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    MMBT5401L Price and Stock

    onsemi MMBT5401LT3G

    TRANS PNP 150V 0.5A SOT23-3
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    DigiKey MMBT5401LT3G Digi-Reel 62,107 1
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    onsemi SMMBT5401LT1G

    TRANS PNP 150V 0.5A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMMBT5401LT1G Cut Tape 38,525 1
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    SMMBT5401LT1G Digi-Reel 38,525 1
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    SMMBT5401LT1G 835 17
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    Rochester Electronics SMMBT5401LT1G 255,000 1
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    onsemi MMBT5401LT1G

    TRANS PNP 150V 0.5A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBT5401LT1G Cut Tape 31,197 1
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    MMBT5401LT1G Digi-Reel 31,197 1
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    MMBT5401LT1G Reel 30,000 3,000
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    MMBT5401LT1G Ammo Pack 25 Weeks, 4 Days 1
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    Mouser Electronics MMBT5401LT1G 98,891
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    onsemi NSVMMBT5401LT3G

    TRANS PNP 150V 0.5A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NSVMMBT5401LT3G Digi-Reel 16,734 1
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    onsemi MMBT5401LT3

    TRANS PNP 150V 0.5A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBT5401LT3 Reel 20,000
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    MMBT5401L Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBT5401L On Semiconductor Small Signal High Voltage Original PDF
    MMBT5401L-AE3-R Unisonic Technologies HIGH VOLTAGE SWITCHING TRANSISTOR Original PDF
    MMBT5401LT1 Avic Electronics SOT-23 Plastic-Encapsulate Transistors Original PDF
    MMBT5401LT1 Leshan Radio Company High Voltage Transistor(PNP Silicon) Original PDF
    MMBT5401LT1 Motorola Silicon PNP Transistor Original PDF
    MMBT5401LT1 On Semiconductor High Voltage Transistor Original PDF
    MMBT5401LT1 On Semiconductor Small Signal High Voltage-PNP; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBT5401LT1 On Semiconductor High Voltage Transistor Original PDF
    MMBT5401LT1 On Semiconductor Small Signal High Voltage Original PDF
    MMBT5401LT1 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Bipolar, PNP, High Voltage, 150V (BR), 50mA, Pkg Style SOT23 Scan PDF
    MMBT5401LT1/D On Semiconductor Motorola Preferred Device Original PDF
    MMBT5401LT1-D On Semiconductor High Voltage Transistor PNP Silicon Original PDF
    MMBT5401LT1G On Semiconductor High Voltage Transistor(PNP Silicon) Original PDF
    MMBT5401LT1G On Semiconductor Small Signal High Voltage-PNP; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBT5401LT3 On Semiconductor Small Signal High Voltage Original PDF
    MMBT5401LT3G On Semiconductor High Voltage Transistor(PNP Silicon) Original PDF
    MMBT5401LT3G On Semiconductor Small Signal High Voltage-PNP; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 Original PDF

    MMBT5401L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort High Voltage Transistor MMBT5401LT1 PNP Silicon ON Semiconductor Preferred Device 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –150 Vdc Collector–Base Voltage VCBO –160 Vdc Emitter–Base Voltage VEBO


    Original
    MMBT5401LT1 236AF) PDF

    1N914

    Abstract: MMBT5401LT1G MMBT5401LT3G
    Text: MMBT5401LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage


    Original
    MMBT5401LT1G MMBT5401LT1/D 1N914 MMBT5401LT1G MMBT5401LT3G PDF

    Untitled

    Abstract: No abstract text available
    Text: RECTRON SEMICONDUCTOR MMBT5401LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 160 V * Operating and storage junction temperature range


    Original
    MMBT5401LT1 OT-23 -55OC 150OC OT-23 MIL-STD-202E PDF

    1N914

    Abstract: MMBT5401LT1
    Text: ON Semiconductort High Voltage Transistor MMBT5401LT1 PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –150 Vdc Collector–Base Voltage VCBO –160 Vdc Emitter–Base Voltage VEBO –5.0


    Original
    MMBT5401LT1 r14525 MMBT5401LT1/D 1N914 MMBT5401LT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Transistor PNP Silicon MMBT5401LT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO Collector–Base Voltage Emitter–Base Voltage V CBO


    Original
    MMBT5401LT1 236AB) PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain „ ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MMBT5401L-x-AE3-R MMBT5401G-x-AE3-R


    Original
    MMBT5401 -150V MMBT5401L-x-AE3-R MMBT5401G-x-AE3-R OT-23 QW-R206-011 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401LT1 SOT-23 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR - W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.6 A ICM: Collector-base voltage


    Original
    OT-23 MMBT5401LT1 OT-23 -120V, -10mA -50mA -50mA, MMBT5401LT1 PDF

    0430330

    Abstract: MMBT5401LT1 0430330024
    Text: MMBT5401LT1 PNP Silicon Epitaxial Planar Transistor for high voltage . SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Collector Base Voltage -VCBO 160 Vdc Collector Emitter Voltage -VCEO 150 Vdc Emitter Base Voltage -VEBO 5


    Original
    MMBT5401LT1 OT-23 10mAdc, 50mAdc, 10Vdc, 100MHz 0430330 MMBT5401LT1 0430330024 PDF

    in995

    Abstract: MMBT5401LT1
    Text: MMBT5401LT1 PNP Silicon Epitaxial Planar Transistor for high voltage . SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Collector Base Voltage -VCBO 160 Vdc Collector Emitter Voltage -VCEO 150 Vdc Emitter Base Voltage -VEBO 5


    Original
    MMBT5401LT1 OT-23 417fT 10mAdc, 50mAdc, 10Vdc, 100MHz in995 MMBT5401LT1 PDF

    MMBT5401LT1G

    Abstract: 1N914 MMBT5401LT3G
    Text: MMBT5401LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage


    Original
    MMBT5401LT1G MMBT5401LT1/D MMBT5401LT1G 1N914 MMBT5401LT3G PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT5401LT1G, MMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236


    Original
    MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G AEC-Q101 OT-23 O-236) MMBT5401LT1/D PDF

    MMBT5401LT1

    Abstract: 2L SOT23
    Text: MMBT5401LT1 TRANSISTOR PNP SOT-23 Plastic-Encapsulate Transistors SOT-23 Features 3 Power dissipation O P C M : 0.3 W (Tamb=25 C) 1 Collector current 2 I CM : -0.6A 1. 1.BASE 2.EMITTER 3.COLLECTOR Collector-base Voltage 2.4 1.3 O 0.95 T j , T stg : -55 C to +150 C


    Original
    MMBT5401LT1 OT-23 OT-23 -160V 100mA 150mA 500mA 2L SOT23 PDF

    MMBT5401

    Abstract: MMBT5401L mmbt5401-g IC ax 2008
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain Lead-free: MMBT5401L Halogen-free: MMBT5401G „ ORDERING INFORMATION Normal MMBT5401-x-AE3-R


    Original
    MMBT5401 -150V MMBT5401L MMBT5401G MMBT5401-x-AE3-R MMBT5401L-x-AE3-R MMBT5401G-x-AE3-R OT-23 QW-R206-011 MMBT5401 MMBT5401L mmbt5401-g IC ax 2008 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT5401LT1 1. BASE TRANSISTOR( PNP ) 2. EMITTER 3. COLLECTOR FEATURES 1.0 Power dissipation PCM : 0.3 W(Tamb=25℃) Collector current ICM : -0.6


    Original
    OT-23 MMBT5401LT1 -10mA 30MHz 037TPY 950TPY 550REF 022REF PDF

    MMBT5401LT1

    Abstract: No abstract text available
    Text: MMBT5401LT1 TRANSISTOR PNP SOT-23 Plastic-Encapsulate Transistors SOT-23 Features 3 Power dissipation O P C M : 0.3 W (Tamb=25 C) 1 Collector current 2 I CM : -0.6A 1. 1.BASE 2.EMITTER 3.COLLECTOR Collector-base Voltage 2.4 1.3 O 0.95 T j , T stg : -55 C to +150 C


    Original
    MMBT5401LT1 OT-23 OT-23 -160V 100mA 150mA 500mA PDF

    MMBT5401LT1G

    Abstract: 1N914 MMBT5401LT1 MMBT5401LT3 MMBT5401LT3G sot-23-3 marking code PO
    Text: MMBT5401LT1 Preferred Device High Voltage Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc


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    MMBT5401LT1 MMBT5401LT1/D MMBT5401LT1G 1N914 MMBT5401LT1 MMBT5401LT3 MMBT5401LT3G sot-23-3 marking code PO PDF

    1N914 SOT-23

    Abstract: 1N914 MMBT5401LT1
    Text: ON Semiconductort High Voltage Transistor MMBT5401LT1 PNP Silicon ON Semiconductor Preferred Device 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –150 Vdc Collector–Base Voltage VCBO –160 Vdc Emitter–Base Voltage VEBO


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    MMBT5401LT1 236AF) r14525 MMBT5401LT1/D 1N914 SOT-23 1N914 MMBT5401LT1 PDF

    MA12 transistor

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ MMBT5401LT1 THRU High MOUNT Voltage Transistor FM1200-M+ 1.0A SURFACE SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


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    FM120-M+ MMBT5401LTHRU FM1200-M+ OD-123+ OD-123H FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH MA12 transistor PDF

    MMBT5401

    Abstract: MMBT5401L
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain Lead-free: MMBT5401L Halogen-free: MMBT5401G „ ORDERING INFORMATION Normal MMBT5401-x-AE3-R


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    MMBT5401 -150V MMBT5401L MMBT5401G MMBT5401-x-AE3-R MMBT5401L-x-AE3-R MMBT5401G-x-AE3-R OT-23 QW-R206-011 MMBT5401 MMBT5401L PDF

    1N914 SOT-23

    Abstract: 2L SOT-23 marking 8b sot-23 1n914 sot 1N914 MMBT5401LT1
    Text: MOTOROLA Order this document by MMBT5401LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT5401LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO


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    MMBT5401LT1/D MMBT5401LT1 MMBT5401LT1/D* 1N914 SOT-23 2L SOT-23 marking 8b sot-23 1n914 sot 1N914 MMBT5401LT1 PDF

    MMBT5401LT1G

    Abstract: 1N914 MMBT5401LT3G
    Text: MMBT5401LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage


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    MMBT5401LT1G MMBT5401LT1/D MMBT5401LT1G 1N914 MMBT5401LT3G PDF

    SMMBT5401LT1G

    Abstract: MMBT5401LT1G
    Text: MMBT5401LT1G, MMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236


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    MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G AEC-Q101 OT-23 O-236) MMBT5401LT1/D SMMBT5401LT1G MMBT5401LT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: SyrnSEMi SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR SOT — 23 1. BASE MMBT5401LT1 TRANSISTOR PNP 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 03 W (Tamb=25 °C) Collector current Icm : “ 0.6 Collector base voltage V ( b r )cbo


    OCR Scan
    MMBT5401LT1 30MHz OT-23 950TPY 037TPY 550REF 022REF PDF

    Untitled

    Abstract: No abstract text available
    Text: MAXIMUM RATINGS R atin g Sym bol V alu e C o lle cto r-E m itte r Voltage VCEO -1 5 0 Unit Vdc C ollector-Base Voltage VCBO - 160 Vdc Em itter-Base Voltage Ve b o MMBT5401LT1* - 5.0 Vdc - 500 m Adc Symbol Max U n it Pd 225 mW 1.8 m w rc R»j a 556 °C/W pd


    OCR Scan
    MMBT5401LT1* OT-23 O-236AB) PDF