60b J309 4dcm J309-J310 J309 application note MMBFJ309 MMBFJ310
    Text: r D is c r e te P O W E R & S i g n a l ^ . T e c h n o lo g ie s , , S e m i c o n d u c t o r “ & J309 J310 MMBFJ309 MMBFJ310 N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and


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    PDF MMBFJ309 MMBFJ310 040ciS2 j310 J310 equivalent z60b J309 4dcm J309-J310 J309 application note MMBFJ310